Silicon carbide(SiC) epitaxy
I-tray ye-epitaxial, ebambe i-substrate ye-SiC yokukhulisa i-SiC epitaxial slice, ibekwe kwigumbi lokuphendula kwaye iqhagamshelane ngokuthe ngqo ne-wafer.
Inxalenye ephezulu yesiqingatha senyanga sisithwala sezinye izixhobo zegumbi lokuphendula lezixhobo ze-Sic epitaxy, ngelixa isiqingatha senyanga esisezantsi siqhagamshelwe kwityhubhu ye-quartz, sazisa igesi ukuqhuba isiseko se-susceptor ukujikeleza. zinolawulo lobushushu kwaye zifakwe kwigumbi lokusabela ngaphandle kokudibana ngokuthe ngqo ne-wafer.
Si epitaxy
I-tray, ebambe i-Si substrate yokukhulisa i-Si epitaxial slice, ibekwe kwigumbi lokuphendula kwaye iqhagamshelane ngqo ne-wafer.
Isangqa sokufudumala sifumaneka kwindandatho yangaphandle ye-Si epitaxial substrate tray kwaye isetyenziselwa ukulinganisa kunye nokufudumeza. Ifakwe kwigumbi lokuphendula kwaye ayiqhagamshelani ngqo ne-wafer.
I-epitaxial susceptor, ebambe i-Si substrate yokukhulisa i-Si epitaxial slice, ibekwe kwigumbi lokuphendula kwaye iqhagamshelane ngqo ne-wafer.
I-Epitaxial barrel yizona zinto zibalulekileyo ezisetyenziswa kwiinkqubo ezahlukeneyo zokuvelisa i-semiconductor, ezisetyenziswa ngokubanzi kwizixhobo ze-MOCVD, ezinozinzo oluhle kakhulu lwe-thermal, ukuxhathisa imichiza kunye nokumelana nokunxiba, kukulungele kakhulu ukusetyenziswa kwiinkqubo zokushisa okuphezulu. Iqhagamshela iiwafa.
| Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ubushushu bokusebenza (°C) | 1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo) |
| Umxholo weSiC | > 99.96% |
| Isiqulatho sasimahla Si | <0.1% |
| Unizi lolwapho kuyiwa khona | 2.60-2.70 g / cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla oxinzelelo | > 600 MPa |
| Amandla okugoba okubandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| Ukwandiswa kweThermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| Imodyuli ye-elastic | 240 GPA |
| Ukuxhathisa ukothuka kwe-Thermal | Ulunge kakhulu |
| Iimpawu ezibonakalayo zeSintered Silicon Carbide | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ukuqulunqwa kwemichiza | SiC>95%, Si<5% |
| Unizi lolwapho kuyiwa khona | >3.07 g/cm³ |
| I-porosity ebonakalayo | <0.1% |
| Imodyuli yokugqabhuka kwi-20℃ | 270 MPa |
| Imodyuli yokugqabhuka kwi-1200℃ | 290 MPa |
| Ukuqina kwi-20℃ | 2400 Kg/mm² |
| Ukuqina kokwaphuka kwi-20% | 3.3 MPa · m1/2 |
| I-Thermal Conductivity kwi-1200℃ | 45 w/m .K |
| Ukwandiswa kweThermal kwi-20-1200 ℃ | 4.5 1 × 10 -6/℃ |
| Ubushushu bokusebenza obuphezulu | 1400℃ |
| Ukumelana nokothuka kwe-Thermal kwi-1200 ℃ | Kulungile |
| Iimpawu ezibonakalayo ezisisiseko zeefilimu ze-CVD SiC | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ulwakhiwo lweCrystal | I-FCC β isigaba se-polycrystalline, ikakhulu (i-111) ejoliswe kuyo |
| Ukuxinana | 3.21 g/cm³ |
| Ubunzima 2500 | (500g umthwalo) |
| Ubungakanani benkozo | 2 ~ 10μm |
| Ucoceko lweMichiza | 99.99995% |
| Ubushushu Umthamo | 640 J·kg-1·K-1 |
| Iqondo lobushushu elisezantsi | 2700℃ |
| Amandla e-Flexural | 415 MPa RT 4-inqaku |
| Imodulus yolutsha | 430 Gpa 4pt bend, 1300℃ |
| I-Thermal Conductivity | 300Wm-1·K-1 |
| Ukwandiswa kweThermal(CTE) | 4.5×10-6 K -1 |
Iimpawu eziphambili
Umphezulu uxinene kwaye awunazo iipores.
