I-8 lnch n-uhlobo lwe-Conductive SiC Substrate ibonelela ngokusebenza okungenakuthelekiswa nanto kwizixhobo zombane zamandla, ibonelela nge-thermal conductivity egqwesileyo, amandla ombane aphezulu wokuqhekeka kunye nomgangatho ogqwesileyo wezicelo eziphambili ze-semiconductor. I-Semicera ibonelela ngezisombululo eziphambili kwishishini ngobunjineli bayo be-8 lnch n-uhlobo lwe-Conductive SiC Substrate.
I-Semicera's 8 lnch n-type Conductive SiC Substrate yimathiriyeli yokusika eyilelwe ukuhlangabezana neemfuno ezikhulayo zombane wamandla kunye nezicelo eziphezulu ze-semiconductor. I-substrate idibanisa iingenelo ze-silicon carbide kunye ne-n-type conductivity ukuhambisa ukusebenza okungahambelaniyo kwizixhobo ezifuna ukuxinana kwamandla aphezulu, ukusebenza kakuhle kwe-thermal, kunye nokuthembeka.
I-Semicera's 8 lnch n-type Conductive SiC Substrate yenziwe ngononophelo ukuqinisekisa umgangatho ophezulu kunye nokungaguquguquki. Ibonisa i-thermal conductivity egqwesileyo yokuchitha ubushushu obusebenzayo, iyenza ilungele usetyenziso lwamandla aphezulu njengee-inverters zamandla, iidiode, kunye neetransistors. Ukongeza, i-voltage ephezulu yokuphuka kwe-substrate iqinisekisa ukuba inokumelana neemeko ezinzima, ibonelela ngeqonga elomeleleyo le-elektroniki esebenza kakhulu.
I-Semicera iqaphela indima ebalulekileyo edlalwa yi-8 lnch n-type Conductive SiC Substrate ekuphuhliseni iteknoloji ye-semiconductor. Ii-substrates zethu ziveliswa kusetyenziswa iinkqubo zanamhlanje zokuqinisekisa ukuxinana kwesiphako esincinci, esibalulekileyo ekuphuhliseni izixhobo ezisebenzayo. Le ngqalelo kwiinkcukacha yenza ukuba iimveliso ezixhasa ukuveliswa kombane wesizukulwana esilandelayo kunye nokusebenza okuphezulu kunye nokuqina.
I-8 lnch n-uhlobo lwe-Conductive SiC Substrate yethu nayo yenzelwe ukuhlangabezana neemfuno zoluhlu olubanzi lwezicelo ukusuka kwimoto ukuya kumandla ahlaziyekayo. I-n-type conductivity ibonelela ngeempawu zombane ezifunekayo ukuphuhlisa izixhobo zamandla ezisebenzayo, okwenza le substrate ibe yinto ephambili ekutshintsheni kwiiteknoloji ezisebenza ngamandla.
Kwi-Semicera, sizibophelele ekuboneleleni ngee-substrates eziqhuba ukutsha kwimveliso ye-semiconductor. I-8 lnch n-type Conductive SiC Substrate ibubungqina bokuzinikela kwethu kumgangatho kunye nokugqwesa, siqinisekisa ukuba abathengi bethu bafumana eyona mathiriyeli ibalaseleyo kwizicelo zabo.
Iiparamitha ezisisiseko
Ubungakanani | 8-intshi |
Ububanzi | 200.0mm+0mm/-0.2mm |
Ukuqhelaniswa nomphezulu | ngaphandle kwe-axis: 4 ° ukuya <1120>士0.5 ° |
INotch Orientation | <1100>士1° |
I-engile yeNotshi | 90°+5°/-1° |
Ubunzulu beNotshi | 1mm+0.25mm/-0mm |
IFlethi yesibini | / |
Ukutyeba | 500.0士25.0um/350.0±25.0um |
Iipolytype | 4H |
Uhlobo lokuqhuba | n-udidi |