I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor.Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.
Ngokufika kwe-8-intshi ye-silicon carbide (SiC) wafers, iimfuno zeenkqubo ezahlukeneyo ze-semiconductor ziye zaqina ngakumbi, ngakumbi kwiinkqubo ze-epitaxy apho amaqondo okushisa angadlula i-2000 degrees Celsius.Izinto eziqhelekileyo ze-susceptor, ezifana ne-graphite ehlanganiswe ne-silicon carbide, ithande ukuzithoba kula maqondo obushushu aphezulu, ukuphazamisa inkqubo ye-epitaxy.Nangona kunjalo, i-CVD tantalum carbide (TaC) iwujonga kakuhle lo mba, imelana namaqondo obushushu ukuya kuma 2300 degrees Celsius kwaye inika ubomi benkonzo obude.Qhagamshelana neSemicera's I-CVD Tantalum Carbide Coated Halfmoon Partukujonga ngakumbi malunga nezisombululo zethu eziphambili.
Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D.Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile.Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.
![微信图片_20240227150045](http://www.semi-cera.com/uploads/acd12bbb1-300x225.png)
kunye nangaphandle kwe-TaC
![微信图片_20240227150053](http://www.semi-cera.com/uploads/b53a51be1-300x225.png)
Emva kokusebenzisa i-TaC (ekunene)
Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide.Ngezantsi yimizekelo yeesampulu zethu:
![3](http://www.semi-cera.com/uploads/330-300x300.png)
Isixhobo esigqunywe yi-TaC
![4](http://www.semi-cera.com/uploads/425-300x300.png)
Igraphite ene-TaC coated reactor
![0(1)](http://www.semi-cera.com/uploads/01.png)
![Semicera Indawo yokusebenzela](http://www.semi-cera.com/uploads/Semicera-Work-place2.jpg)
![Indawo yokusebenza yeSemicera 2](http://www.semi-cera.com/uploads/Semicera-work-place-22.jpg)
![Umatshini wezixhobo](http://www.semi-cera.com/uploads/Equipment-machine2.jpg)
![Semicera Ware House](http://www.semi-cera.com/uploads/Semicera-Ware-House1.jpg)
![Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD](http://www.semi-cera.com/uploads/CNN-processing-chemical-cleaning-CVD-coating2.jpg)
![Inkonzo yethu](http://www.semi-cera.com/uploads/Our-service3.jpg)