Imisebenzi ephambili ye-silicon carbide boat support kunye ne-quartz boat support iyafana. Inkxaso yesikhephe seSilicon carbide inomsebenzi ogqwesileyo kodwa ixabiso eliphezulu. Ibandakanya enye ubudlelwane kunye nenkxaso yesikhephe se-quartz kwisixhobo sokulungisa ibhetri kunye neemeko zokusebenza ezinzima (ezifana nezixhobo ze-LPCVD kunye nezixhobo zokusasazwa kwe-boron). Kwizixhobo zokusebenza zebhetri ezineemeko eziqhelekileyo zokusebenza, ngenxa yobudlelwane bexabiso, i-silicon carbide kunye nenkxaso ye-quartz yezikhephe ziba ngamacandelo adibeneyo kunye akhuphisanayo.
① Ubudlelwane bokutshintshwa kwi-LPCVD kunye nezixhobo zokusasazwa kwe-boron
Isixhobo se-LPCVD sisetyenziselwa i-oxidation ye-cell tunneling oxidation kunye nenkqubo yokulungiselela umaleko we-polysilicon. Umgaqo wokusebenza:
Ngaphantsi kwemoya ephantsi yoxinzelelo, idityaniswe nobushushu obufanelekileyo, ukusabela kweekhemikhali kunye nokwakheka kwefilimu ye-deposition kufezekiswa ukulungiselela i-ultra-thin tunneling oxide layer kunye nefilimu ye-polysilicon. Kwi-tunneling oxidation kunye nenkqubo yokulungiselela umaleko we-polysilicon, inkxaso yesikhephe inobushushu obuphezulu bokusebenza kunye nefilimu ye-silicon iya kufakwa kumphezulu. I-coefficient yokwandisa i-thermal ye-quartz yahluke kakhulu kuleyo ye-silicon. Xa isetyenziswe kule nkqubo ingentla, kuyimfuneko ukuba rhoqo pickle ukususa i-silicon efakwe phezu komhlaba ukukhusela isikhephe inkxaso ye-quartz ekwaphulweni ngenxa yokwandiswa kwe-thermal kunye nokunciphisa ngenxa ye-coefficient yokwandiswa kwe-thermal eyahlukeneyo kwi-silicon. Ngenxa yokucolwa rhoqo kunye namandla asezantsi obushushu obuphezulu, umnikazi wesikhephe se-quartz unobomi obufutshane kwaye uhlala etshintshwa kwindawo ye-oxidation yetonela kunye nenkqubo yokulungiselela i-polysilicon layer, eyonyusa kakhulu ixabiso lemveliso yeseli yebhetri. I-coefficient yokwandisa ye-silicon carbide isondele kuleyo ye-silicon. Kwi-oxidation yetonela kunye nenkqubo yokulungiselela umaleko wepolysilicon edibeneyo, isibambi sesikhephe esidityanisiweyo se-silicon carbide asifuni kucholwa, sinamandla aphezulu obushushu kunye nobomi benkonzo ende, kwaye yeyona ndlela ilungileyo yokuphatha isikhephe sequartz.
Isixhobo sokwandiswa kweBoron sisetyenziswa ikakhulu kwinkqubo yedoping element zeboron kuhlobo lwe-N-silicon wafer substrate yeseli yebhetri ukulungiselela i-P-type emitter ukwenza i-PN junction. Umgaqo osebenzayo kukuqonda ukusabela kweekhemikhali kunye nokwakheka kwefilimu ye-molecular deposition kwindawo yobushushu obuphezulu. Emva kokuba ifilimu yenziwe, inokusasazwa ngokufudumeza kobushushu obuphezulu ukuqonda umsebenzi we-doping we-silicon wafer surface. Ngenxa yobushushu obuphezulu bokusebenza kwezixhobo zokwandisa i-boron, umnini wesikhephe se-quartz unamandla aphantsi obushushu obuphezulu kunye nobomi obufutshane benkonzo kwisixhobo sokwandiswa kwe-boron. Isibambi sesikhephe esidityanisiweyo se-silicon carbide sinamandla obushushu obuphezulu kwaye yeyona ndlela ilungileyo kumphathi wesikhephe se-quartz kwinkqubo yokwandiswa kwe-boron.
