Iipropati ze-Ceramic semiconductor

Iimbonakalo:

I-resistantivity ye-ceramics eneempawu ze-semiconductor malunga ne-10-5 ~ 107ω.cm, kunye neempawu ze-semiconductor zezinto ze-ceramic zingafumaneka nge-doping okanye ukubangela iziphene ze-lattice ezibangelwa ukuphambuka kwe-stoichiometric. IiCeramics zisebenzisa le ndlela ziquka iTiO2,

ZnO, CdS, BaTiO3, Fe2O3, Cr2O3 kunye neSiC. Iimpawu ezahlukeneyo zeiiseramics zesemiconductorkukuba utshintsho lwazo lombane kunye nokusingqongileyo, olunokuthi lusetyenziswe ukwenza iintlobo ezahlukeneyo zezixhobo ezibuthathaka ze-ceramic.

Okufana nobushushu, ubuthathaka berhasi, ukufuma, ubuthathaka, uxinzelelo, ukukhanya kunye nezinye izixhobo zoluvo. Izinto ze-Semiconductor spinel, ezifana ne-Fe3O4, zixutywe kunye nezixhobo ze-spinel ezingenayo i-conductor, njenge-MgAl2O4, kwizisombululo eziqinileyo ezilawulwayo.

I-MgCr2O4, kunye ne-Zr2TiO4, ingasetyenziselwa njenge-thermistors, ezilawulwa ngokucokisekileyo izixhobo zokumelana neqondo lokushisa. I-ZnO inokuguqulwa ngokongeza i-oxides ezifana ne-Bi, Mn, Co kunye ne-Cr.

Uninzi lwezi oxides azinyibiliki ngokuqinileyo kwi-ZnO, kodwa ukuphambuka kumda wokuziinkozo ukwenza umaleko wesithintelo, ukuze ufumane i-ZnO varistor ye-ceramic materials, kwaye luhlobo lwemathiriyeli esebenza kakuhle kwi-varistor ceramics.

I-SiC doping (efana nekhabhoni yomntu omnyama, i-graphite powder) inokulungiselelaizixhobo zesemiconductorkunye nozinzo oluphezulu lweqondo lokushisa, olusetyenziswa njengezinto ezahlukeneyo zokufudumeza, oko kukuthi, i-silicon carbon rods kwiziko lombane lobushushu obuphezulu. Lawula i-resistivity kunye necandelo lomnqamlezo we-SiC ukufezekisa phantse nantoni na oyifunayo

Iimeko zokusebenza (ukuya kwi-1500 ° C), ukwandisa ukuxhathisa kwayo kunye nokunciphisa icandelo lomnqamlezo wento yokufudumala kuya kwandisa ubushushu obuveliswayo. Intonga ye-silicon ye-carbon emoyeni iya kwenzeka kwi-oxidation reaction, ukusetyenziswa kweqondo lokushisa lilinganiselwe ukuya kwi-1600 ° C ngaphantsi, uhlobo oluqhelekileyo lwentonga ye-silicon carbon.

Ubushushu bokusebenza obukhuselekileyo yi-1350°C. Kwi-SiC, i-athomu ye-Si ithatyathelwa indawo yi-athom ye-N, kuba i-N inee-electron ezininzi, kukho ii-electron ezingaphezulu, kwaye inqanaba layo lamandla lisondele kwibhendi yokuqhuba ephantsi kwaye kulula ukuyiphakamisa kwibhendi yokuqhuba, ngoko le meko yamandla. ikwabizwa ngokuba linqanaba labanikeli, esi siqingatha

Abaqhubi zii-semiconductors zohlobo lwe-N okanye ii-semiconductors eziqhuba nge-elektroniki. Ukuba i-athomu ye-Al isetyenziswa kwi-SiC ukuba ithathe indawo ye-athom ye-Si, ngenxa yokunqongophala kwe-electron, imeko yamandla enziweyo isondele kwibhendi ye-electron ye-valence ngasentla, kulula ukwamkela i-electrons, kwaye ke kuthiwa yi-yamkelekileyo.

Inqanaba lamandla eliphambili, elishiya indawo engenanto kwiqela le-valence elinokuthi liqhube ii-electron ngenxa yokuba isikhundla esingenamntu sisebenza ngokufanayo nomthwali wentlawulo encomekayo, ubizwa ngokuba yi-P-type semiconductor okanye i-semiconductor yomngxuma (H. Sarman,1989).