Izinto zokufudumeza kwi-MOCVD Substrate

Izinto zokufudumeza zeMOCVD Substrate Featured Image

Inkcazelo emfutshane:

ISemicera Energy Technology Co., Ltd. ngumboneleli ohamba phambili weeseramics zesemiconductor eziphucukileyo kwaye nguye kuphela umenzi eChina onokunika ngaxeshanye ucoceko oluphezulu lwesilicone carbide ceramic (ingakumbiRecrystallized SiC) kunye neCVD SiC coating. Ukongeza, inkampani yethu izibophelele kumasimi e-ceramic afana ne-alumina, i-aluminium nitride, i-zirconia, kunye ne-silicon nitride, njl.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili zesifudumezi segraphite:

1. ukufana kwesakhiwo sokufudumala.

2. Ukuqhuba kakuhle kombane kunye nomthwalo ophezulu wombane.

3. ukumelana nomhlwa.

4. i-inoxidizability.

5. ukucoceka kweekhemikhali eziphezulu.

6. amandla aphezulu oomatshini.

Inzuzo inamandla okusebenza, ixabiso eliphezulu kunye nokugcinwa okuphantsi. Sinokuvelisa i-anti-oxidation kunye nobomi obude be-graphite crucible, i-graphite mold kunye nazo zonke iindawo zesifudumezi segraphite.

MOCVD-Substrate-Heater-Heating-Elements-For-MOCVD3-300x300

Iiparamitha eziphambili zesifudumezi segraphite

Inkcazo yobuGcisa	I-Semicera-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6