6 Intshi ye-n-uhlobo lwe-sic substrate

6 Intshi n-uhlobo sic substrate Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-6-intshi ye-n-type ye-SiC substrate yinto ye-semiconductor ebonakaliswe ngokusetyenziswa kwe-6-intshi ye-wafer size, eyandisa inani lezixhobo ezinokuveliswa kwi-wafer enye phezu kwendawo enkulu, ngaloo ndlela inciphisa iindleko zenqanaba lesixhobo. . Ukuphuhliswa kunye nokusetyenziswa kwe-6-intshi ye-n-type ye-SiC substrates ixhamle ekuphuculweni kobuchwepheshe obufana nendlela yokukhula ye-RAF, enciphisa ukuchithwa ngokusika iikristale kunye nokuchithwa kunye nemikhombandlela ehambelanayo kunye ne-crystals ekhulayo, ngaloo ndlela iphucula umgangatho we-substrate. Ukusetyenziswa kwale substrate kubaluleke kakhulu ekuphuculeni ukusebenza kakuhle kwemveliso kunye nokunciphisa iindleko zezixhobo zombane zeSiC.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide (SiC) imathiriyeli yekristale enye inobubanzi bebhendi enkulu (~Si 3 amaxesha), i-thermal conductivity ephezulu (~Si 3.3 amaxesha okanye GaAs 10 amaxesha), izinga eliphezulu lokufuduka kwe-electron (~Si 2.5 amaxesha), ukuphuka okuphezulu kombane intsimi (~ Si 10 amaxesha okanye GaAs 5 amaxesha) kunye nezinye iimpawu ezibalaseleyo.

Isizukulwana sesithathu semiconductor izixhobo ikakhulu ziquka SiC, GaN, idayimane, njl., kuba umsantsa band yayo ububanzi (Umzekelo) mkhulu okanye ilingana 2.3 electron volts (eV), eyaziwa ngokuba band gap semiconductor ebanzi imathiriyeli. Xa kuthelekiswa nezixhobo ze-semiconductor zesizukulwana sokuqala kunye nesesibini, izixhobo ze-semiconductor zesizukulwana sesithathu zineengenelo ze-thermal conductivity ephezulu, i-high breakdown ibala lombane, izinga eliphezulu lokufuduka kwe-electron kunye namandla aphezulu okubambisana, anokuthi ahlangabezane neemfuno ezintsha zeteknoloji ye-elektroniki yanamhlanje ephezulu. ubushushu, amandla aphezulu, uxinzelelo oluphezulu, amaza omoya aphezulu kunye nokumelana nemitha kunye nezinye iimeko ezinzima. Inamathemba abalulekileyo okusebenza kwiinkalo zokhuselo lwelizwe, inqwelomoya, i-aerospace, ukuhlola i-oyile, ukugcinwa kwamehlo, njl., kwaye inokunciphisa ukulahlekelwa kwamandla ngaphezu kwe-50% kumashishini amaninzi anobuchule afana nonxibelelwano lwe-broadband, amandla elanga, ukuveliswa kweemoto, ukukhanyisa kwe-semiconductor, kunye negridi ehlakaniphile, kwaye inokunciphisa umthamo wesixhobo ngaphezu kwe-75%, into ebalulekileyo ebalulekileyo kuphuhliso lwenzululwazi yoluntu kunye nobuchwepheshe.

Amandla e-Semicera anokubonelela abathengi ngekhwalithi ephezulu ye-Conductive (i-Conductive), i-Semi-insulating (i-Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ukongeza, sinokubonelela abathengi nge-homogeneous kunye ne-heterogeneous silicon carbide epitaxial sheets; Sinokwenza ngokwezifiso iphepha le-epitaxial ngokweemfuno ezithile zabathengi, kwaye akukho xabiso lincinci lomyalelo.

INGCACISO YEMVELISO EYISISEKO

Ubungakanani	6-intshi
Ububanzi	150.0mm+0mm/-0.2mm
Ukuqhelaniswa nomphezulu	off-axis: 4 ° ukuya <1120> ± 0.5 °
Ubude beFlethi obuPhambili	47.5mm1.5 mm
Ukuqhelaniswa neFlethi okuPhambili	<1120>±1.0°
IFlethi yesibini	Akukho nanye
Ukutyeba	350.0um±25.0um
Iipolytype	4H
Uhlobo lokuqhuba	n-udidi

IINKCUKACHA ZOMGANGATHO WEKHRISTU

6-intshi
Into	IBanga le-P-MOS	IBanga le-P-SBD
Ukuxhathisa	0.015Ω·cm-0.025Ω·cm
Iipolytype	Akukho kuvunyelweyo
Ukuxinana kweMibhobho	≤0.2/cm2	≤0.5/cm2
EPD	≤4000/cm2	≤8000/cm2
TED	≤3000/cm2	≤6000/cm2
I-BPD	≤1000/cm2	≤2000/cm2
TSD	≤300/cm2	≤1000/cm2
SF(Ilinganiswe nguUV-PL-355nm)	≤0.5% indawo	≤1% indawo
Iipleyiti zeHex ngokukhanya okuphezulu	Akukho kuvunyelweyo
I-Visual CarbonInclusions ngokukhanya okuphezulu kokukhanya	Indawo eyongezelekayo≤0.05%