Semicerangokuzingca inikaGa2O3Epitaxy, isisombululo se-state-of-art esenzelwe ukutyhala imida yamandla ombane kunye ne-optoelectronics. Le teknoloji ye-epitaxial iqhubela phambili iphakamisa iipropathi ezizodwa ze-Gallium Oxide (Ga2O3) ukuhambisa ukusebenza okuphezulu kwizicelo ezibango.
Ezona mpawu:
• IBandgap eBanzi eKhethekileyo: Ga2O3EpitaxyIbonisa i-ultra-wide bandgap, evumela ukutshatyalaliswa kombane ophezulu kunye nokusebenza ngokufanelekileyo kwiindawo eziphezulu zamandla.
•I-High Thermal Conductivity: I-epitaxial layer inika i-conductivity egqwesileyo ye-thermal, iqinisekisa ukusebenza okuzinzile naphantsi kweemeko eziphezulu zokushisa, okwenza kube yinto efanelekileyo kwizixhobo eziphezulu ze-frequency.
•Umgangatho weMaterial oPhezulu: Ukufezekisa umgangatho wekristale ophezulu kunye neziphene ezincinci, ukuqinisekisa ukusebenza kakuhle kwesixhobo kunye nokuphila ixesha elide, ngakumbi kwizicelo ezibalulekileyo ezifana ne-transistors yamandla kunye ne-UV detectors.
•Ukuguquguquka kwizicelo: Ifaneleke ngokugqibeleleyo amandla ombane, izicelo zeRF, kunye ne-optoelectronics, ibonelela ngesiseko esithembekileyo sezixhobo ze-semiconductor zesizukulwana esilandelayo.
Fumanisa ukubanakho kweGa2O3Epitaxykunye nezisombululo ezintsha zeSemicera. Iimveliso zethu ze-epitaxial zenzelwe ukuhlangabezana nemigangatho ephezulu yomgangatho kunye nokusebenza, okwenza izixhobo zakho zisebenze ngokufanelekileyo kunye nokuthembeka. Khetha iSemicera yetekhnoloji ye-semiconductor yokusika.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
