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Inkqubo yokuLungisa iCrystal yeMbewu kwiSiC yokuKhula kweCrystal enye (Icandelo 2)
2. Inkqubo yoMfuniselo 2.1 Ukunyangwa kweFilimu encamathelayo Kwaphawulwa ukuba ukwenza ngokuthe ngqo ifilimu yekhabhoni okanye ukudibanisa ngephepha legraphite kwiiwafers ze-SiC ezigqunywe nge-adhesive kwakhokelela kwimiba emininzi: 1. Ngaphantsi kweemeko ze-vacuum, ifilimu yokuncamathela kwii-wafers ze-SiC zenza ukubonakala kwe-scalelike ngenxa. ukusayina...Funda ngokugqithisileyo -
Inkqubo yokuLungisa iCrystal yeMbewu kwiSiC yokuKhula kweCrystal enye
Izinto zeSilicon carbide (SiC) zineengenelo zebhendi ebanzi, ukuhanjiswa kwe-thermal ephezulu, ukomelela okuphezulu kwebala lokuqhekeka, kunye nesantya esiphezulu se-electron drift drift, esenza ukuba sithembise kakhulu kwindawo yokwenziwa kwe-semiconductor. Iikristale ze-SiC enye ziveliswa ngokubanzi ...Funda ngokugqithisileyo -
Zeziphi iindlela zokupholisha iwafer?
Kuzo zonke iinkqubo ezibandakanyekayo ekudaleni i-chip, ikamva lokugqibela le-wafer liza kunqunyulwa libe lifa lomntu kwaye lipakishwe kwiibhokisi ezincinci, ezivaliweyo kunye nezikhonkwane ezimbalwa eziveziweyo. I-chip iya kuvavanywa ngokusekwe kumda wayo, ukumelana, okwangoku, kunye namaxabiso ombane, kodwa akukho mntu uya kuthathela ingqalelo ...Funda ngokugqithisileyo -
Intshayelelo eyiSiseko yeSiC Epitaxial yokuKhula kweNkqubo
I-Epitaxial layer yifilimu ethile ye-crystal eyodwa ekhulile kwi-wafer nge-ep·itaxial process, kunye ne-substrate wafer kunye nefilimu ye-epitaxial ibizwa ngokuba yi-epitaxial wafer. Ngokukhulisa i-silicon carbide epitaxial layer kwi-conductive silicon carbide substrate, i-silicon carbide homogeneous epitaxial...Funda ngokugqithisileyo -
Amanqaku aphambili olawulo lwenkqubo yokupakishwa kwe-semiconductor
Amanqaku aphambili oLawulo loMgangatho kwiNkqubo yokuPakisha iSemiconductorOkwangoku, iteknoloji yenkqubo yokupakishwa kwe-semiconductor iye yaphucuka kakhulu kwaye yalungiswa. Nangona kunjalo, ngokwembono epheleleyo, iinkqubo kunye neendlela zokupakishwa kwe-semiconductor azikafiki kweyona nto igqibeleleyo ...Funda ngokugqithisileyo -
Imingeni kwiNkqubo yokuPakisha iSemiconductor
Ubuchwephesha bangoku bokupakishwa kwe-semiconductor buphucula ngokuthe ngcembe, kodwa ubungakanani bezixhobo ezizenzekelayo kunye nobuchwepheshe bamkelwe kwi-package ye-semiconductor ngokuthe ngqo kuqinisekisa ukufezekiswa kweziphumo ezilindelekileyo. Iinkqubo ezikhoyo zokupakisha ze-semiconductor zisachaphazeleka ...Funda ngokugqithisileyo -
Uphando kunye noHlalutyo lweNkqubo yokuPakisha iSemiconductor
Isishwankathelo seNkqubo yeSemiconductorInkqubo ye-semiconductor ngokuyintloko ibandakanya ukusebenzisa i-microfabrication kunye nobuchwepheshe befilimu ukudibanisa ngokupheleleyo iichips kunye nezinye izinto ngaphakathi kwemimandla eyahlukeneyo, efana ne-substrates kunye nezakhelo. Oku kunceda ukutsalwa kweetheminali ezikhokelayo kunye nokufakwa kwe-encapsulation nge...Funda ngokugqithisileyo -
IiNdlela eziNtsha kuShishino lweSemiconductor: Ukusetyenziswa kweTekhnoloji yoKhuseleko lweTekhnoloji
Ishishini le-semiconductor libona ukukhula okungazange kubonwe ngaphambili, ngakumbi kwindawo ye-silicon carbide (SiC) yamandla ombane. Ngeempahla ezininzi ze-wafer ezinkulu ezisakhiwayo okanye ukwandiswa ukuhlangabezana nemfuno ekhulayo yezixhobo ze-SiC kwizithuthi zombane, oku ...Funda ngokugqithisileyo -
Ngawaphi amanyathelo aphambili ekusetyenzweni kweesubstrates zeSiC?
Indlela esivelisa ngayo amanyathelo okucubungula i-SiC substrates zilandelayo: 1. I-Crystal Orientation: Ukusebenzisa i-X-ray diffraction ukuqhelanisa i-crystal ingot. Xa umqadi weX-reyi ujongiswe kubuso obunqwenelekayo bekristale, i-engile yomqadi ophazanyisiweyo imisela ukujongwa kwekristale...Funda ngokugqithisileyo -
Isixhobo esibalulekileyo esimisela umgangatho wokukhula kwe-silicon eyodwa ye-crystal - intsimi ye-thermal
Inkqubo yokukhula ye-crystal silicon enye iqhutywe ngokupheleleyo kwintsimi ye-thermal. Intsimi efanelekileyo ye-thermal inceda ekuphuculeni umgangatho wekristale kwaye inokusebenza kakuhle kwe-crystallization. Uyilo lwentsimi ye-thermal lumisela ubukhulu becala utshintsho kunye neenguqu ...Funda ngokugqithisileyo -
Yintoni ukukhula kwe-epitaxial?
Ukukhula kwe-Epitaxial iteknoloji ekhulisa i-crystal layer eyodwa kwi-crystal substrate (i-substrate) kunye ne-crystal orientation efana ne-substrate, njengokungathi i-crystal yasekuqaleni iye yanda ngaphandle. Lo maleko wekristale osanda kukhula unokwahluka kwi-substrate ngokwemigaqo ye ...Funda ngokugqithisileyo -
Uthini umahluko phakathi kwe-substrate kunye ne-epitaxy?
Kwinkqubo yokulungiselela i-wafer, kukho izixhumanisi ezimbini eziphambili: enye ilungiselelo le-substrate, kwaye enye kukuphunyezwa kwenkqubo ye-epitaxial. I-substrate, i-wafer eyilwe ngononophelo ukusuka kwi-semiconductor enye imathiriyeli yekristale, inokufakwa ngokuthe ngqo kwimveliso ye-wafer ...Funda ngokugqithisileyo