I-CVD SiC Etching Ring

CVD SiC Etching Ring Featured Umfanekiso

Inkcazelo emfutshane:

IRingi ye-CVD SiC Etching evela kwiSemicera yenzelwe ukuhlangabezana neemfuno eziqatha zokwenziwa kwesemiconductor. Iyilwe kwi-silicon carbide ekumgangatho ophezulu, le ring etching iqinisekisa ukusebenza okuphezulu kwiinkqubo ezahlukeneyo zokutsala. I-Semicera ibeka phambili ukuqina kunye nokuchaneka, isenza amakhonkco ethu e-etching abe yinto ebalulekileyo kuso nasiphi na isicelo se-semiconductor ephezulu.

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Kutheni iSilicon Carbide igqunywa?

I-CVD SiC Etching Ring evela kwi-Semicera, isisombululo sokuqala esenzelwe iinkqubo zokuvelisa ze-semiconductor eziphambili. Iringi zethu zokutsala ziyilwe ngobuchwephesha ukuphucula ukusebenza kweentloko zeshawari ze-CVD SiC, ziqinisekisa iziphumo ezizezona zilungileyo ngexesha lenkqubo yokusasazwa. Ngolwakhiwo oluqinileyo kunye nobunjineli obuchanekileyo, ezi zindandatho zibonelela ngokuthembeka kunye nokusebenza kakuhle okufunekayo kwizicelo ezikumgangatho ophezulu owomileyo.

Kwi-Semicera, siyayiqonda indima ebalulekileyo edlalwa yi-silicon carbide kwitekhnoloji ye-semiconductor. Izangqa zethu ze-CVD SiC etching zenzelwe ngokukodwa ukulungiselela iinkqubo ezahlukeneyo, kubandakanya i-MOCVD kunye nezinye iindlela zokutsala. Ukuqulunqwa okuqinileyo kwe-SiC kuqinisekisa ukuzinza okuphezulu kwe-thermal kunye nokuxhathisa iikhemikhali, okwenza amakhonkco ethu e-etching abe lolona khetho lukhethwayo kwezona ndawo zifuna kakhulu.

Ukuzibophelela kwethu ekuqaliseni izinto ezintsha kunye nomgangatho kuqinisekisa ukuba yonke i-CVD SiC etching ring ihlangabezana neyona migangatho iphezulu yoshishino. Khetha iSemicera ngezisombululo zakho zokutsala kunye namava okusebenza ngokungenakulinganiswa kunye nokuqina okulungiselelwe iimfuno zakho ezizodwa. Ngobuchule bethu kwiintloko zeeshawari ze-SiC kunye netekhnoloji yokufaka itekhnoloji, silapha ukuxhasa impumelelo yakho kwicandelo le-semiconductor.

Kwintsimi ye-semiconductor, ukuzinza kwecandelo ngalinye kubaluleke kakhulu kuyo yonke inkqubo. Nangona kunjalo, kwindawo ephezulu yokushisa, i-graphite i-oxidized ngokulula kwaye ilahleka, kwaye i-coating ye-SiC inokubonelela ngokhuseleko oluzinzileyo kwiingxenye zegraphite. KwiSemiceraiqela, sinezixhobo zethu zokucoca igraphite, ezinokulawula ukucoceka kwegraphite ngaphantsi kwe-5ppm. Ukucoceka kwe-silicon carbide coating nako kungaphantsi kwe-5ppm.