Semicerangokuzingca iveza ubukhali bayoGaN Epitaxyiinkonzo, eziyilelwe ukuhlangabezana neemfuno ezisoloko zivela kushishino lwesemiconductor. I-Gallium nitride (i-GaN) yinto eyaziwayo ngeempawu zayo ezikhethekileyo, kwaye iinkqubo zethu zokukhula kwe-epitaxial ziqinisekisa ukuba ezi zibonelelo zifezekiswa ngokupheleleyo kwizixhobo zakho.
Imigangatho yeGaN eSebenza ngokuPhezulu Semiceraigxile kwimveliso yomgangatho ophezuluGaN Epitaxyiileya, ezinikezela ngococeko olungenakuthelekiswa nanto lwempahla kunye nemfezeko yolwakhiwo. Ezi maleko zibaluleke kakhulu kwiinkqubo ezahlukeneyo, ukusuka kumandla ombane ukuya kwi-optoelectronics, apho ukusebenza okuphezulu kunye nokuthembeka kubalulekile. Iindlela zethu zokukhula ezichanekileyo ziqinisekisa ukuba umaleko ngamnye we-GaN uhlangabezana nemigangatho efunekayo kwizixhobo ezibukhali.
Ilungiselelwe ukusebenza ngokufanelekileyoIGaN Epitaxyebonelelwa yiSemicera yenzelwe ngokukodwa ukuphucula ukusebenza kakuhle kwamalungu akho e-elektroniki. Ngokuzisa i-low-defect, i-high-purity-purity ye-GaN layers, senza ukuba izixhobo zisebenze kwi-frequencies ephezulu kunye ne-voltages, kunye nokulahlekelwa kwamandla okucuthiweyo. Oku kulungelelaniswa ngundoqo kwizicelo ezifana ne-high-electron-mobility transistors (HEMTs) kunye ne-light-emitting diodes (LEDs), apho ukusebenza kakuhle kubaluleke kakhulu.
Amandla osetyenziso oluhlukeneyo Semicera'sGaN Epitaxyiyaguquguquka, ibonelela kuluhlu olubanzi lwemizi-mveliso kunye nezicelo. Nokuba uphuhlisa izandisi zamandla, amacandelo e-RF, okanye i-laser diode, iileya zethu ze-GaN epitaxial zibonelela ngesiseko esifunekayo ekusebenzeni okuphezulu, izixhobo ezithembekileyo. Inkqubo yethu inokulungelelaniswa ukuhlangabezana neemfuno ezithile, ukuqinisekisa ukuba iimveliso zakho zifezekisa iziphumo ezilungileyo.
Ukuzibophelela kuMgangathoUmgangatho lilitye lembombo leSemiceraIndlela yokuGaN Epitaxy. Sisebenzisa itekhnoloji yokukhula kwe-epitaxial ephucukileyo kunye nemilinganiselo engqongqo yokulawula umgangatho ukuvelisa iileya ze-GaN ezibonisa ukufana okugqwesileyo, ingxinano ephantsi, kunye neempawu eziphezulu zemathiriyeli. Oku kuzibophelela kumgangatho kuqinisekisa ukuba izixhobo zakho azihlangani kuphela kodwa zigqithise imigangatho yoshishino.
Iindlela ezintsha zokuKhula Semiceraiphambili ekuveliseni izinto ezintsha kwinkalo yeGaN Epitaxy. Iqela lethu lihlala liphonononga iindlela ezintsha kunye netekhnoloji yokuphucula inkqubo yokukhula, ukuhambisa iileya ze-GaN ezineempawu ezongeziweyo zombane kunye ne-thermal. Ezi nguqulelo ziguqulela kwizixhobo ezisebenza ngcono, ezikwaziyo ukuhlangabezana neemfuno zezicelo zesizukulwana esilandelayo.
Izisombululo ezenzelwe wena kwiiProjekthi zakhoUkuqaphela ukuba iprojekthi nganye ineemfuno ezizodwa,Semicerainikeza ezilungiselelweyoGaN Epitaxyizisombululo. Nokuba ufuna iiprofayili ezithile ze-doping, ubukhulu bomaleko, okanye ukugqitywa komphezulu, sisebenza ngokusondeleyo nawe ukuphuhlisa inkqubo ehlangabezana neemfuno zakho kanye. Injongo yethu kukukubonelela ngeemaleko ze-GaN eziyilwe ngokuchanekileyo ukuxhasa ukusebenza kwesixhobo sakho kunye nokuthembeka.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
