Okwangoku, iindlela zokulungiselela zeUkwaleka kweSiCikakhulu zibandakanya indlela yejeli-sol, indlela yokufakela, indlela yokugquma ibrashi, indlela yokutshiza iplasma, indlela yokusabela umphunga wekhemikhali (CVR) kunye nendlela yokubeka umphunga wekhemikhali (CVD).
Indlela yokufakela
Le ndlela luhlobo lobushushu obuphezulu bobushushu obuqinileyo, obusebenzisa ubukhulu becala iSi powder kunye nomgubo weC njengomgubo wokufakela, ibekaigraphite matrixkwi-powder embedding, kunye ne-sinters kwiqondo lokushisa eliphezulu kwi-inert gas, kwaye ekugqibeleni ifunyenweUkwaleka kweSiCkumphezulu wegraphite matrix. Le ndlela ilula kwinkqubo, kwaye i-coating kunye ne-matrix ziboshwe kakuhle, kodwa ukufana kwe-coating ecaleni kwendlela yobunzima kubi, kwaye kulula ukuvelisa imingxuma emininzi, ekhokelela ekuxhathiseni i-oxidation embi.
Indlela yokwaleka ibrashi
Indlela yokwaleka ibrashi ikakhulu ibhrashi ulwelo imathiriyeli ekrwada kumphezulu grafiti matrix, kwaye emva koko kuqinisa imathiriyeli ekrwada kubushushu obuthile ukulungiselela ukutyabeka. Le ndlela ilula kwinkqubo kwaye iphantsi kweendleko, kodwa i-coating elungiselelwe yindlela yokugqoka ibrashi inebhondi ebuthathaka kunye ne-matrix, ukufana okungahambi kakuhle kwe-coating, i-coating encinci kunye nokumelana ne-oxidation ephantsi, kwaye ifuna ezinye iindlela zokuncedisa.
Indlela yokutshiza ngeplasma
Indlela yokutshiza ngePlasma ikakhulu isebenzisa umpu weplasma ukutshiza imathiriyeli enyibilikisiweyo okanye enyibilikisiweyo ekrwada kumphezulu we-graphite substrate, emva koko iqiniswe kunye neebhondi ukwenza isambatho. Le ndlela ilula ukusebenza kwaye inokulungiselela ukuxinanai-silicon carbide yokugquma, kodwai-silicon carbide yokugqumaelungiselelwe yile ndlela idla ngokuba buthathaka kakhulu ukuba ibe nokumelana ne-oxidation eyomeleleyo, ngoko ke isetyenziswa ngokubanzi ukulungiselela i-SiC yokwaleka ehlanganisiweyo ukuphucula umgangatho wokwaleka.
Indlela ye-gel-sol
Indlela ye-gel-sol ikakhulu ilungiselela isisombululo esifanayo kunye ne-sol evulekileyo yokugubungela umphezulu we-substrate, iyomisa ibe yijeli, kwaye emva koko i-sinters ukufumana i-coating. Le ndlela ilula ukuyisebenzisa kwaye ineendleko eziphantsi, kodwa i-coating elungiselelwe inezinto ezingathandekiyo ezifana nokuchasana kwe-thermal shock kunye nokuqhekeka okulula, kwaye ayikwazi ukusetyenziswa ngokubanzi.
Indlela yokusabela komphunga kwikhemikhali (CVR)
I-CVR ivelisa ikakhulu umphunga we-SiO ngokusebenzisa i-Si kunye ne-SiO2 powder kwiqondo lokushisa eliphezulu, kwaye uchungechunge lweekhemikhali zenzeke kumphezulu we-substrate ye-C ukuvelisa i-SiC coating. I-coating ye-SiC elungiselelwe yile ndlela iboshwe ngokuqinileyo kwi-substrate, kodwa ubushushu bokusabela buphezulu kwaye ixabiso liphezulu.
Ixesha lokuposa: Jun-24-2024