Inkcazo
Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo nge-CVD indlela kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulathe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beemolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenza iUmaleko okhuselayo we-SiC.
Iimpawu eziphambili
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
IiNgcaciso eziphambili ze-CVD-SIC Coating
Iipropati zeSiC-CVD | ||
Ulwakhiwo lweCrystal | FCC isigaba β | |
Ukuxinana | g/cm ³ | 3.21 |
Ukuqina | Vickers ubulukhuni | 2500 |
Ubungakanani benkozo | μm | 2~10 |
Ucoceko lweMichiza | % | 99.99995 |
Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
Iqondo lobushushu elisezantsi | ℃ | 2700 |
Amandla eFelexural | MPa (RT 4-point) | 415 |
Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
I-Thermal conductivity | (W/mK) | 300 |


Izixhobo






-
I-Silicon Carbide (SiC) I-Wafer Susceptors ye-MOCVD
-
Semiconductor MOCVD Substrate heater MOCVD Ubushushu...
-
Intloko ye-CVD SiC Shower
-
I-Graphite Susceptors ene-Silicon Carbide Coatin...
-
I-LED etch Silicon carbide ethwele itreyi, itreyi ye-ICP ...
-
Inkqubo eqatywe iSiC yesiseko segraphite SiC Coated...