I-Semicera inebhongo ngokubonisa iGa2O3ISubstrate, imathiriyeli ehamba phambili elungele ukuguqula amandla ombane kunye ne-optoelectronics.IGallium oxide (Ga2O3) isubstratezaziwa nge-bandgap yazo ye-ultra-wide, ezenza zilungele izixhobo eziphezulu zamandla kunye ne-high-frequency.
Ezona mpawu:
• I-Ultra-Wide Bandgap: Ga2I-O3 inikezela ngebhendi emalunga ne-4.8 eV, iphucula kakhulu amandla ayo okuphatha amandla ombane aphezulu kunye namaqondo obushushu xa kuthelekiswa nezinto zemveli ezifana neSilicon kunye neGaN.
• I-Voltage yoKwahlulwa okuPhezulu: Ngommandla wokohlulwa okhethekileyo, iGa2O3ISubstrateifanelekile kwizixhobo ezifuna ukusebenza kombane ophezulu, ukuqinisekisa ukusebenza kakuhle kunye nokuthembeka.
• Ukuzinza kwe-Thermal: Uzinzo oluphezulu lwe-thermal lwe-thermal luyenza ifaneleke kwizicelo kwiindawo ezigqithiseleyo, ukugcina ukusebenza phantsi kweemeko ezinzima.
• Izicelo eziNgcono: Ilungele ukusetyenziswa kwi-high-effective transistors yamandla, izixhobo ze-UV optoelectronic, kunye nokunye, ukubonelela ngesiseko esomeleleyo seenkqubo zombane eziphucukileyo.
Yiba namava ngekamva letekhnoloji ye-semiconductor ngeSemicera'sGa2O3ISubstrate. Yenzelwe ukuhlangabezana neemfuno ezikhulayo zamandla aphezulu kunye ne-high-frequency electronics, le substrate ibeka umgangatho omtsha wokusebenza kunye nokuqina. Themba iSemicera ukuba ikhuphe izisombululo ezintsha kwezona zicelo zinzima.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
