NgeSemicera'sI-InP kunye ne-CdTe Substrate, unokulindela umgangatho ophezulu kunye nobunjineli obuchanekileyo ukuhlangabezana neemfuno ezithile zeenkqubo zakho zokuvelisa. Nokuba zenzelwe usetyenziso lwe-photovoltaic okanye izixhobo ze-semiconductor, ii-substrates zethu zenzelwe ukuqinisekisa ukusebenza kakuhle, ukuqina, kunye nokungaguquguquki. Njengomthengisi othembekileyo, i-Semicera izimisele ukuhambisa izisombululo ze-substrate ezikumgangatho ophezulu, ezinokwenziwa ngokwezifiso eziqhuba izinto ezintsha kumacandelo ombane kunye nokuhlaziywa kwamandla.
IiPropati zeCrystalline kunye nezoMbane✽1
| Uhlobo | I-Dopant | EPD (cm–2(Jonga ngezantsi A.) | DF (indawo eMahala isiphene) (cm2, Bona ngezantsi B.） | c/（ccm–3） | Ukuhamba (y cm2/Vs） | I-Resistivit (y Ω・cm) |
| n | Sn | ≦5×104 ≦1×104 ≦5×103 | ────── | (0.5〜6)×1018 | ────── | ────── |
| n | S | ────── | ≧ 10(59.4%) ≧ 15 (87%) .4 | (2〜10)×1018 | ────── | ────── |
| p | Zn | ────── | ≧ 10(59.4%) ≧ 15(87%). | (3〜6)×1018 | ────── | ────── |
| SI | Fe | ≦5×104 ≦1×104 | ────── | ────── | ────── | ≧ 1×106 |
| n | akukho nanye | ≦5×104 | ────── | ≦1×1016 | ≧ 4×103 | ────── |
✽1 Eminye ingcaciso iyafumaneka xa iceliwe.
A.13 Amanqaku aphakathi
1. Ukuxinana komngxuma we-etch yokushenxiswa kulinganiswa ngamanqaku ali-13.
2. Umyinge womlinganiselo wommandla woxinaniso lwe-dislocation ubalwa.
Umlinganiselo woMmandla we-B.DF (kwimeko yesiQinisekiso soMmandla)
1. Ukuxinana komngxuma we-etch wokushenxiswa kwamanqaku angama-69 aboniswe njengasekunene kubalwa.
2. I-DF ichazwa njenge-EPD ngaphantsi kwe-500cm–2
3. Ubuninzi bendawo yeDF ilinganiswe ngale ndlela yi-17.25cm2
I-InP enye ye-Crystal Substrates iiNkcazo eziqhelekileyo
1. Ukuqhelaniswa
Ukuqhelaniswa nomphezulu (100)±0.2º okanye (100)±0.05º
Umphezulu wokuqhelaniswa nomphezulu uyafumaneka xa uceliwe.
Ukuqhelaniswa neflethi YE: (011)±1º okanye (011)±0.1º UKUBA: (011)±2º
Icatshulwe kwi-OF iyafumaneka xa iceliwe.
2. Ukumakishwa kweLaser okusekelwe kumgangatho we-SEMI kuyafumaneka.
3. Iphakheji yomntu ngamnye, kunye nephakheji yegesi ye-N2 ziyafumaneka.
4. I-Etch-and-pack in N2 gas iyafumaneka.
5. Ii-wafers ezixande ziyafumaneka.
Ubalulo olungentla lukumgangatho we-JX'.
Ukuba ezinye iinkcukacha ziyafuneka, nceda ubuze kuthi.
Ukuqhelaniswa
