Ubunyulu obuphezulu CVD Silicon Carbide imathiriyeli ekrwada

Inkcazelo emfutshane:

I-Semicera high-purity CVD silicon carbide imathiriyeli ekrwada yimathiriyeli ye-semiconductor esebenza kakuhle. Ilungiswa nge-chemical vapor deposition (CVD) kwaye ineempawu ezibalaseleyo ezinjengokucoceka okuphezulu, idigri ephezulu yokubumba, kunye noxinzelelo oluphantsi lwesiphene. Yimathiriyeli esisiseko efanelekileyo yokwenza izixhobo eziphezulu ze-silicon carbide.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-High Purity CVD SiC Raw Material yi-Semicera yimathiriyeli ehamba phambili eyenzelwe ukusetyenziswa kwizicelo eziphezulu zokusebenza ezifuna ukuzinza okukhethekileyo kwe-thermal, ukuqina, kunye neempawu zombane. Yenziwe kwi-high-quality chemical vapor deposition (CVD) i-silicon carbide, le nto eluhlaza ibonelela ngokucoceka okuphezulu kunye nokuhambelana, okwenza kube yinto efanelekileyo yokuvelisa i-semiconductor, i-coatings ephezulu yokushisa, kunye nezinye izicelo ezichanekileyo zoshishino.

I-Semicera's High Purity CVD SiC Raw Material yaziwa ngokuxhathisa kwayo ukunxiba, i-oxidation, kunye nokothuka kwe-thermal, iqinisekisa ukusebenza okuthembekileyo nakwezona ndawo zifuna kakhulu. Ingaba isetyenziswe kwimveliso yezixhobo ze-semiconductor, izixhobo eziqhekezayo, okanye iingubo eziphambili, le nto inika isiseko esiqinileyo sezicelo eziphezulu ezifuna imigangatho ephezulu yokucoceka kunye nokuchaneka.

Nge-Semicera's High Purity CVD SiC Raw Material, abavelisi banokufikelela umgangatho ophezulu wemveliso kunye nokusebenza kakuhle. Esi sixhobo sixhasa uluhlu lwamashishini, ukusuka kwi-electronics ukuya kumandla, ukunika ukuqina kunye nokusebenza okwesibini ukuya kweyesibini.

I-Semicera high-purity CVD silicon carbide imathiriyeli ekrwada inezi mpawu zilandelayo:

▪Ukucoceka okuphezulu:umxholo wokungcola ophantsi kakhulu, oqinisekisa ukuthembeka kwesixhobo.

▪Ubucwebe obuphezulu:ubume obugqibeleleyo bekristale, obunceda ekuphuculeni ukusebenza kwesixhobo.

▪Ukuxinana kwesiphene esisezantsi:inani elincinci leziphene, ukunciphisa ukuvuza kwangoku kwesixhobo.

▪Ubungakanani obukhulu:ubungakanani obukhulu be-silicon carbide substrates inokubonelelwa ukuhlangabezana neemfuno zabathengi abahlukeneyo.

▪Inkonzo eyenzelwe wena:iintlobo ezahlukeneyo kunye neenkcukacha zezinto ze-silicon carbide zinokuthi zenziwe ngokweemfuno zabathengi.

u_107204252_192496881&fm_30&app_106&f_JPEG

Izinto eziluncedo kwimveliso

▪ iBandgap ebanzi:I-Silicon carbide inophawu olubanzi lwe-bandgap, eyenza ukuba ibe nokusebenza okugqwesileyo kwiindawo ezirhabaxa ezinje ngobushushu obuphezulu, uxinzelelo oluphezulu, kunye nokuphindaphindeka okuphezulu.

▪Ukophuka kombane ophezulu:Izixhobo ze-silicon ze-carbide zine-voltage ephezulu yokuqhekeka kwaye zinokwenza izixhobo zamandla aphezulu.

▪Ukuhanjiswa kwe-thermal ephezulu:I-silicon carbide ine-conductivity egqwesileyo ye-thermal, ehambelana nokutshatyalaliswa kobushushu besixhobo.

▪Ukushukuma okuphezulu kwe-electron:Izixhobo ze-silicon ze-carbide zinokuhamba kwe-electron ephezulu, enokunyusa ubuninzi bokusebenza kwesixhobo.