I-LiNbO3 yokudibanisa i-wafer

Inkcazelo emfutshane:

Ikristale yeLithium niobate ineepropathi ezibalaseleyo ze-electro-optical, acousto-optical, piezoelectric, kunye ne-nonlinear. I-lithium niobate crystal iyikristale ebalulekileyo ye-multifunctional eneempawu ezintle ezingabonakaliyo kunye ne-coefficient enkulu ye-optical optical; inokuphinda ifezekise ukuthelekiseka kwesigaba esingabalulekanga. Njengekristale ye-electro-optical, isetyenziswe njengento ebalulekileyo ye-optical waveguide material; njengekristale ye-piezoelectric, ingasetyenziselwa ukwenza izihlungi ze-SAW eziphakathi kunye nezisezantsi, ii-high-high-high-temperature resistant ultrasonic transducers, njl. Izinto ezisetyenziswayo ze-lithium niobate zisetyenziswa ngokubanzi.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera's LiNbO3 Bonding Wafer yenzelwe ukuhlangabezana neemfuno eziphezulu zokwenziwa kwe-semiconductor ephezulu. Ngeempawu zayo ezikhethekileyo, kubandakanywa ukumelana nokunxiba okuphezulu, ukuzinza okuphezulu kwe-thermal, kunye nococeko olubalaseleyo, esi siqwenga silungele ukusetyenziswa kwizicelo ezifuna ukuchaneka kunye nokusebenza ixesha elide.

Kwishishini le-semiconductor, ii-LiNbO3 Bonding Wafers ziqhele ukusetyenziselwa ukudibanisa iileya ezibhityileyo kwizixhobo ze-optoelectronic, izinzwa, kunye nee-ICs eziphambili. Baxabiswa ngokukodwa kwi-photonics kunye ne-MEMS (i-Micro-Electromechanical Systems) ngenxa yeempawu zabo ze-dielectric ezigqwesileyo kunye nokukwazi ukumelana neemeko zokusebenza ezinzima. I-Semicera's LiNbO3 Bonding Wafer yenzelwe ukuxhasa ikhonkco echanekileyo yomaleko, iphucula ukusebenza ngokubanzi kunye nokuthembeka kwezixhobo ze-semiconductor.

Iipropati ze-Thermal kunye nombane ze-LiNbO3
Indawo yokunyibilika 1250 ℃
Ubushushu beCurie 1140 ℃
I-Thermal conductivity 38 W/m/K @ 25 ℃
I-Coefficient yokwandiswa kwe-thermal (@ 25°C)

//a, 2.0×10-6/K

//c, 2.2×10-6/K

Ukuxhathisa 2×10-6Ω·cm @ 200 ℃
I-Dielectric rhoqo

εS11/ε0=43, εT11/ε0=78

εS33/ε0=28, εT33/ε0= 2

Piezoelectric rhoqo

D22=2.04×10-11C/N

D33=19.22×10-11C/N

I-Electro-optic coefficient

γT33=32 pm/V, γS33= 31pm/V,

γT31=10 pm/V, γS31= 8.6 pm/V,

γT22=6.8 pm/V, γS22= 3.4 pm/V,

Isiqingatha sombane wamaza, DC
Indawo yombane // z, ukukhanya ⊥ Z;
Indawo yombane // x okanye y, ukukhanya ⊥ z

3.03 KV

4.02 KV

Eyenziwe ngokusetyenziswa kwezinto ezisemgangathweni ophezulu, i-LiNbO3 Bonding Wafer iqinisekisa ukuthembeka okuhambelanayo naphantsi kweemeko ezinzima. Ukuzinza kwayo okuphezulu kwe-thermal kwenza ukuba ifaneleke ngokukodwa kwiindawo ezibandakanya ukushisa okuphezulu, njengazo zifunyenwe kwiinkqubo ze-semiconductor epitaxy. Ukongeza, ukucoceka okuphezulu kwe-wafer kuqinisekisa ukungcoliseka okuncinci, kuyenza ibe lukhetho oluthembekileyo kwizicelo ezibalulekileyo ze-semiconductor.

Kwi-Semicera, sizimisele ukubonelela ngezisombululo ezihamba phambili kwishishini. I-LiNbO3 yethu ye-Bonding Wafer inikezela ukuqina okungahambelaniyo kunye nobuchule bokusebenza okuphezulu kwizicelo ezifuna ukucoceka okuphezulu, ukumelana nokunxiba, kunye nokuzinza kwe-thermal. Nokuba yeyemveliso ye-semiconductor ephucukileyo okanye obunye ubuchwephesha obukhethekileyo, esi siqwengana sisebenza njengenxalenye ebalulekileyo yokwenziwa kwesixhobo esibukhali.

Semicera Indawo yokusebenzela
Indawo yokusebenza yeSemicera 2
Umatshini wezixhobo
Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
Semicera Ware House
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