Ukucoceka okuphezulu kwe-tantalum carbide egqunywe umphanda

Ukucoceka okuphezulu kwe-porous tantalum carbide emgqonyeni ogqunywe nguMfanekiso obonakalayo

Inkcazelo emfutshane:

I-Semicera's High Purity Porous Tantalum Carbide Coated Barrel yenzelwe ngokukodwa i-silicon carbide (SiC) iziko lokukhula kwekristale. Iquka i-high-purity tantalum carbide coating kunye nesakhiwo se-porous, lo mgqomo ubonelela ngokuzinza okukhethekileyo kwe-thermal kunye nokuchasana nokubola kweekhemikhali. Itekhnoloji yokugquma yeSemicera ephucukileyo iqinisekisa ukusebenza okuhlala ixesha elide kunye nokusebenza kakuhle kwiinkqubo zokukhula kwekristale ye-SiC, iyenza ibe lolona khetho lufanelekileyo lokufuna izicelo ze-semiconductor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Porous tantalum carbide cameraumgqomo yi-tantalum carbide njengeyona nto iphambili yokugquma, i-tantalum carbide inokumelana nokugqwesa okugqwesileyo, ukumelana nokunxiba kunye nokuzinza okuphezulu kobushushu. Inokukhusela ngokufanelekileyo izinto ezisisiseko kwi-erosion yeekhemikhali kunye nomoya ophezulu wokushisa. Izinto ezisisiseko zihlala zineempawu zokumelana nobushushu obuphezulu kunye nokumelana nokugqwala. Inokubonelela ngamandla omatshini kunye nokuzinza kweekhemikhali, kwaye ngexesha elifanayo lisebenza njengesiseko sokuxhasatantalum carbide ukutyabeka.

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

Ukusebenza okuphezulu kwetantalum carbide coating_ kuphucula ukusebenza kakuhle kwemveliso yemizi-mveliso kunye nokunciphisa iindleko zokugcinwa komfanekiso obonakalayo

Inxalenye ye-Tac yokukhula kwekristale enye

I-Antiwear tantalum carbide coating_ Ikhusela izixhobo ekunxibeni nasekudlekeni Umfanekiso okhoyo

Igraphite eneringi egqunywe yi-TaC

kunye nangaphandle kwe-TaC

Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu: