I-8 intshi ye-n-uhlobo lwe-Conductive SiC Substrate

Inkcazelo emfutshane:

I-8-intshi ye-n-type ye-SiC substrate yi-n-type ye-silicon carbide (SiC) enye i-crystal substrate ene-diameter ukusuka kwi-195 ukuya kwi-205 mm kunye nobukhulu obuvela kwi-300 ukuya kwi-650 microns. Le substrate inogxininiso oluphezulu lwe-doping kunye neprofayili yoxinaniso ephuculwe ngononophelo, ibonelela ngokusebenza okugqwesileyo kwiintlobo ngeentlobo zezicelo ze-semiconductor.

 


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-8 lnch n-uhlobo lwe-Conductive SiC Substrate ibonelela ngokusebenza okungenakuthelekiswa nanto kwizixhobo zombane zamandla, ibonelela nge-thermal conductivity egqwesileyo, amandla ombane aphezulu wokuqhekeka kunye nomgangatho ogqwesileyo wezicelo eziphambili ze-semiconductor. I-Semicera ibonelela ngezisombululo eziphambili kwishishini ngobunjineli bayo be-8 lnch n-uhlobo lwe-Conductive SiC Substrate.

I-Semicera's 8 lnch n-type Conductive SiC Substrate yimathiriyeli yokusika eyilelwe ukuhlangabezana neemfuno ezikhulayo zombane wamandla kunye nezicelo eziphezulu ze-semiconductor. I-substrate idibanisa iingenelo ze-silicon carbide kunye ne-n-type conductivity ukuhambisa ukusebenza okungahambelaniyo kwizixhobo ezifuna ukuxinana kwamandla aphezulu, ukusebenza kakuhle kwe-thermal, kunye nokuthembeka.

I-Semicera's 8 lnch n-type Conductive SiC Substrate yenziwe ngononophelo ukuqinisekisa umgangatho ophezulu kunye nokungaguquguquki. Ibonisa i-thermal conductivity egqwesileyo yokuchitha ubushushu obusebenzayo, iyenza ilungele usetyenziso lwamandla aphezulu njengee-inverters zamandla, iidiode, kunye neetransistors. Ukongeza, i-voltage ephezulu yokuphuka kwe-substrate iqinisekisa ukuba inokumelana neemeko ezinzima, ibonelela ngeqonga elomeleleyo le-elektroniki esebenza kakhulu.

I-Semicera iqaphela indima ebalulekileyo edlalwa yi-8 lnch n-type Conductive SiC Substrate ekuphuhliseni iteknoloji ye-semiconductor. Ii-substrates zethu ziveliswa kusetyenziswa iinkqubo zanamhlanje zokuqinisekisa ukuxinana kwesiphako esincinci, esibalulekileyo ekuphuhliseni izixhobo ezisebenzayo. Le ngqalelo kwiinkcukacha yenza ukuba iimveliso ezixhasa ukuveliswa kombane wesizukulwana esilandelayo kunye nokusebenza okuphezulu kunye nokuqina.

I-8 lnch n-uhlobo lwe-Conductive SiC Substrate yethu nayo yenzelwe ukuhlangabezana neemfuno zoluhlu olubanzi lwezicelo ukusuka kwimoto ukuya kumandla ahlaziyekayo. I-n-type conductivity ibonelela ngeempawu zombane ezifunekayo ukuphuhlisa izixhobo zamandla ezisebenzayo, okwenza le substrate ibe yinto ephambili ekutshintsheni kwiiteknoloji ezisebenza ngamandla.

Kwi-Semicera, sizibophelele ekuboneleleni ngee-substrates eziqhuba ukutsha kwimveliso ye-semiconductor. I-8 lnch n-type Conductive SiC Substrate ibubungqina bokuzinikela kwethu kumgangatho kunye nokugqwesa, siqinisekisa ukuba abathengi bethu bafumana eyona mathiriyeli ibalaseleyo kwizicelo zabo.

Iiparamitha ezisisiseko

Ubungakanani 8-intshi
Ububanzi 200.0mm+0mm/-0.2mm
Ukuqhelaniswa nomphezulu ngaphandle kwe-axis: 4 ° ukuya <1120>士0.5 °
INotch Orientation <1100>士1°
I-engile yeNotshi 90°+5°/-1°
Ubunzulu beNotshi 1mm+0.25mm/-0mm
IFlethi yesibini /
Ukutyeba 500.0士25.0um/350.0±25.0um
Iipolytype 4H
Uhlobo lokuqhuba n-udidi
8lnch n-uhlobo sic Substrate-2
Iifafa zeSiC

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