I-LiNbO3 yokudibanisa i-wafer

LiNbO3 Bonding wafer Featured Umfanekiso

Inkcazelo emfutshane:

Ikristale yeLithium niobate ineepropathi ezibalaseleyo ze-electro-optical, acousto-optical, piezoelectric, kunye ne-nonlinear. I-lithium niobate crystal iyikristale ebalulekileyo ye-multifunctional eneempawu ezintle ezingabonakaliyo kunye ne-coefficient enkulu ye-optical optical; inokuphinda ifezekise ukuthelekiseka kwesigaba esingabalulekanga. Njengekristale ye-electro-optical, isetyenziswe njengento ebalulekileyo ye-waveguide optical; njengekristale ye-piezoelectric, ingasetyenziselwa ukwenza izihlungi ze-SAW eziphakathi kunye nezisezantsi, ii-high-high-high-temperature resistant ultrasonic transducers, njl. Izinto ezisetyenziswayo ze-lithium niobate zisetyenziswa ngokubanzi.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera's LiNbO3 Bonding Wafer yenzelwe ukuhlangabezana neemfuno eziphezulu zokwenziwa kwe-semiconductor ephezulu. Ngeempawu zayo ezikhethekileyo, kubandakanywa ukumelana nokunxiba okuphezulu, ukuzinza okuphezulu kwe-thermal, kunye nococeko olubalaseleyo, esi siqwenga silungele ukusetyenziswa kwizicelo ezifuna ukuchaneka kunye nokusebenza ixesha elide.

Kwishishini le-semiconductor, ii-LiNbO3 Bonding Wafers ziqhele ukusetyenziselwa ukudibanisa iileya ezibhityileyo kwizixhobo ze-optoelectronic, izinzwa, kunye nee-ICs eziphambili. Baxabiswa ngokukodwa kwi-photonics kunye ne-MEMS (i-Micro-Electromechanical Systems) ngenxa yeempawu zabo ze-dielectric ezigqwesileyo kunye nokukwazi ukumelana neemeko zokusebenza ezinzima. I-Semicera's LiNbO3 Bonding Wafer yenzelwe ukuxhasa ikhonkco echanekileyo yomaleko, iphucula ukusebenza ngokubanzi kunye nokuthembeka kwezixhobo ze-semiconductor.

Iipropati ze-Thermal kunye nombane ze-LiNbO3
Indawo yokunyibilika	1250 ℃
Ubushushu beCurie	1140 ℃
I-Thermal conductivity	38 W/m/K @ 25 ℃
I-Coefficient yokwandiswa kwe-thermal (@ 25°C)	//a, 2.0×10^-6/K //c, 2.2×10^-6/K
Ukuxhathisa	2×10^-6Ω·cm @ 200 ℃
I-Dielectric rhoqo	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
I-piezoelectric rhoqo	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
I-Electro-optic coefficient	γT₃₃=32 pm/V, γS₃₃= 31pm/V, γT₃₁=10 pm/V, γS₃₁= 8.6 pm/V, γT₂₂=6.8 pm/V, γS₂₂= 3.4 pm/V,
Isiqingatha sombane wamaza, DC Indawo yombane // z, ukukhanya ⊥ Z; Indawo yombane // x okanye y, ukukhanya ⊥ z	3.03 KV 4.02 KV

Eyenziwe ngokusetyenziswa kwezinto ezisemgangathweni ophezulu, i-LiNbO3 Bonding Wafer iqinisekisa ukuthembeka okuhambelanayo naphantsi kweemeko ezinzima. Ukuzinza kwayo okuphezulu kwe-thermal kwenza ukuba ifaneleke ngokukodwa kwiindawo ezibandakanya ukushisa okuphezulu, njengazo zifunyenwe kwiinkqubo ze-semiconductor epitaxy. Ukongeza, ukucoceka okuphezulu kwe-wafer kuqinisekisa ukungcoliseka okuncinci, kuyenza ibe lukhetho oluthembekileyo kwizicelo ezibalulekileyo ze-semiconductor.

Kwi-Semicera, sizimisele ukubonelela ngezisombululo ezihamba phambili kwishishini. I-LiNbO3 yethu ye-Bonding Wafer inikezela ukuqina okungahambelaniyo kunye nobuchule bokusebenza okuphezulu kwizicelo ezifuna ukucoceka okuphezulu, ukumelana nokunxiba, kunye nokuzinza kwe-thermal. Nokuba yeyemveliso ye-semiconductor ephucukileyo okanye obunye ubuchwephesha obukhethekileyo, esi siqwengana sisebenza njengenxalenye ebalulekileyo yokwenziwa kwesixhobo esibukhali.