Okokuqala, faka i-silicon ye-polycrystalline kunye ne-dopants kwi-quartz crucible kwisithando somlilo se-crystal enye, phakamisa ubushushu ukuya kwii-degrees ezingaphezu kwe-1000, kwaye ufumane i-silicon ye-polycrystalline kwindawo etyhidiweyo.
Ukukhula kwe-Silicon ingot yinkqubo yokwenza isilicon ye-polycrystalline ibe yi-silicon enye yekristale. Emva kokuba i-silicon ye-polycrystalline ifudunyezwe ibe lulwelo, indawo ye-thermal ilawulwa ngokuchanekileyo ukuze ikhule ibe yikristale eyodwa ekumgangatho ophezulu.
Iingqiqo eziyeleleneyo:
Ukukhula kwekristale enye:Emva kokuba ubushushu besisombululo se-polycrystalline silicon zizinzile, ikristale yembewu ithotywa kancinane kwi-silicon inyibilika (ikristale yembewu iya kunyibilika kwi-silicon melt), emva koko ikristale yembewu iphakanyiselwe phezulu ngesantya esithile sokuhlwayela. inkqubo. Emva koko, i-dislocations eyenziwa ngexesha lenkqubo yokuhlwayela iyasuswa ngokusebenza kwentamo. Xa intamo iyancipha ukuya kubude obaneleyo, ububanzi be-silicon eyodwa ye-crystal yandiswa kwixabiso elijoliswe kuyo ngokulungelelanisa isantya sokutsala kunye nokushisa, kwaye ke ububanzi obulinganayo bugcinwa ukuze bukhule ukuya kubude obujoliswe kuyo. Okokugqibela, ukuze kuthintelwe ukushenxiswa ukuba kungabuyeli ngasemva, i-ingot ye-crystal enye igqityiwe ukufumana i-ingot ye-crystal egqityiweyo, kwaye ikhutshwe emva kokuba ubushushu bupholile.
Iindlela zokulungiselela i-silicon enye yekristale:Indlela ye-CZ kunye nendlela ye-FZ. Indlela ye-CZ ishunqulelwe njengendlela ye-CZ. Uphawu lwendlela ye-CZ kukuba ishwankathelwa kwi-thermal-cylinder system ye-thermal, isebenzisa ukufudumeza kwe-graphite ukunyibilikisa i-silicon ye-polycrystalline kwi-crucible quartz crucible ephezulu, kwaye ifake i-crystal yembewu kwindawo yokunyibilika ukuze idibanise, ngelixa ukujikeleza ikristale yembewu, kwaye emva koko uguqule i-crucible. Ikristale yembewu iphakanyiselwa phezulu kancinci, kwaye emva kweenkqubo zokuhlwayela, ukwandiswa, ukujikeleza kwamagxa, ukukhula okulinganayo kobubanzi, kunye nomsila, kufunyanwa i-silicon enye yekristale.
Indlela yokunyibilika kwendawo yindlela yokusebenzisa i-polycrystalline ingots ukuze inyibilike kwaye ifake iikristale ze-semiconductor kwiindawo ezahlukeneyo. Amandla e-thermal asetyenziselwa ukuvelisa indawo yokunyibilika kwelinye icala lentonga ye-semiconductor, kwaye ke ikristale enye ye-crystal imbewu idityanisiwe. Ubushushu buhlengahlengiswa ukwenza indawo yokunyibilika ihambe kancinci iye kwelinye icala lentonga, kwaye kuyo yonke intonga, ikristale enye iyakhuliswa, kwaye ukujongwa kwekristale kuyafana naleyo yekristale yembewu. Indlela yokunyibilika yendawo yohlulwe ibe ziindidi ezimbini: indlela yokunyibilikisa yendawo ethe tyaba kunye nendlela yokunyibilikisa yendawo ethe tye. Eyangaphambili isetyenziselwa ukuhlanjululwa kunye nokukhula kwekristale enye yezinto ezifana ne-germanium kunye ne-GaAs. Eyokugqibela kukusebenzisa ikhoyili yefrikhwensi ephezulu kwiatmosfera okanye kwiziko lokufunxa ukuvelisa indawo etyhidiweyo kunxibelelwano phakathi kwekristale yembewu yekristale kunye nentonga yesilicon exhonywe ngaphezulu kwayo, emva koko uhambise indawo etyhidiweyo phezulu ukuze ikhule enye. ikristale.
Malunga ne-85% yee-silicon wafers ziveliswa ngendlela ye-Czochralski, kwaye i-15% ye-silicon yafers iveliswa yindlela yokunyibilika kwendawo. Ngokwesicelo, i-silicon enye yekristale ekhuliswe yindlela yeCzochralski isetyenziswa ikakhulu ukuvelisa izinto ezidityanisiweyo zesekethe, ngelixa i-silicon enye yekristale ekhuliswe yindlela yokunyibilika kwendawo isetyenziswa ikakhulu kwi-semiconductors yamandla. Indlela yeCzochralski inenkqubo evuthiweyo kwaye kulula ukukhula i-silicon ye-crystal crystal enobubanzi obukhulu; Indlela yokunyibilika kwendawo ayidibanisi nesikhongozeli, akukho lula ukungcoliseka, inobunyulu obuphezulu, kwaye ilungele ukuveliswa kwezixhobo zombane ezinamandla aphezulu, kodwa kunzima kakhulu ukukhulisa i-silicon yekristale enobubanzi obukhulu. kwaye isetyenziswa ngokubanzi kuphela kwi-intshi ezi-8 okanye ngaphantsi ububanzi. Ividiyo ibonisa indlela yeCzochralski.
