Ukuphonononga amandla aphezulu kunye neempawu zokuqina okuphezulu kweSilicon Carbide Wafer Boats

Izikhephe zeSilicon carbide (SiC).idlala indima ebalulekileyo kwishishini le-semiconductor, iququzelela ukuveliswa kwezixhobo zombane ezikumgangatho ophezulu. Eli nqaku lingena kwiimpawu eziphawulekayo zeIzikhephe zeSiC, egxile kumandla abo akhethekileyo kunye nobunzima, kwaye igxininisa ukubaluleka kwabo ekuxhaseni ukukhula kweshishini le-semiconductor.

UkuqondaIinqanawa zeSilicon Carbide Wafer:
Izikhephe zeSilicon carbide wafer, ezikwabizwa ngokuba ziinqanawa zeSiC, zizinto ezibalulekileyo ezisetyenziswa kwinkqubo yokwenziwa kweesemiconductors. Ezi zikhephe zisebenza njengabathwali be-silicon wafers ngexesha lamanqanaba ahlukeneyo emveliso ye-semiconductor, efana ne-etching, ukucoca, kunye nokusasazwa. Izikhephe ze-SiC wafer zikhethwa ngaphezu kwezikhephe zegraphite zemveli ngenxa yeempawu zazo eziphezulu.

Amandla angenakuthelekiswa nanto:
Enye yeempawu ezibalaseleyo zeIzikhephe zeSiCngamandla awo akhethekileyo. I-Silicon carbide iqhayisa amandla aphezulu okuguquguquka, okwenza iinqanawa zikwazi ukumelana neemeko ezifunekayo zeenkqubo zokuvelisa i-semiconductor. Izikhephe ze-SiC zinokunyamezela amaqondo obushushu aphezulu, uxinzelelo koomatshini, kunye neendawo ezinobungozi ngaphandle kokubeka esichengeni isidima sabo sesakhiwo. Oku komelela kuqinisekisa ukuthuthwa okukhuselekileyo kunye nokuphathwa kwee-wafers ze-silicon ezibuthathaka, ukunciphisa umngcipheko wokuqhekeka kunye nokungcoliseka ngexesha lemveliso.

Ukuqina okuchukumisayo:
Olunye uphawu oluphawulekayo lweIzikhephe zeSiCbubunzima babo obuphezulu. I-Silicon carbide inobulukhuni be-Mohs be-9.5, iyenza ibe yenye yezona zinto zinzima ezaziwa ngumntu. Obu bunzima bukhethekileyo bubonelela izikhephe ze-SiC ngokuxhathisa okugqwesileyo kokunxiba, kuthintela ukukrwela okanye ukonakaliswa kwee-wafers zesilicon eziziphetheyo. Ubunzima be-SiC bukwanegalelo kubomi obude bezikhephe, njengoko ziyakwazi ukumelana nokusetyenziswa ixesha elide ngaphandle kweempawu ezibalulekileyo zokuguga, ukuqinisekisa ukusebenza okungaguqukiyo kunye nokuthembeka kwiinkqubo zokwenziwa kwe-semiconductor.

Izinto eziluncedo ngaphezu kweeBoti zeGraphite:
Xa kuthelekiswa nezikhephe zegraphite zemveli,izikhephe ze-silicon carbide waferzibonelela ngeenzuzo ezininzi. Ngelixa izikhephe zegraphite zichaphazeleka kwi-oxidation kunye nokuwohloka kumaqondo obushushu aphezulu, iinqanawa ze-SiC zibonisa ukuchasana okuphezulu kokuthotywa kwe-thermal kunye ne-oxidation. Ngaphezu koko,Izikhephe zeSiCube ne-coefficient ephantsi yokwandiswa kwe-thermal kunezikhephe zegraphite, ukunciphisa umngcipheko woxinzelelo lwe-thermal kunye nokuguqulwa ngexesha lokutshintsha kweqondo lokushisa. Amandla aphezulu kunye nokuqina kweenqanawa ze-SiC nazo zibenza bangabi lula ukuphuka kunye nokunxiba, okukhokelela ekunciphiseni ixesha lokunciphisa kunye nokwandisa imveliso kwimveliso ye-semiconductor.

Isiphelo:
Izikhephe zeSilicon carbide wafer, kunye namandla azo ancomekayo kunye nobulukhuni, ziye zavela njengezinto eziyimfuneko kwishishini le-semiconductor. Ukukwazi kwabo ukumelana neemeko ezinzima, kunye nokunganyangeki kwabo okuphezulu, kuqinisekisa ukuphathwa ngokukhuselekileyo kwee-wafers ze-silicon ngexesha leenkqubo zokuvelisa. Izikhephe ze-SiC wafer ziyaqhubeka nokudlala indima ebalulekileyo ekuqhubeni ukukhula kunye nokutsha kweshishini le-semiconductor.