Yintoni iCVD SiC
I-Chemical vapor deposition (CVD) yinkqubo yokubeka ivacuum esetyenziselwa ukuvelisa izinto eziqinileyo ezicocekileyo. Le nkqubo ihlala isetyenziswa kwindawo yokuvelisa i-semiconductor ukwenza iifilimu ezibhityileyo kumphezulu wee-wafers. Kwinkqubo yokulungiselela i-SiC nge-CVD, i-substrate ibonakaliswe kwi-precursors enye okanye ngaphezulu eguquguqukayo, esabela ngamakhemikhali ebusweni be-substrate ukuze ifake idiphozithi ye-SiC efunwayo. Phakathi kweendlela ezininzi zokulungiselela izinto ze-SiC, iimveliso ezilungiselelwe yi-deposition ye-chemical vapor deposition zinokufana okuphezulu kunye nokucoceka, kwaye indlela inokulawulwa kwenkqubo eqinile.
Izinto ze-CVD SiC zifanelekile kakhulu ukuba zisetyenziswe kushishino lwe-semiconductor olufuna izinto zokusebenza eziphezulu ngenxa yokuhlanganiswa kwazo okubalaseleyo kwe-thermal, umbane kunye neekhemikhali. Amacandelo e-CVD SiC asetyenziswa ngokubanzi kwizixhobo zokuchopha, izixhobo ze-MOCVD, izixhobo ze-Si epitaxial kunye nezixhobo ze-SiC epitaxial, izixhobo zokulungiswa kwe-thermal ngokukhawuleza kunye nezinye iinkalo.
Lilonke, elona candelo lentengiso likhulu lamacandelo e-CVD SiC lifaka izixhobo zokusebenza. Ngenxa ye-reactivity ephantsi kunye ne-conductivity kwi-chlorine- kunye ne-fluorine-equlethe iigesi ze-etching, i-CVD silicon carbide yinto efanelekileyo kumacandelo afana namakhonkco ekugxilwe kuwo kwi-plasma etching izixhobo.
I-CVD i-silicon carbide components kwi-etching equipment ibandakanya amakhonkco ekugxilwe kuwo, iintloko zeshawari yegesi, iitreyi, amakhonkco e-edge, njl. Ukuthatha i-ringing ring njengomzekelo, i-ring focus licandelo elibalulekileyo elibekwe ngaphandle kwe-wafer kunye nokudibanisa ngokuthe ngqo kwi-wafer. Ngokusebenzisa i-voltage kwindandatho ukugxila kwiplasma edlula kwindandatho, iplasma igxile kwi-wafer ukuphucula ukufana kokucubungula.
Amakhonkco okugxilwa kwendabuko ayenziwe nge-silicon okanye i-quartz. Ngokuqhubela phambili kwe-miniaturization yesekethe edibeneyo, imfuno kunye nokubaluleka kweenkqubo ze-etching kwimveliso yesekethe edibeneyo iyanda, kwaye amandla kunye namandla e-etching plasma ayaqhubeka nokukhula. Ngokukodwa, amandla e-plasma afunekayo kwi-capacitively coupled (CCP) kwizixhobo ze-plasma etching ephezulu, ngoko ke izinga lokusetyenziswa kweringi zokugxila ezenziwe ngezinto ze-silicon carbide liyenyuka. Umzobo ocwangcisiweyo we-CVD silicon carbide focus ring uboniswe ngezantsi:
Ixesha lokuposa: Jun-20-2024