I-MOCVD Susceptor yokuKhula kwe-Epitaxial

Inkcazelo emfutshane:

I-Semicera's cut-edge MOCVD epitaxial growth susceptors iqhubela phambili inkqubo yokukhula kwe-epitaxial. Iisusceptors zethu ezenziwe ngononophelo ziyilelwe ukwandisa ukubekwa kwezinto kunye nokuqinisekisa ukukhula okuchanekileyo kwe-epitaxial kwimveliso ye-semiconductor.

Igxininise ngokuchanekileyo kunye nomgangatho, i-MOCVD i-epitaxial growth susceptors ibubungqina bokuzibophelela kwe-Semicera ekugqweseni kwizixhobo ze-semiconductor. Thembela kubuchule beSemicera bokuhambisa ukusebenza okuphezulu kunye nokuthembeka kuwo wonke umjikelo wokukhula.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

I-MOCVD Susceptor ye-Epitaxial Growth nge-semicera, isisombululo esikhokelayo esenzelwe ukunyusa inkqubo yokukhula kwe-epitaxial kwizicelo eziphambili ze-semiconductor. I-Semicera's MOCVD Susceptor iqinisekisa ulawulo oluchanekileyo kubushushu kunye nokubekwa kwezinto eziphathekayo, okwenza kube lolona khetho lufanelekileyo lokufumana umgangatho ophezulu we-Si Epitaxy kunye ne-SiC Epitaxy. Ukwakhiwa kwayo okuqinileyo kunye ne-thermal conductivity ephezulu yenza ukuba ukusebenza okuqhubekayo kwiindawo ezifunayo, ukuqinisekisa ukuthembeka okufunekayo kwiinkqubo zokukhula kwe-epitaxial.

Le Susceptor ye-MOCVD iyahambelana nezicelo ezahlukeneyo ze-epitaxial, kubandakanywa nokuveliswa kwe-Monocrystalline Silicon kunye nokukhula kwe-GaN kwi-SiC Epitaxy, okwenza kube yinto ebalulekileyo kubavelisi abafuna iziphumo eziphezulu. Ukongezelela, isebenza ngaphandle komthungo kunye ne-PSS Etching Carrier, i-ICP Etching Carrier, kunye neenkqubo ze-RTP Carrier, ukuphucula inkqubo yokusebenza kakuhle kunye nesivuno. I-susceptor nayo ifanelekile kwizicelo ze-LED Epitaxial Susceptor kunye nezinye iinkqubo eziphambili zokuvelisa i-semiconductor.

Ngoyilo lwayo oluguquguqukayo, i-semicera's MOCVD susceptor ingatshintshwa ukuze isetyenziswe kwi-Pancake Susceptors kunye ne-Barrel Susceptors, enikezela ukuguquguquka kwiiseto ezahlukeneyo zokuvelisa. Ukuhlanganiswa kweeNdawo ze-Photovoltaic kwandisa ngakumbi ukusetyenziswa kwayo, okwenza kube yinto efanelekileyo kuzo zombini i-semiconductor kunye namashishini elanga. Esi sisombululo siphezulu sinikezela ukuzinza okuhle kakhulu kwe-thermal kunye nokuqina, ukuqinisekisa ukusebenza kakuhle kwexesha elide kwiinkqubo zokukhula kwe-epitaxial.

Iimpawu eziphambili

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. Ikristale ye-SiC ecocekileyo igqunywe kwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD
Ukuxinana (g/cc) 3.21
Amandla e-Flexural (Mpa) 470
Ukwandiswa kweThermal (10-6/K) 4
I-Thermal conductivity (W/mK) 300

Ukupakisha kunye nokuThumela

Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:

Ubuninzi (Amaqhekeza) 1 - 1000 >1000
Est. Ixesha(iintsuku) 30 Kuza kuthethathethwana
Semicera Indawo yokusebenzela
Indawo yokusebenza yeSemicera 2
Umatshini wezixhobo
Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
Semicera Ware House
Inkonzo yethu

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