I-Silicon carbide luhlobo olutsha lweekeramics ezinexabiso eliphezulu lokusebenza kunye neempawu ezintle zezinto eziphathekayo. Ngenxa yeempawu ezinje ngokuqina okuphezulu kunye nokuqina, ukumelana nobushushu obuphezulu, ukuguquguquka okukhulu kwe-thermal kunye nokuxhathisa ukubola kweekhemikhali, iSilicon Carbide inokumelana nayo yonke imichiza ephakathi. Ke ngoko, i-SiC isetyenziswa kakhulu kwimigodi yeoli, kwimichiza, koomatshini kunye ne-airspace, nkqu amandla enyukliya kunye nomkhosi banemfuno zabo ezikhethekileyo kwi-SIC. Esinye isicelo esiqhelekileyo esinokusinika amakhonkco okutywina epompo, i-valve kunye nezixhobo zokukhusela njl.
Siyakwazi ukuyila kunye nokwenza ngokwemilinganiselo yakho ethile ngomgangatho olungileyo kunye nexesha lokuhambisa elifanelekileyo.
Iiparamitha zobuGcisa:
Idatha yeMathiriyeli
| 材料Material | R-SiC |
| 使用温度Ubushushu bokusebenza (°C) | 1600°C (ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化气氛Ubume beOxidizing) 1700°C (还原气氛Ukunciphisa okusingqongileyo) |
| SiC含量Umxholo weSiC (%) | > 99 |
| 自由Si含量Umxholo wesi Si samahala (%) | < 0.1 |
| 体积密度Ubuninzi bobuninzi (g/cm3) | 2.60-2.70 |
| 气孔率I-porosity ebonakalayo (%) | <16 |
| 抗压强度Amandla okutyumza (MPa) | > 600 |
| 常温抗弯强度Amandla okugoba abandayo (MPa) | 80-90 (20°C) |
| 高温抗弯强度Amandla okugoba ashushu (MPa) | 90-100 (1400°C) |
| 热膨胀系数 Ukwandiswa komlinganiso wobushushu @1500°C (10-6/°C) | 4.70 |
| 导热系数Thermal conductivity @1200°C (W/m•K) | 23 |
| 杨氏模量Imodyuli yeelastiki (GPa) | 240 |
| 抗热震性Ukuxhathisa ukothuka kwe-Thermal | 很好Ulunge kakhulu |
