I-Semicera yazisa umgangatho ophezulu we-semiconductori-silicon carbide cantilever paddles, eyilelwe ukuhlangabezana neemfuno ezingqongqo zokwenziwa kwesemiconductor yanamhlanje.
Iibheyili ye-silicon carbideibonisa uyilo oluphucukileyo olunciphisa ukwanda kwe-thermal kunye ne-warping, iyenza ithembeke kakhulu kwiimeko ezinzima. Ukwakhiwa kwayo okuqinileyo kunika ukuqina okongeziweyo, ukunciphisa umngcipheko wokuphuka okanye ukunxiba, okubaluleke kakhulu ekugcineni isivuno esiphezulu kunye nomgangatho wemveliso ongaguqukiyo. Iisikhephe esisicabauyilo lukwadibanisa ngokungenamthungo kunye nezixhobo eziqhelekileyo zokusetyenzwa kwe-semiconductor, ukuqinisekisa ukuhambelana kunye nokulula ukusetyenziswa.
Enye yezinto ezibalaseleyo zeSemiceraI-SiC ipaddlekukuxhathisa kwayo kwikhemikhali, eyivumela ukuba isebenze kakuhle ngokukodwa kwindawo evezwe kwiigesi ezidliwayo kunye neekhemikhali. Ugxininiso lweSemicera ekwenzeni ngokwezifiso luvumela izisombululo ezilungiselelweyo.
| Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ubushushu bokusebenza (°C) | 1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo) |
| Umxholo weSiC | > 99.96% |
| Isiqulatho sasimahla Si | < 0.1% |
| Unizi lolwapho kuyiwa khona | 2.60-2.70 g / cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla oxinzelelo | > 600 MPa |
| Amandla okugoba okubandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| Ukwandiswa kweThermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| Imodyuli ye-elastic | 240 GPA |
| Ukuxhathisa ukothuka kwe-Thermal | Ulunge kakhulu |