Ngenxa yobunzima bokulawula ububanzi bentonga ye-crystal ye-silicon enye kwinkqubo yokutsala ikristale enye, ukuze kufumaneke iintonga ze-silicon ezinobubanzi obuqhelekileyo, obufana ne-intshi ezi-6, i-intshi ezi-8, i-intshi ezili-12, njl. Emva kokutsala enye ikristale, ububanzi be-silicon ingot iya kuqengqeleka kwaye ibe phantsi. Umphezulu wentonga yesilicon emva kokuqengqeleka ugudile kwaye impazamo yesayizi incinci.
Ngokusebenzisa itekhnoloji yokusika itekhnoloji ephucukileyo, i-ingot enye yekristale isikwa kwii-silicon wafers ezinobunzima obufanelekileyo ngokusebenzisa izixhobo zokusika.
Ngenxa yobukhulu obuncinci be-silicon, i-wafer ye-silicon emva kokusikwa ibukhali kakhulu. Injongo yokusila edge kukwenza i-edge egudileyo kwaye akulula ukuyiqhekeza kwimveliso ye-chip yexesha elizayo.
I-LAPING kukongeza i-wafer phakathi kwepleyiti yokukhetha enzima kunye necwecwe elisezantsi lekristale, kwaye usebenzise uxinzelelo kunye nokujikeleza nge-abrasive ukwenza i-wafer flat.
I-Etching yinkqubo yokususa umonakalo ongaphezulu we-wafer, kwaye umaleko womphezulu owonakaliswe yinkqubo yomzimba uchithwa yisisombululo sekhemikhali.
Ukusila ngamacala amabini yinkqubo yokwenza i-wafer flat kwaye isuse ama-protrusions amancinci phezu komhlaba.
I-RTP yinkqubo yokufudumeza ngokukhawuleza i-wafer kwimizuzwana embalwa, ukwenzela ukuba iziphene zangaphakathi ze-wafer zifanane, ukungcola kwetsimbi kugxininiswe, kunye nokusebenza okungaqhelekanga kwe-semiconductor kuthintelwe.
Ukupholisha yinkqubo eqinisekisa ukugudiseka komphezulu ngomatshini ochanekileyo womphezulu. Ukusetyenziswa kwe-slurry epholishayo kunye nelaphu lokupholisha, kudityaniswa nobushushu obufanelekileyo, uxinzelelo kunye nesantya sokujikeleza, kunokuphelisa umaleko womonakalo oshiywe yinkqubo yangaphambili kwaye ufumane amaqhekeza e-silicon anomgangatho ogqwesileyo womphezulu.
Injongo yokucoca kukususa izinto eziphilayo, iinqununu, isinyithi, njl njl. esele phezu kwe-silicon wafer emva kokupholisa, ukwenzela ukuba kuqinisekiswe ukucoceka kwe-silicon wafer surface kunye nokuhlangabezana neemfuno zomgangatho wenkqubo elandelayo.
I-flatness & resistivity tester ibona i-wafer ye-silicon emva kokupolisha kunye nokucoca ukuqinisekisa ukuba ubukhulu, ukuvuleka, ukucaca kwendawo, i-curvature, i-warpage, i-resistivity, njl.
I-PARICLE COUNTING yinkqubo yokuhlola ngokuchanekileyo umphezulu we-wafer, kwaye iziphene zomhlaba kunye nobuninzi zichongwa ngokusasazwa kwe-laser.
UKUKHULA kwe-EPI yinkqubo yokukhulisa iifilimu ezikumgangatho ophezulu wesilicon enye yekristale kwiziphako zesilicon ezikhazimlisiweyo ngokubekwa kwekhemikhali yesigaba somphunga.
Iingqiqo eziyeleleneyo:Ukukhula kwe-Epitaxial: kubhekiselele ekukhuleni koluhlu olulodwa lwe-crystal kunye neemfuno ezithile kunye ne-crystal orientation efanayo njenge-substrate kwi-crystal substrate enye (i-substrate), njenge-crystal yasekuqaleni ephuma ngaphandle kwecandelo. Itekhnoloji yokukhula kwe-Epitaxial yaphuhliswa ngasekupheleni kweminyaka yee-1950 nakwiminyaka yokuqala yee-1960. Ngelo xesha, ukwenzela ukuvelisa izixhobo eziphezulu ze-frequency kunye ne-high-power, kwakuyimfuneko ukunciphisa ukuxhathisa uchungechunge lomqokeleli, kunye nezinto ezifunekayo ukumelana nombane ophezulu kunye nomgangatho ophezulu wangoku, ngoko ke kwafuneka ukuba ukhule umncinci ophezulu- ukumelana ne-epitaxial layer kwi-low-resistance substrate. Umaleko omtsha wekristale okhuliswe nge-epitaxially unokwahluka kwi-substrate ngokohlobo lwe-conductivity, resistivity, njl., kunye ne-multi-layer ye-crystals enye yeekristale ezahlukeneyo kunye neemfuno zinokukhuliswa, ngaloo ndlela kuphuculwe kakhulu ukuguquguquka koyilo lwesixhobo kunye ukusebenza kwesixhobo.
Ukupakishwa kukupakishwa kweemveliso eziqinisekisiweyo zokugqibela.
Ixesha lokuposa: Nov-05-2024