CVD Tantalum Carbide Coated Upper Halfmoon

Inkcazelo emfutshane:

Ngokufika kwe-8-intshi ye-silicon carbide (SiC) wafers, iimfuno zeenkqubo ezahlukeneyo ze-semiconductor ziye zaqina ngakumbi, ngakumbi kwiinkqubo ze-epitaxy apho amaqondo okushisa angadlula i-2000 degrees Celsius. Izinto eziqhelekileyo ze-susceptor, ezifana ne-graphite ehlanganiswe ne-silicon carbide, ithande ukuzithoba kula maqondo obushushu aphezulu, ukuphazamisa inkqubo ye-epitaxy. Nangona kunjalo, i-CVD tantalum carbide (TaC) iwujonga kakuhle lo mba, imelana namaqondo obushushu ukuya kuma 2300 degrees Celsius kwaye inika ubomi benkonzo obude. Qhagamshelana neSemicera's CVD Tantalum Carbide Coated Upper Halfmoonukujonga ngakumbi malunga nezisombululo zethu eziphambili.

 


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

 

Ngokufika kwe-8-intshi ye-silicon carbide (SiC) wafers, iimfuno zeenkqubo ezahlukeneyo ze-semiconductor ziye zaqina ngakumbi, ngakumbi kwiinkqubo ze-epitaxy apho amaqondo okushisa angadlula i-2000 degrees Celsius. Izinto eziqhelekileyo ze-susceptor, ezifana ne-graphite ehlanganiswe ne-silicon carbide, ithande ukuzithoba kula maqondo obushushu aphezulu, ukuphazamisa inkqubo ye-epitaxy. Nangona kunjalo, i-CVD tantalum carbide (TaC) iwujonga kakuhle lo mba, imelana namaqondo obushushu ukuya kuma 2300 degrees Celsius kwaye inika ubomi benkonzo obude. Qhagamshelana neSemicera's CVD Tantalum Carbide Coated Upper Halfmoonukujonga ngakumbi malunga nezisombululo zethu eziphambili.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

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kunye nangaphandle kwe-TaC

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Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu:

 
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Isixhobo esigqunywe yi-TaC

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Igraphite ene-TaC coated reactor

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Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
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