Ukucoceka okuphezulu, umxholo wokungcola ngokupheleleyo <20ppm, umoya omhle.
Ukumelana nobushushu obuphezulu, amandla anyuka ngokunyuka kobushushu bokusetyenziswa, ukufikelela kwelona xabiso liphezulu kwi-2750 ℃, i-sublimation kwi-3600 ℃.
Imodyuli ye-elastic esezantsi, ukuhanjiswa okuphezulu kwe-thermal, i-coefficient yokwandisa i-thermal ephantsi, kunye nokuchasana kokuthotywa kwe-thermal.
Ukuzinza kweekhemikhali ezilungileyo, ukumelana ne-asidi, i-alkali, ityuwa, kunye ne-organic reagents, kwaye ayinayo impembelelo kwisinyithi esityhidiweyo, i-slag, kunye nezinye izinto ezidliwayo. Ayifaki i-oxidize kakhulu kwi-atmosfera engaphantsi kwe-400 C, kwaye izinga le-oxidation linyuka kakhulu kwi-800 ℃.
Ngaphandle kokukhupha nayiphi na igesi kumaqondo obushushu aphezulu, inokugcina ivacuum eyi-10-7mmHg malunga ne-1800°C.
Isicelo semveliso
I-crucible enyibilikayo yokunyuka komphunga kwishishini le-semiconductor.
Amandla aphezulu esango letyhubhu ye-elektroniki.
Ibrashi enxibelelana nesilawuli sombane.
Graphite monochromator for X-reyi kunye neutron.
Iimilo ezahlukeneyo ze-graphite substrates kunye ne-atom yokufunxa ityhubhu yokugquma.
Ifuthe le-pyrolytic carbon coating phantsi kwe-500X microscope, kunye nomgangatho oqinileyo kunye notywiniweyo.
Ukwaleka kwe-TaC sisizukulwana esitsha sokumelana nobushushu obuphezulu, enozinzo olungcono lobushushu obuphezulu kuneSiC. Njengengubo enganyangekiyo ku-corrosion, i-anti-oxidation coating kunye ne-resistant-resistant coating, inokusetyenziswa kwindawo engaphezulu kwe-2000C, isetyenziswa kakhulu kwindawo ye-aerospace yobushushu obuphezulu bobushushu obuphezulu, isizukulwana sesithathu semiconductor enye indawo yokukhula yekristale.
| Iimpawu ezibonakalayo zokwaleka kwe-TaC | |
| Ukuxinana | 14.3 (g/cm3) |
| Ukukhupha izinto ezithile | 0.3 |
| I-coefficient yokwandisa i-Thermal | 6.3 10/K |
| Ukuqina (HK) | 2000 HK |
| Ukuchasa | 1x10-5 Ohm * cm |
| Ukuzinza kwe-Thermal | <2500℃ |
| Ubungakanani begraphite utshintsho | -10 ~ -20um |
| Ubunzima bokugquma | ≥220um ixabiso eliqhelekileyo (35um±10um) |
Iinxalenye eziqinileyo zeCVD SILICON CARBIDE zibonwa njengolona khetho luphambili lweRTP/EPI amakhonkco kunye neziseko kunye neplasma etch cavity amalungu asebenza kwinkqubo ephezulu efunekayo ubushushu bokusebenza (> 1500 ° C), iimfuno zococeko ziphezulu kakhulu (> 99.9995%) kwaye ukusebenza kuhle ngakumbi xa iikhemikhali zokumelana netol ziphezulu kakhulu. Ezi zixhobo aziqukethe izigaba zesibini kumda wokudla okuziinkozo, ngoko ke amacandelo e-il avelisa amasuntswana ambalwa kunezinye izinto. Ukongeza, la macandelo anokucocwa usebenzisa i-HF/HCI eshushu ngokuthotywa okuncinci, okubangela amasuntswana ambalwa kunye nobomi benkonzo obude.
