I-CVD Tantalum Carbide Coated Halfmoon Part

Inkcazelo emfutshane:

Ngokufika kwe-8-intshi ye-silicon carbide (SiC) wafers, iimfuno zeenkqubo ezahlukeneyo ze-semiconductor ziye zaqina ngakumbi, ngakumbi kwiinkqubo ze-epitaxy apho amaqondo okushisa angadlula i-2000 degrees Celsius.Izinto eziqhelekileyo ze-susceptor, ezifana ne-graphite ehlanganiswe ne-silicon carbide, ithande ukuzithoba kula maqondo obushushu aphezulu, ukuphazamisa inkqubo ye-epitaxy.Nangona kunjalo, i-CVD tantalum carbide (TaC) iwujonga kakuhle lo mba, imelana namaqondo obushushu ukuya kuma 2300 degrees Celsius kwaye inika ubomi benkonzo obude.Qhagamshelana neSemicera's I-CVD Tantalum Carbide Coated Halfmoon Partukujonga ngakumbi malunga nezisombululo zethu eziphambili.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor.Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

 

Ngokufika kwe-8-intshi ye-silicon carbide (SiC) wafers, iimfuno zeenkqubo ezahlukeneyo ze-semiconductor ziye zaqina ngakumbi, ngakumbi kwiinkqubo ze-epitaxy apho amaqondo okushisa angadlula i-2000 degrees Celsius.Izinto eziqhelekileyo ze-susceptor, ezifana ne-graphite ehlanganiswe ne-silicon carbide, ithande ukuzithoba kula maqondo obushushu aphezulu, ukuphazamisa inkqubo ye-epitaxy.Nangona kunjalo, i-CVD tantalum carbide (TaC) iwujonga kakuhle lo mba, imelana namaqondo obushushu ukuya kuma 2300 degrees Celsius kwaye inika ubomi benkonzo obude.Qhagamshelana neSemicera's I-CVD Tantalum Carbide Coated Halfmoon Partukujonga ngakumbi malunga nezisombululo zethu eziphambili.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D.Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile.Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

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kunye nangaphandle kwe-TaC

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Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide.Ngezantsi yimizekelo yeesampulu zethu:

 
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Isixhobo esigqunywe yi-TaC

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Igraphite ene-TaC coated reactor

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Semicera Indawo yokusebenzela
Indawo yokusebenza yeSemicera 2
Umatshini wezixhobo
Semicera Ware House
Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
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