Semicera High PurityISilicon Carbide Paddleyenziwe ngobunono ukuhlangabezana neemfuno ezingqongqo zeenkqubo zale mihla zokwenziwa kwe-semiconductor. OkuISiC Cantilever Paddleigqwesa kwiindawo ezinobushushu obuphezulu, inika uzinzo olungenakuthelekiswa nanto lwe-thermal kunye nokuqina komatshini. Isakhiwo se-SiC Cantilever yakhelwe ukumelana neemeko ezinzima, ukuqinisekisa ukuphathwa kwe-wafer ethembekileyo kwiinkqubo ezahlukeneyo.
Enye yezinto ezintsha eziphambili zeSiC Paddleluyilo lwayo olukhaphukhaphu kodwa olomeleleyo, oluvumela ukudityaniswa lula kwiinkqubo ezikhoyo. Ukuqhuba kwayo okuphezulu kwe-thermal kunceda ukugcina uzinzo lwe-wafer ngexesha lezigaba ezibalulekileyo ezinje nge-etching kunye ne-deposition, ukunciphisa umngcipheko womonakalo we-wafer kunye nokuqinisekisa imveliso ephezulu yemveliso. Ukusetyenziswa kwe-silicon carbide enoxinano oluphezulu kulwakhiwo lwe-paddle kwandisa ukuxhathisa kwayo ukuguga kunye nokukrazula, ukubonelela ubomi obude bokusebenza kunye nokunciphisa imfuno yokutshintshwa rhoqo.
I-Semicera igxininisa kakhulu ekuqaliseni izinto ezintsha, ukunikezela aISiC Cantilever Paddleengahlangani kuphela kodwa yogqitha imigangatho yoshishino. Le paddle ilungiselelwe ukusetyenziswa kwizicelo ezahlukeneyo ze-semiconductor, ukusuka kwidiphozithi ukuya kwi-etching, apho ukuchaneka kunye nokuthembeka kubalulekile. Ngokudibanisa le teknoloji ye-cutting-edge, abavelisi banokulindela ukuphucula ukusebenza kakuhle, ukunciphisa iindleko zokugcinwa, kunye nomgangatho wemveliso ongaguqukiyo.
| Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ubushushu bokusebenza (°C) | 1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo) |
| Umxholo weSiC | > 99.96% |
| Isiqulatho sasimahla Si | < 0.1% |
| Unizi lolwapho kuyiwa khona | 2.60-2.70 g / cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla oxinzelelo | > 600 MPa |
| Amandla okugoba okubandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| Ukwandiswa kweThermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| Imodyuli ye-elastic | 240 GPA |
| Ukuxhathisa ukothuka kwe-Thermal | Ulunge kakhulu |
