Inkcazo
I-MOCVD Susceptor ye-Epitaxial Growth nge-semicera, isisombululo esikhokelayo esenzelwe ukunyusa inkqubo yokukhula kwe-epitaxial kwizicelo eziphambili ze-semiconductor. I-Semicera's MOCVD Susceptor iqinisekisa ulawulo oluchanekileyo kubushushu kunye nokubekwa kwezinto eziphathekayo, okwenza kube lolona khetho lufanelekileyo lokufumana umgangatho ophezulu we-Si Epitaxy kunye ne-SiC Epitaxy. Ukwakhiwa kwayo okuqinileyo kunye ne-thermal conductivity ephezulu yenza ukuba ukusebenza okuqhubekayo kwiindawo ezifunayo, ukuqinisekisa ukuthembeka okufunekayo kwiinkqubo zokukhula kwe-epitaxial.
Le Susceptor ye-MOCVD iyahambelana nezicelo ezahlukeneyo ze-epitaxial, kubandakanywa nokuveliswa kwe-Monocrystalline Silicon kunye nokukhula kwe-GaN kwi-SiC Epitaxy, okwenza kube yinto ebalulekileyo kubavelisi abafuna iziphumo eziphezulu. Ukongezelela, isebenza ngaphandle komthungo kunye ne-PSS Etching Carrier, i-ICP Etching Carrier, kunye neenkqubo ze-RTP Carrier, ukuphucula inkqubo yokusebenza kakuhle kunye nesivuno. I-susceptor nayo ifanelekile kwizicelo ze-LED Epitaxial Susceptor kunye nezinye iinkqubo eziphambili zokuvelisa i-semiconductor.
Ngoyilo lwayo oluguquguqukayo, i-semicera's MOCVD susceptor ingatshintshwa ukuze isetyenziswe kwi-Pancake Susceptors kunye ne-Barrel Susceptors, enikezela ukuguquguquka kwiiseto ezahlukeneyo zokuvelisa. Ukuhlanganiswa kweeNdawo ze-Photovoltaic kwandisa ngakumbi ukusetyenziswa kwayo, okwenza kube yinto efanelekileyo kuzo zombini i-semiconductor kunye namashishini elanga. Esi sisombululo siphezulu sinikezela ukuzinza okuhle kakhulu kwe-thermal kunye nokuqina, ukuqinisekisa ukusebenza kakuhle kwexesha elide kwiinkqubo zokukhula kwe-epitaxial.
Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. Ikristale ye-SiC ecocekileyo igqunywe kwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
SiC-CVD | ||
Ukuxinana | (g/cc) | 3.21 |
Amandla e-Flexural | (Mpa) | 470 |
Ukwandiswa kweThermal | (10-6/K) | 4 |
I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha kunye nokuThumela
Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:
Ubuninzi (Amaqhekeza) | 1 - 1000 | >1000 |
Est. Ixesha(iintsuku) | 30 | Kuza kuthethathethwana |