Ubungakanani obukhulu buphinde baphinda baqhagamshelwe isikhephe se-silicon carbide

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. lishishini lobugcisa obuphezulu obusekwe e-China, sibonelela ngobuchwephesha bokubonelela nge-Semiconductor kushishino lwe-silicon carbide crystal isikhephe somvelisi kunye nomthengisi.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati ze-silicon carbide ehlaziyiweyo

I-silicon carbide ehlaziyiweyo (i-R-SiC) yinto ephezulu yokusebenza enobunzima besibini kuphela kwidayimane, eyenziwe kubushushu obuphezulu obungaphezulu kwe-2000 ℃. Igcina iipropathi ezininzi ezigqwesileyo ze-SiC, ezinje ngamandla obushushu obuphezulu, ukuxhathisa okuqinileyo kwe-corrosion, ukuxhathisa okugqwesileyo kwe-oxidation, ukuchasana kakuhle nokothuka kwe-thermal njalo njalo.

● Iimpawu ezigqwesileyo zoomatshini. I-silicon carbide ehlaziyiweyo inamandla aphezulu kunye nokuqina kune-carbon fiber, ukuchasana kweempembelelo eziphezulu, kunokudlala ukusebenza kakuhle kwiindawo eziphakamileyo zokushisa, kunokudlala ukusebenza kakuhle kokulinganisa kwiimeko ezahlukeneyo. Ukongezelela, ibuye ibe nokuguquguquka okulungileyo kwaye ayonakaliswa lula ngokuzolula kunye nokugoba, okuphucula kakhulu ukusebenza kwayo.

● Ukumelana ne-corrosion ephezulu. I-silicon carbide ehlaziyiweyo inokumelana nokugqwala okuphezulu kwiindidi ezahlukeneyo zeendaba, inokuthintela ukukhukuliseka kweentlobo ezahlukeneyo zeendaba ezitshabalalisayo, inokugcina iipropathi zayo zemishini ixesha elide, inokuqina okuqinileyo, ukuze ibe nobomi obude benkonzo. Ukongezelela, ikwanayo nokuzinza okuhle kwe-thermal, iyakwazi ukulungelelanisa uluhlu oluthile lokutshintsha kweqondo lokushisa, ukuphucula umphumo wesicelo sayo.

● Ukuhlambalaza akufihli. Ngenxa yokuba inkqubo ye-sintering ayinciphisi, akukho xinzelelo olushiyekileyo luya kubangela ukuguqulwa okanye ukuqhekeka kwemveliso, kunye neengxenye ezinemilo enzima kunye nokuchaneka okuphezulu kunokulungiswa.

Iiparamitha zobuGcisa:

图片2

Idatha yeMathiriyeli

材料Material

R-SiC

使用温度Ubushushu bokusebenza (°C)

1600°C (ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化气氛Ubume beOxidizing)

1700°C (还原气氛Ukunciphisa okusingqongileyo)

SiC含量Umxholo weSiC (%)

> 99

自由Si含量Umxholo wesi Si samahala (%)

< 0.1

体积密度Ubuninzi bobuninzi (g/cm3)

2.60-2.70

气孔率I-porosity ebonakalayo (%)

<16

抗压强度Amandla okutyumza (MPa)

> 600

常温抗弯强度Amandla okugoba abandayo (MPa)

80-90 (20°C)

高温抗弯强度Amandla okugoba ashushu (MPa)

90-100 (1400°C)

热膨胀系数

Ukwandiswa komlinganiso wobushushu @1500°C (10-6/°C)

4.70

导热系数Thermal conductivity @1200°C (W/mK)

23

杨氏模量Imodyuli yeelastiki (GPa)

240

抗热震性Ukuxhathisa ukothuka kwe-Thermal

很好Ulunge kakhulu

Isikhephe sekristale ye-silicon (2)
Isikhephe sekristale ye-silicon (3)
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Isikhephe seSilicon Carbide Wafer (5)
Isikhephe seSilicon Carbide Wafer (4)
Semicera Indawo yokusebenzela
Indawo yokusebenza yeSemicera 2
Umatshini wezixhobo
Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
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