IiNdlela eziNtsha kuShishino lweSemiconductor: Ukusetyenziswa kweTekhnoloji yoKhuseleko lweTekhnoloji

Ishishini le-semiconductor libona ukukhula okungazange kubonwe ngaphambili, ngakumbi kwindawo yei-silicon carbide (SiC)amandla e-elektroniki. Ngeemali ezininzi ezinkuluiqhekezana lesonkaamalaphu enziwa ulwakhiwo okanye ukwandiswa ukuhlangabezana nemfuno enyukayo yezixhobo ze-SiC kwizithuthi zombane, le boom inika amathuba amangalisayo okukhula kwengeniso. Nangona kunjalo, ikwavelisa imingeni ekhethekileyo efuna izisombululo ezintsha.

Embindini wokonyuka kwemveliso yetshiphu yeSiC yehlabathi kukwenziwa kweekristale zeSiC ezikumgangatho ophezulu, iiwafers, kunye neeleya ze-epitaxial. Apha,igraphite ye-semiconductor-gradeizixhobo zidlala indima ebalulekileyo, iququzelela ukukhula kwekristale ye-SiC kunye nokubekwa kwe-SiC epitaxial layers. I-Graphite ye-thermal insulation kunye ne-inertness yenza kube yinto ekhethwayo, esetyenziswa kakhulu kwi-crucibles, i-pedestals, iidiski zeplanethi, kunye neesathelayithi ngaphakathi kokukhula kwekristale kunye neenkqubo ze-epitaxy. Nangona kunjalo, iimeko ezinzima zenkqubo zenza umngeni omkhulu, okhokelela ekuthotyweni ngokukhawuleza kwamacandelo e-graphite kwaye emva koko kuthintele ukuveliswa kweekristale ze-SiC ezikumgangatho ophezulu kunye ne-epitaxial layers.

Ukuveliswa kweekristale ze-silicon carbide kubandakanya iimeko zenkqubo enzima kakhulu, kubandakanywa amaqondo okushisa angaphezu kwe-2000 ° C kunye nezinto zerhasi ezonakalisa kakhulu. Oku kudla ngokukhokelela ekudlekeni okupheleleyo kweecrucible zegraphite emva kwemijikelo yenkqubo emininzi, ngaloo ndlela kunyuka iindleko zemveliso. Ukongezelela, iimeko ezinzima ziguqula iipropati zomphezulu wamacandelo e-graphite, ukuphazamisa ukuphindaphinda kunye nokuzinza kwenkqubo yokuvelisa.

Ukulwa nale mingeni ngokufanelekileyo, itekhnoloji yokugquma ekhuselayo iye yavela njengenguqu yomdlalo. Iingubo ezikhuselayo ezisekelwe kwitantalum carbide (TaC)ziye zaziswa ukujongana nemiba yokuthotywa kwecandelo legraphite kunye nokunqongophala kobonelelo ngeegraphite. Iimathiriyeli ze-TaC zibonisa ubushushu obunyibilikayo obungaphezulu kwe-3800°C kunye nokumelana neekhemikhali ezikhethekileyo. Ukusebenzisa itekhnoloji yokubeka umphunga kwikhemikhali (CVD),Iingubo ze-TaCenobunzima obufikelela kwi-35 millimeters inokufakwa ngokungenamthungo kumalungu egraphite. Lo maleko okhuselayo awugcini nje ukwandisa uzinzo lwezinto eziphathekayo kodwa ukwandisa kakhulu ixesha lokuphila lamacandelo egraphite, ngenxa yoko ukunciphisa iindleko zemveliso kunye nokuphucula ukusebenza kakuhle.

Semicera, umboneleli okhokelayo weIingubo ze-TaC, ibe negalelo ekuguquleni ishishini le-semiconductor. Ngetekhnoloji yayo yokusika kunye nokuzinikela okungagungqiyo kumgangatho, iSemicera yenze ukuba abavelisi be-semiconductor banqobe imingeni ebalulekileyo kwaye bafezekise impumelelo emitsha. Ngokunikezela ngeengubo ze-TaC ngokusebenza okungenakuthelekiswa nanto kunye nokuthembeka, iSemicera iye yaqinisa indawo yayo njengeqabane elithembekileyo kwiinkampani zesemiconductor kwihlabathi jikelele.

Ukuqukumbela, itekhnoloji yokukhusela itekhnoloji, exhaswe yizinto ezintsha ezifanaIingubo ze-TaCukusuka kwi-Semicera, ilungisa ngokutsha i-semiconductor landscape kwaye ivula indlela yekamva elisebenzayo nelizinzileyo.