Ukucoceka okuphezulu kweSiC Carrier / Umxhasi

Ucoceko oluphezulu lweSiC Carrier/Susceptor Featured Featured Image

Inkcazelo emfutshane:

I-Silicon carbide ephethe i-disc ikwabizwa ngokuba yi-SIC tray, i-silicon carbide etching disc, i-ICP etching disc. I-Silicon carbide tray ye-LED etching (i-SiC tray) φ600mm yinto ekhethekileyo yokudibanisa i-silicon etching (i-ICP etching machine).

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

I-silicon carbide ceramics ineempawu ezigqwesileyo zomatshini kwiqondo lobushushu begumbi, njengamandla aphezulu, ukuqina okuphezulu, imodulus enwebekayo ephezulu, njl. njl., Ikwanayo nozinzo oluphezulu lobushushu obuphezulu njengomgangatho ophezulu we-thermal conductivity, i-coefficient yokwandiswa kwe-thermal ephantsi, kunye nokuqina okuthe ngqo kunye nokukhanya. ukucubungula ukusebenza.
Zifaneleke ngakumbi ukuvelisa iindawo ezichanekileyo ze-ceramic kwizixhobo zesekethe ezihlanganisiweyo ezifana noomatshini be-lithography, ikakhulu esetyenziselwa ukuvelisa i-SiC carrier / susceptor, i-SiC wafer boat, i-disc yokufunxa, ipleyiti yokupholisa amanzi, isibonisi esichanekileyo sokulinganisa, igrayiti kunye nezinye iindawo ze-ceramic zesakhiwo.

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Iingenelo

Ukumelana nobushushu obuphezulu: ukusetyenziswa okuqhelekileyo kwi-1800 ℃
Ukuhanjiswa kwe-thermal ephezulu: ilingana nezinto zegraphite
Ukuqina okuphezulu: ukuqina okwesibini kuphela kwidayimane, i-boron nitride
Ukumelana nokubola: i-asidi eyomeleleyo kunye ne-alkali ayinamhlwa kuyo, ukuxhathisa ukubola kungcono kune-tungsten carbide kunye ne-alumina.
Ubunzima bokukhanya: Ubuninzi obuphantsi, kufuphi ne-aluminiyam
Akukho deformation: i-coefficient ephantsi yokwandiswa kwe-thermal
Ukuxhathisa ukothuka kwe-Thermal: inokumelana nokutshintsha kobushushu obubukhali, ukuxhathisa ukothuka kwe-thermal, kwaye inomsebenzi ozinzile
I-silicon ye-carbide carrier efana ne-sic etching carrier, i-ICP etching susceptor, isetyenziswa ngokubanzi kwi-semiconductor CVD, i-vacuum sputtering njl.

Iingenelo

Ipropati	Ixabiso	Indlela
Ukuxinana	3.21 g/cc	I-Sink-float kunye ne-dimension
Ubushushu obuthile	0.66 J/g °K	Isibane se-laser pulsed
Amandla e-Flexural	450 MPa560 MPa	I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
Elastic ModulusOlutsha's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo	2 – 10 µm	I-SEM

Iprofayile yekhampani

I-WeiTai Energy Technology Co., Ltd. ngumboneleli ohamba phambili we-semiconductor ceramics kunye nomvelisi kuphela e-China onokunika ngaxeshanye ucoceko oluphezulu lwe-silicon carbide ceramic (ingakumbi i-Recrystallized SiC) kunye ne-CVD SiC yokwaleka. Ukongeza, inkampani yethu izibophelele kumasimi e-ceramic afana ne-alumina, i-aluminium nitride, i-zirconia, kunye ne-silicon nitride, njl.

Iimveliso zethu eziphambili ziquka: i-silicon carbide etching disc, i-silicon carbide boat tow, i-silicon carbide wafer boat (Photovoltaic & Semiconductor), i-silicon carbide furnace tube, i-silicon carbide cantilever paddle, i-silicon carbide chucks, i-silicon carbide beam, kunye ne-CVD SiC coating kunye ne-TaC. ukutyabeka. Iimveliso ezisetyenziswa ikakhulu kwi-semiconductor kunye namashishini e-photovoltaic, njengezixhobo zokukhula kwekristale, i-epitaxy, i-etching, ukupakishwa, ukugquma kunye neziko lokusasaza, njl.
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