Iisubstrates zeGallium Nitride|GaN Wafers

Gallium Nitride Substrates|GaN Wafers Featured Image

Inkcazelo emfutshane:

I-Gallium nitride (i-GaN), njenge-silicon carbide (i-SiC), ikwisizukulwana sesithathu semathiriyeli ye-semiconductor enobubanzi be-gap band, kunye nobubanzi be-gap enkulu, i-thermal conductivity ephezulu, izinga eliphezulu lokufuduka kwe-electron, kunye nentsimi yombane ebalaseleyo. iimpawu.Izixhobo ze-GaN zinoluhlu olubanzi lwamathemba esicelo kwi-frequency ephezulu, isantya esiphezulu kunye neendawo zokufunwa kwamandla aphezulu ezifana nezibane zokulondoloza amandla e-LED, i-laser projection display, izithuthi zamandla amatsha, igridi ehlakaniphile, unxibelelwano lwe-5G.

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Isizukulwana sesithathu semiconductor izixhobo ikakhulu ziquka SiC, GaN, idayimane, njl., kuba umsantsa band yayo ububanzi (Umzekelo) mkhulu okanye ilingana 2.3 electron volts (eV), eyaziwa ngokuba band gap semiconductor ebanzi imathiriyeli. Xa kuthelekiswa nezixhobo ze-semiconductor zesizukulwana sokuqala kunye nesesibini, izixhobo ze-semiconductor zesizukulwana sesithathu zineengenelo ze-thermal conductivity ephezulu, i-high breakdown ibala lombane, izinga eliphezulu lokufuduka kwe-electron kunye namandla aphezulu okubambisana, anokuthi ahlangabezane neemfuno ezintsha zeteknoloji ye-elektroniki yanamhlanje ephezulu. ubushushu, amandla aphezulu, uxinzelelo oluphezulu, amaza omoya aphezulu kunye nokumelana nemitha kunye nezinye iimeko ezinzima. Inamathemba abalulekileyo okusebenza kwiinkalo zokhuselo lwelizwe, inqwelomoya, i-aerospace, ukuhlola i-oyile, ukugcinwa kwamehlo, njl., kwaye inokunciphisa ukulahlekelwa kwamandla ngaphezu kwe-50% kumashishini amaninzi anobuchule afana nonxibelelwano lwe-broadband, amandla elanga, ukuveliswa kweemoto, ukukhanyisa kwe-semiconductor, kunye negridi ehlakaniphile, kwaye inokunciphisa umthamo wesixhobo ngaphezu kwe-75%, into ebalulekileyo ebalulekileyo kuphuhliso lwenzululwazi yoluntu kunye nobuchwepheshe.

Into 项目	I-GaN-FS-CU-C50	I-GaN-FS-CN-C50	I-GaN-FS-C-SI-C50
Ububanzi 晶圆直径	50.8 ± 1 mm
Ukutyeba厚度	350 ± 25 μm
Ukuqhelaniswa 晶向	Inqwelomoya ye-C (0001) isuka kwi-engile ukuya ku-M-axis 0.35 ± 0.15°
IPlathi eNkulu 主定位边	(1-100) 0 ± 0.5 °, 16 ± 1 mm
IFlethi yesibini 次定位边	(11-20) 0 ± 3 °, 8 ± 1 mm
Ukuqhuba 导电性	N-uhlobo	N-uhlobo	ISemi-Insulating
Ukuxhathisa (300K) 电阻率	< 0.1 Ω·cm	<0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 μm
THOBEKA 弯曲度	≤ 20 μm
Ga Face Surface Uburhabaxa Ga面粗糙度	< 0.2 nm (ilungisiwe);
	okanye <0.3 nm (ipolishiwe kunye nonyango olungaphezulu lwe-epitaxy)
N Ukurhabaxa kobuso bobuso N面粗糙度	0.5 ~ 1.5 μm
	ukhetho: 1 ~ 3 nm (umhlaba omhle); < 0.2 nm (ilungisiwe)
Uxinaniso lokuTyeka 位错密度	Ukususela kwi-1 x 105 ukuya kwi-3 x 106 cm-2 (ibalwa yi-CL)*
Ubuninzi beSiphene esikhulu 缺陷密度	<2cm-2
Indawo enokusetyenziswa 有效面积	> 90% (umda kunye neziphene ezinkulu zingabandakanywa)
Ingenziwa ngokwezifiso ngokweemfuno zabathengi, isakhiwo esahlukileyo se-silicon, isafire, i-SiC esekelwe kwi-GaN epitaxial sheet.