Iinkqubo zokuVelisa iiPowders zeSiC ezikwiMgangatho oPhezulu

I-silicon carbide (SiC)Yikhompawundi engaphiliyo eyaziwa ngeempawu zayo ezikhethekileyo. I-SiC eyenzeka ngokwemvelo, eyaziwa ngokuba yi-moissanite, inqabile. Kwizicelo zamashishini,i-silicon carbideiveliswa ikakhulu ngeendlela zokwenziwa.
Kwi-Semicera Semiconductor, sixhasa ubuchule obuphambili bokwenzaUmgubo weSiC womgangatho ophezulu.

Iindlela zethu ziquka:
Indlela ye-Acheson:Le nkqubo yokunciphisa i-carbothermal yendabuko ibandakanya ukuxuba isanti ye-quartz ecocekileyo okanye i-quartz ore etyumkileyo kunye ne-petroleum coke, igraphite, okanye i-anthracite powder. Lo mxube ufudunyezwe kumaqondo obushushu angaphezu kwe-2000 ° C usebenzisa i-electrode yegraphite, okubangela ukuhlanganiswa kwe-α-SiC powder.
Ukunciphisa ubushushu beCarbothermal:Ngokudibanisa i-silica powder powder kunye ne-carbon powder kunye nokuqhuba ukusabela kwi-1500 ukuya kwi-1800 ° C, sivelisa i-β-SiC powder kunye nococeko oluphuculweyo. Le ndlela, efana nendlela ye-Acheson kodwa kwiqondo lokushisa eliphantsi, ivelisa i-β-SiC kunye nesakhiwo se-crystal esahlukileyo. Nangona kunjalo, i-post-processing ukususa i-carbon dioxide eseleyo kunye ne-silicon dioxide iyimfuneko.
I-Silicon-Carbon Direct Reaction:Le ndlela ibandakanya ukusabela ngokuthe ngqo kwi-silicon powder yensimbi kunye ne-carbon powder kwi-1000-1400 ° C ukuvelisa i-high-purity β-SiC powder. I-α-SiC powder ihlala ingundoqo ekrwada ye-silicon carbide ceramics, ngelixa i-β-SiC, kunye nesakhiwo sayo esifana nedayimane, ilungele ukuchaneka ngokuchanekileyo ukugaya kunye nokupolisha izicelo.
I-silicon carbide ibonisa iifom ezimbini eziphambili zekristale:α kunye no-β. I-β-SiC, kunye nenkqubo yayo ye-cubic crystal, ibonisa i-cubic lattice ejongene nobuso kuzo zombini i-silicon kunye nekhabhoni. Ngokwahlukileyo, i-α-SiC ibandakanya iipolytypes ezahlukeneyo ezifana ne-4H, i-15R, kunye ne-6H, kunye ne-6H eyona nto isetyenziswa kakhulu kwishishini. Ubushushu buchaphazela ukuzinza kwezi polytypes: i-β-SiC izinzile ngaphantsi kwe-1600 ° C, kodwa ngaphezu kolu bushushu, ngokuthe ngcembe iguqukela kwi-polytypes ye-α-SiC. Ngokomzekelo, iifom ze-4H-SiC malunga ne-2000 ° C, ngelixa i-15R kunye ne-6H i-polytypes ifuna amaqondo okushisa angaphezu kwe-2100 ° C. Ngokucacileyo, i-6H-SiC ihlala izinzile nakumaqondo obushushu angaphezu kwe-2200 ° C.

KwiSemicera Semiconductor, sizinikele ekuqhubeleni phambili itekhnoloji yeSiC. Ubungcali bethu kwiUkwaleka kweSiCkunye nezixhobo ziqinisekisa umgangatho ophezulu kunye nokusebenza kwezicelo zakho ze-semiconductor. Phonononga ukuba izisombululo zethu ze-cutting-edge zinokuphucula njani iinkqubo zakho kunye neemveliso.