Izinto zokufudumeza kwi-MOCVD Substrate

Inkcazelo emfutshane:

I-Semicera's Heating Elements ye-MOCVD Substrate yenzelwe ukunika ulawulo oluchanekileyo noluzinzileyo lobushushu kwiinkqubo zeMetal-Organic Chemical Vapor Deposition (MOCVD). Yenziwe ngegraphite ekumgangatho ophezulu, ezi zinto zokufudumeza zibonelela nge-conductivity ekhethekileyo ye-thermal, ukufudumeza okufanayo, kunye nokuthembeka kwexesha elide. Efanelekileyo kwimveliso ye-semiconductor, ukuveliswa kwe-LED, kunye nokusetyenziswa kwezinto eziphambili, izinto zokufudumeza ze-Semicera ziqinisekisa ukusebenza okuhambelanayo, ukwandisa inkqubo yakho ye-MOCVD substrate yokusebenza kakuhle kunye nomgangatho.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili zesifudumezi segraphite:

1. ukufana kwesakhiwo sokufudumala.

2. Ukuqhuba kakuhle kombane kunye nomthwalo ophezulu wombane.

3. ukumelana nomhlwa.

4. i-inoxidizability.

5. ukucoceka kweekhemikhali eziphezulu.

6. amandla aphezulu oomatshini.

Inzuzo inamandla okusebenza, ixabiso eliphezulu kunye nokugcinwa okuphantsi. Sinokuvelisa i-anti-oxidation kunye nobomi obude be-graphite crucible, i-graphite mold kunye nazo zonke iindawo zesifudumezi segraphite.

MOCVD-Substrate-Heater-Heating-Elements-For-MOCVD3-300x300

Iiparamitha eziphambili zesifudumezi segraphite

Inkcazo yobuGcisa	I-Semicera-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6