Ubomi beNkonzo ende yeSiC efakwe kwi-Graphite Carrier yeSolar Wafer

Ubomi benkonzo ende SiC Coated Graphite Carrier For Solar Wafer Featured Image

Inkcazelo emfutshane:

I-Silicon carbide luhlobo olutsha lweekeramics ezinexabiso eliphezulu lokusebenza kunye neempawu ezintle zezinto eziphathekayo. Ngenxa yeempawu ezinje ngokuqina okuphezulu kunye nokuqina, ukumelana nobushushu obuphezulu, ukuguquguquka okukhulu kwe-thermal kunye nokuxhathisa ukubola kweekhemikhali, iSilicon Carbide inokumelana nayo yonke imichiza ephakathi. Ke ngoko, i-SiC isetyenziswa kakhulu kwimigodi yeoli, kwimichiza, koomatshini kunye ne-airspace, nkqu amandla enyukliya kunye nomkhosi banemfuno zabo ezikhethekileyo kwi-SIC. Esinye isicelo esiqhelekileyo esinokusinika amakhonkco okutywina epompo, i-valve kunye nezixhobo zokukhusela njl.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iingenelo

Ukumelana ne-oxidation yobushushu obuphezulu
Uxhathiso olugqwesileyo lweCorrosion
Ukuxhathisa okulungileyo kweAbrasion
I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

Usetyenziso

-Indawo ekwaziyo ukumelana nokunxiba: ibhulorho, ipleyiti, umbhobho wesanti, umgca wenkanyamba, umphanda wokusila, njl.
-Umgangatho wobushushu obuphezulu: i-siC Slab, iTube yokuCima iFurnace, iTube eRadiant, i-crucible, i-Heating Element, i-Roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikhephe se-SiC, i-Kiln car Structure, i-Setter, njl.
-I-Silicon Carbide Semiconductor: Isikhephe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion ityhubhu, i-wafer fork, ipleyiti yokufunxa, isikhokelo, njl.
-I-Silicon Carbide Seal Field: zonke iintlobo zeringi yokutywina, ukuthwala, i-bushing, njl.
-I-Photovoltaic Field: I-Cantilever Paddle, i-Barrel yokugaya, i-Silicon Carbide Roller, njl.
-Indawo yebhetri yeLithium

I-WAFER (1)

I-WAFER (2)

IiPropati zoBume beSiC

Ipropati	Ixabiso	Indlela
Ukuxinana	3.21 g/cc	I-Sink-float kunye ne-dimension
Ubushushu obuthile	0.66 J/g °K	Isibane se-laser pulsed
Amandla e-Flexural	450 MPa560 MPa	I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
Elastic ModulusOlutsha's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo	2 – 10 µm	I-SEM

Iipropati zoThermal zeSiC

I-Thermal Conductivity	250 W/m °K	Indlela yeLaser flash, RT
Ukwandiswa kweThermal (CTE)	4.5 x 10-6 °K	Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer

IiParameters zobuGcisa

Into	Iyunithi	Idatha
Into	Iyunithi	I-RBSiC(SiSiC)	NBSiC	I-SSiC	RSiC	OSiC
Umxholo weSiC	%	85	75	99	99.9	≥99
Umxholo wesilicon wasimahla	%	15	0	0	0	0
Ubushushu benkonzo enkulu	℃	1380	1450	1650	1620	1400
Ukuxinana	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2,75	2.75-2.85
I-porosity evulekile	%	0	13-15	0	15-18	7-8
Amandla okugoba 20℃	Mpa	250	160	380	100	/
Amandla okugoba 1200℃	Mpa	280	180	400	120	/
Imodyuli ye-elasticity 20℃	Gpa	330	580	420	240	/
Imodyuli ye-elasticity 1200℃	Gpa	300	/	/	200	/
Thermal conductivity 1200℃	W/mK	45	19.6	100-120	36.6	/
I-Coefficient yokwandiswa kwe-thermal	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

I-CVD ye-silicon carbide yokwambathisa kumphezulu wangaphandle we-silicon carbide iimveliso ze-ceramic ezinokufikelela kubunyulu obungaphezulu kwe-99.9999% ukuhlangabezana neemfuno zabathengi kwishishini le-semiconductor.