② Ubudlelwane bokutshintshwa kwezinye izixhobo zenkqubo
Iinkxaso zesikhephe ze-SiC zinamandla okuvelisa kunye nokusebenza okugqwesileyo. Amaxabiso abo ngokubanzi aphezulu kunalawo axhasa isikhephe sequartz. Kwiimeko zokusebenza ngokubanzi zezixhobo zokucwangcisa iiseli, umahluko kubomi benkonzo phakathi kweenkxaso zeenqanawa ze-SiC kunye nezixhaso zeenqanawa ze-quartz zincinci. Abathengi abasezantsi bathelekisa kwaye bakhethe phakathi kwexabiso kunye nokusebenza ngokusekelwe kwiinkqubo zabo kunye neemfuno. Inkxaso yesikhephe se-SiC kunye nenkxaso yesikhephe se-quartz iye yahlala kunye kwaye iyakhuphisana. Nangona kunjalo, ingeniso yengeniso ye-SiC exhasa isikhephe iphezulu ngoku. Ngokuhla kwexabiso lemveliso yeSiC isikhephe esixhasayo, ukuba ixabiso lokuthengisa leSiC isikhephe lixhasa ngokusebenzayo liyehla, liya kubeka ukhuphiswano olukhulu kwiinkxaso zesikhephe zequartz.
(2) Umlinganiselo wokusetyenziswa
Umzila weteknoloji yeselula ubukhulu becala iteknoloji ye-PERC kunye ne-TOPCon iteknoloji. Isabelo semarike yeteknoloji ye-PERC yi-88%, kwaye isabelo semarike ye-TOPCon teknoloji yi-8.3%. Isabelo semarike esidityanisiweyo kwezi zibini yi-96.30%.
Njengoko kubonisiwe kulo mfanekiso ungezantsi:
Kwitekhnoloji ye-PERC, izixhaso zesikhephe ziyafuneka kukusasazwa kwe-phosphorus yangaphambili kunye neenkqubo zokufunxa. Kwitekhnoloji ye-TOPCon, izixhaso zesikhephe ziyafuneka kwi-boron diffusion yangaphambili, i-LPCVD, i-back phosphorus diffusion kunye neenkqubo zokufunxa. Okwangoku, izixhaso ze-silicon carbide boat zisetyenziswa kakhulu kwinkqubo ye-LPCVD ye-TOPCon iteknoloji, kwaye ukusetyenziswa kwabo kwinkqubo yokusasazwa kwe-boron kuye kwaqinisekiswa kakhulu.
Umzobo Ukusetyenziswa kwesikhephe sixhasa kwinkqubo yokwenziwa kweeseli:
Qaphela: Emva kokugquma ngaphambili nangasemva kwe-PERC kunye ne-TOPCon technologies, kusekho amanyathelo afana nokuprintwa kwesikrini, i-sintering kunye nokuvavanya kunye nokuhlelwa, okungabandakanyi ukusetyenziswa kwezixhaso zesikhephe kwaye ezingadweliswanga kulo mzobo ungentla.
(3) Indlela yophuhliso lwexesha elizayo
Kwixesha elizayo, phantsi kweempembelelo zezibonelelo zokusebenza ezibanzi ze-silicon carbide isikhephe esixhasayo, ukwanda okuqhubekayo kwabathengi kunye nokuncitshiswa kweendleko kunye nophuculo olusebenzayo lweshishini le-photovoltaic, isabelo sentengiso se-silicon carbide isikhephe esixhasayo kulindeleke ukuba sonyuke ngakumbi.
① Kwindawo yokusebenza ye-LPCVD kunye nezixhobo zokusasazwa kwe-boron, ukusebenza okubanzi kwezixhaso zesikhephe se-silicon carbide kungcono kune-quartz kwaye inobomi obude benkonzo.
② Ukwandiswa kwabathengi be-silicon carbide abavelisi bokuxhasa izikhephe ezimelwe yinkampani kuhamba kakuhle. Abathengi abaninzi kushishino olunje ngeNorth Huachuang, iTekhnoloji yeSongyu kunye neQihao Amandla amatsha sele eqalisile ukusebenzisa izixhaso ze-silicon carbide boat.
③ Ukunciphisa iindleko kunye nokuphucula ukusebenza kakuhle bekusoloko kukusukela kwishishini le-photovoltaic. Ukugcina iindleko ngokusebenzisa iiseli ezinkulu zebhetri enye yezibonakaliso zokunciphisa iindleko kunye nokuphucula ukusebenza kakuhle kwimboni ye-photovoltaic. Ngomkhwa weeseli ezinkulu zebhetri, izibonelelo ze-silicon carbide isikhephe ezixhasayo ngenxa yokusebenza kwazo kakuhle okubanzi ziya kucaca ngakumbi.
Ixesha lokuposa: Nov-04-2024