Ucoceko oluphezulu lwesilicon carbide powder semiconductor izinto ezikrwada ezinobunyulu obufikelela kwi-6N

Inkcazelo emfutshane:

I-Semicera Semiconductor Technology Co., Ltd. lishishini lobugcisa obuphezulu obusekwe eTshayina, sibonelela ngobuchwephesha. Ucoceko oluphezulu lwesilicon carbide powder semiconductor izinto ezikrwada ezinobunyulu obufikelela kwi-6N umenzi kunye nomthengisi.

 

 


Iinkcukacha zeMveliso

Iithegi zeMveliso

ISilicon Carbide (SiC) Isishwankathelo sePowder

I-Silicon carbide (i-SiC), eyaziwa ngokuba yi-carborundum okanye i-emery, yenye yezona zinto zisetyenziswa kakhulu kunye nezoqoqosho. I-SiC ifumaneka ngeendlela ezimbini: i-silicon carbide emnyama kunye ne-silicon carbide eluhlaza.

Inkqubo yeMveliso

I-SiC iveliswa ngokunyibilikisa isanti ye-quartz, i-petroleum coke, okanye i-coal tar, kunye nee-chips zokhuni kumaqondo aphezulu okushisa kwisithando somlilo. I-silicon carbide eluhlaza yenziwe ngokukodwa ngokunyibilikisa i-silicon dioxide ekumgangatho ophezulu kunye ne-petroleum coke, enetyuwa eyongeziweyo njengesongezo.

Iipropati kunye nezicelo

-Ubunzima:Iwa phakathi kwecorundum nedayimane.

-Amandla oomatshini:Iphakamileyo kune-corundum, i-brittle, kwaye ibukhali.

-Ukuqhuba:Unombane kunye ne-thermal conductivity ethile.

Ngenxa yezi propati, i-SiC ifanelekile kwizicelo ezifuna ukuhlala ixesha elide kunye nokulawulwa kwe-thermal. Isetyenziswa kakhulu kumashishini afana ne-abrasives, refractories, kunye ne-semiconductors.

Ukucoceka okuphezulu kwe-silicon carbide powder
高纯碳粉-应用.jpg (1)

Iimpawu zeSilicon Carbide

1. Ukwandiswa kweThermal ephantsi:Yehlisa utshintsho kubukhulu ngokuguquguquka kobushushu.
2. High Thermal Conductivity:Ukudlulisa ubushushu ngokufanelekileyo.
3. Ukumelana noxinzelelo lwe-Thermal:Yehlisa ukubakho koxinzelelo lwe-thermal.
4. Okugqwesileyo kweThermal Shock Resistance:Ukumelana nokutshintsha kobushushu obukhawulezayo.
5. Ukuchasa ukuMdla:Yomelela ngokuchasene nomonakalo wekhemikhali.
6. UkuNyamezelwa koBubushushu obugqithisileyo: Isebenza kakuhle kwiindawo ezibandayo kakhulu kunye nezishushu.
7. Ukumelana neCreep yobushushu obuphezulu:Ugcina uzinzo kunye namandla kumaqondo obushushu aphezulu.

未标题-2

I-Semicera inokwenza ngokwezifiso i-4N-6N i-silicon carbide powder ngokweemfuno zakho, wamkelekile ukuba ubuze.

ISIQULATHO SEKHEMICAL

SiC

98% imizuzu

SiO2

1% ubukhulu

H2O3

0.5% ubukhulu

Fe2O3

0.4% ubukhulu

FC

0.4% ubukhulu

Izinto zeMagnetic

0.02% ubukhulu

IIPROPATI ZOMZIMBA

Ukuqina kukaMoh

9.2

Indawo yokunyibilika

2300℃

Ubushushu bokusebenza

1900℃

Ubunzima obuthile

3.2-3.45 g/cm3

Unizi lolwapho kuyiwa khona

1.2-1.6 g/cm3

Umbala

Mnyama

Imodyuli yokuqina

58-65x106psi

I-Coefficient yoKwandiswa kweThermal

3.9-4.5 x10-6/℃

I-Thermal Conductivity

71-130 W/mK

Ubungakanani benkozo

0-1mm, 1-3 mm, 3-5mm, 5-8mm, 6/10, 10/18,200-0mesh, 325mesh,320mesh,400mesh,600mesh,800mesh,1000mesh,
#24,#36,#46,#60,#80,#100,#120,#180,#220,#240...Okunye okukhethekileyo. inokubonelelwa njengoko kufuneka.

 


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