I-silicon carbide (SiC)ngokukhawuleza iba lukhetho olukhethwayo kune-silicon yamalungu e-elektroniki, ngakumbi kwi-bandgap applications. I-SiC ibonelela ngokusebenza kakuhle kwamandla, ubungakanani obubambeneyo, ubunzima obuncitshisiweyo, kunye neendleko eziphantsi zenkqubo iyonke.
Imfuno yokucoceka okuphezulu kwe-SiC powders kumashishini e-elektroniki kunye ne-semiconductor iqhube i-Semicera ukuba iphuhlise ubunyulu obuphezulu.SiC powder. Indlela entsha ye-Semicera yokuvelisa iziphumo ezicocekileyo ze-SiC kwiipowders ezibonisa utshintsho olugudileyo lwe-morphology, ukusetyenziswa kwezinto ezicothayo, kunye nokukhula okuzinzile ngakumbi kwi-setups yokukhula kwekristale.
I-powder yethu ye-SiC ephezulu ecocekileyo ifumaneka ngobukhulu obahlukeneyo kwaye inokwenziwa ngokwezifiso ukuhlangabezana neemfuno ezithile zabathengi. Ukufumana iinkcukacha ezingaphezulu kunye nokuxoxa ngeprojekthi yakho, nceda uqhagamshelane neSemicera.
1. Uluhlu lobungakanani beNcam:
Ukugubungela i-submicron ukuya kwimilinganiselo ye-millimeter.




2. Ukucoceka komgubo


Ingxelo yovavanyo lwe-4N
3.Iikristale zomgubo
Ukugubungela i-submicron ukuya kwimilinganiselo ye-millimeter.


4. IMicroscopic Morphology


5. I-Macroscopic Morphology

-
I-Silicon Carbide Ceramics (SIC) iRingi yokutywina
-
Iinxalenye zesakhiwo se-silicon carbide zingenziwa ngokwezifiso
-
Ubushushu obuphezulu bokumelana nesilicon carbide nozz...
-
Isibuko se-SIC isipili sesilicon carbide ceramic mirro...
-
Izangqa zokutywina zeSilicon Carbide zegesi
-
Ubunyulu obuphezulu CVD Silicon Carbide imathiriyeli ekrwada