IiSemiconductors:
Umzi-mveliso we-semiconductor ulandela umthetho woshishino "wesizukulwana esinye sobuchwephesha, isizukulwana esinye senkqubo, kunye nesizukulwana esinye sezixhobo", kwaye ukuphuculwa kunye nokuphindaphinda kwezixhobo ze-semiconductor kuxhomekeke kakhulu kwimpumelelo yetekhnoloji yamacandelo achanekileyo. Phakathi kwazo, iindawo ezichanekileyo ze-ceramic zezona zinto zimele ukuchaneka kwezixhobo zesemiconductor, ezinezicelo ezibalulekileyo kuthotho lwamakhonkco okwenziwa kwe-semiconductor anje ngokubeka umphunga wekhemikhali, ukubekelwa umphunga womzimba, ukufakwa kwe-ion, kunye nokufakwa kwe-ion. Okufana neebheringi, iileyili zesikhokelo, ii-linings, i-electrostatic chucks, iingalo zokubamba ngoomatshini, njl njl. Ngokukodwa ngaphakathi kwendawo yesixhobo, idlala indima yenkxaso, ukhuseleko, kunye nokuphazamiseka.
Ukususela ngo-2023, i-Netherlands kunye ne-Japan ziye zakhupha ngokulandelelana imimiselo emitsha okanye imimiselo yorhwebo lwangaphandle kulawulo, ukongeza imimiselo yelayisenisi yokuthumela ngaphandle kwezixhobo ze-semiconductor ezibandakanya oomatshini be-lithography, kunye ne-trend of semiconductor anti-globalization iye yavela ngokuthe ngcembe. Ukubaluleka kolawulo oluzimeleyo lwekhonkco lokubonelela kuye kwabonakala ngakumbi. Ngokujongana nemfuno yokwenziwa kwendawo yezixhobo ze-semiconductor, iinkampani zasekhaya zikhuthaza uphuhliso lwamashishini. I-Zhongci Electronics iye yaqaphela ukugcinwa kweendawo ezichanekileyo ze-high-tech ezifana neepleyiti zokufudumeza kunye ne-electrostatic chucks, ukusombulula ingxaki "ye-bottleneck" yoshishino lwezixhobo ze-semiconductor zasekhaya; I-Dezhi New Materials, umboneleli ophambili wasekhaya we-SiC coated graphite bases kunye ne-SiC etching rings, ugqibe ngempumelelo inkxaso-mali ye-100 yezigidi zeeyuan, njl..
I-silicon nitride ceramic substrates ezisetyenziswa kakhulu kwi-high-conductivity:
I-Silicon nitride ceramic substrates zisetyenziswa ikakhulu kwiiyunithi zamandla, izixhobo ze-semiconductor kunye ne-inverters yezithuthi zombane ezicocekileyo (EVs) kunye nezithuthi zombane ezixubileyo (HEVs), kwaye zinamandla amakhulu emarike kunye nethemba lokusetyenziswa.
Okwangoku, i-thermal conductivity ye-silicon nitride ye-ceramic substrate imathiriyeli yorhwebo ifuna i-thermal conductivity ≥85 W/(m·K), amandla okugoba ≥650MPa, kunye nokuqina kokwaphuka 5~7MPa·m1/2. Iinkampani ezikwaziyo ngokwenene ukuvelisa ngobuninzi i-silicon nitride ceramic substrates ze-thermal conductivity eziphezulu ze-Toshiba Group, i-Hitachi Metals, i-Japan Electric Chemical, i-Japan Maruwa kunye ne-Japan Fine Ceramics.
Uphando lwasekhaya malunga ne-silicon nitride ceramic substrate imathiriyeli yenze inkqubela phambili. I-thermal conductivity ye-silicon nitride ceramic substrate elungiswe yinkqubo ye-tape-casting ye-Beijing Branch ye-Sinoma High-Tech Nitride Ceramics Co., Ltd. yi-100 W/(m·K); I-Beijing Sinoma Artificial Crystal Research Institute Co., Ltd. uye walungiselela ngempumelelo i-silicon nitride ceramic substrate enamandla okugoba ye-700-800MPa, ukuqina kwe-fracture ≥8MPa · m1/2, kunye ne-thermal conductivity ≥80W/(m·K) ngokulungiselela indlela yokucofa kunye nenkqubo.
Ixesha lokuposa: Oct-29-2024