【 Inkcazo yesishwankathelo 】 Kule mihla C, N, B kunye nezinye non-oxide high-tech refractory imathiriyeli ekrwada, uxinzelelo lomoya sinteredi-silicon carbidelubanzi kwaye lunoqoqosho, kwaye kunokuthiwa yisanti ye-emery okanye i-refractory. Unyului-silicon carbideyikristale e transparent engenambala. Ngoko yintoni isakhiwo sezinto eziphathekayo kunye neempawui-silicon carbide?
Ubume bezinto eziphathekayo zoxinzelelo lwe-atmospheric sinteredi-silicon carbide:
Uxinzelelo lwe-atmospheric santeri-silicon carbideesetyenziswa kushishino ukukhanya tyheli, eluhlaza, blue and black ngokohlobo kunye nomxholo wokungcola, kwaye ubunyulu yahlukile kwaye elubala yahlukile. I-silicon carbide crystal structure yahlulwe ngamagama amathandathu okanye i-diamond emile i-plutonium kunye ne-cubic plutonium-sic. I-Plutonium-sic yenza iindidi ze-deformation ngenxa yomyalelo wokupakisha ohlukeneyo wekhabhoni kunye ne-athomu ye-silicon kwisakhiwo se-crystal, kwaye ngaphezu kwe-70 iintlobo ze-deformation zifunyenwe. I-beta-SIC iguqulela kwi-alpha-SIC ngaphezu kwe-2100. Inkqubo yoshishino ye-silicon carbide ihlanjululwe ngesanti ye-quartz ephezulu kunye ne-petroleum coke kwisithando somlilo. Iibhloko ze-silicon ecocekileyo ze-carbide zityunyuziwe, ukucocwa kwe-asidi-base, ukwahlukana kwamagnetic, ukuhlolwa okanye ukukhethwa kwamanzi ukuvelisa ubungakanani beemveliso ezahlukeneyo.
Iimpawu zezinto eziphathekayo zoxinzelelo lwe-atmospherici-silicon carbide edibeneyo:
I-Silicon carbide inozinzo oluhle lweekhemikhali, i-thermal conductivity, i-coefficient yokwandisa i-thermal, ukumelana nokunxiba, ngoko ke ngaphezu kokusetyenziswa kwe-abrasive, kukho izinto ezininzi ezisetyenziselwa: inkqubo ekhethekileyo, enokuphucula ukuxhatshazwa kokugqoka kunye nokwandisa ubomi be-1 ukuya kuma-2 amaxesha. Yenziwe ngokumelana nobushushu, ubungakanani obuncinci, ubunzima obulula, amandla aphezulu ezinto ezichasayo zomgangatho ophezulu, ukusebenza kakuhle kwamandla kuhle kakhulu. I-silicon carbide ye-low-grade (kubandakanywa malunga ne-85% ye-SiC) i-deoxidizer egqwesileyo yokunyusa isantya se-steelmaking kunye nokulawula ngokulula ukubunjwa kweekhemikhali ukuphucula umgangatho wensimbi. Ukongeza, uxinzelelo lwe-atmospheric sintered silicon carbide ikwasetyenziswa ngokubanzi ekwenzeni iindawo zombane zee-silicon carbon rod.
I-silicon carbide inzima kakhulu. Ubunzima beMorse yi-9.5, okwesibini kuphela kwidayimane enzima yehlabathi (10), i-semiconductor ene-conductivity egqwesileyo ye-thermal, inokumelana ne-oxidation kumaqondo aphezulu. I-silicon carbide ineentlobo ze-crystalline ubuncinane ze-70. I-Plutonium-silicon carbide i-isomer eqhelekileyo eyenza kumaqondo okushisa ngaphezu kwe-2000 kwaye inesakhiwo se-crystalline esinehexagonal (esifana ne-wurtzite). I-silicon carbide ye-Sintered phantsi koxinzelelo lwe-atmospheric
Ukusetyenziswa kwei-silicon carbidekwishishini le-semiconductor
I-silicon carbide semiconductor industry chain ikakhulu ibandakanya i-silicon carbide high-purity powder, i-crystal substrate enye, i-epitaxial sheet, izakhi zamandla, ukupakishwa kwemodyuli kunye nezicelo ze-terminal.
1. I-crystal substrate enye ye-crystal substrate yinto exhasayo ye-semiconductor, izinto eziphathekayo kunye ne-epitaxial yokukhula substrate. Okwangoku, iindlela zokukhula ze-crystal ye-SiC enye ziquka indlela yokudlulisa umphunga womzimba (indlela ye-PVT), indlela yesigaba solwelo (indlela ye-LPE), kunye neqondo eliphezulu lobushushu bekhemikhali yokubeka umphunga (indlela ye-HTCVD). I-silicon carbide ye-Sintered phantsi koxinzelelo lwe-atmospheric
2. Iphepha le-Epitaxial I-Silicon carbide epitaxial sheet, i-silicon carbide sheet, ifilimu ye-crystal eyodwa (i-epitaxial layer) kunye nolwalathiso olufanayo ne-substrate crystal eneemfuno ezithile ze-silicon carbide substrate. Kwizicelo ezisebenzayo, izixhobo ezibanzi ze-gap semiconductor ziphantse zonke zenziwe kwi-epitaxial layer, kwaye i-silicon chip ngokwayo isetyenziswa kuphela njenge-substrate, kubandakanywa ne-substrate ye-GaN epitaxial layer.
3. I-high-purity silicon carbide powder I-high-purity silicon carbide powder yinto ekrwada yokukhula kwe-silicon carbide ikristale enye nge-PVT indlela, kwaye ukucoceka kwemveliso kuchaphazela ngokuthe ngqo umgangatho wokukhula kunye neempawu zombane ze-silicon carbide ikristale enye.
4. Isixhobo samandla singumbane obanzi owenziwe nge-silicon carbide material, eneempawu zokushisa okuphezulu, ukuphindaphinda okuphezulu kunye nokusebenza okuphezulu. Ngokwendlela yokusebenza yesixhobo, isixhobo sombane weSiC sibandakanya ikakhulu i-diode yamandla kunye netyhubhu yokutshintsha amandla.
5. I-Terminal Kwizicelo ze-semiconductor zesizukulwana sesithathu, i-silicon carbide semiconductors inenzuzo yokuhambelana ne-gallium nitride semiconductors. Ngenxa yokusebenza okuphezulu kokuguqulwa, iimpawu eziphantsi zokufudumeza, ukukhanya kunye nezinye iingenelo zezixhobo ze-SiC, imfuno yoshishino olusezantsi luyaqhubeka nokukhula, kwaye kukho umkhwa wokutshintsha izixhobo ze-SiO2.
Ixesha lokuposa: Oct-16-2023