I-Semicera ye-6 Intshi ye-N-uhlobo lwe-SiC Wafer imi phambili kwi-teknoloji ye-semiconductor. Yenzelwe ukusebenza ngokugqibeleleyo, esi siqwengana sigqwesileyo kumandla aphezulu, i-high-frequency, kunye nezicelo zobushushu obuphezulu, ziyimfuneko kwizixhobo zombane eziphambili.
I-6 Intshi yethu ye-N-uhlobo lwe-SiC wafer ibonakalisa ukuhamba kwe-electron ephezulu kunye nokumelana okuphantsi, okuyimilinganiselo ebalulekileyo yezixhobo zamandla ezifana ne-MOSFETs, diode, kunye nezinye izinto. Ezi zakhiwo ziqinisekisa ukuguqulwa kwamandla okusebenzayo kunye nokunciphisa ukuveliswa kobushushu, ukuphucula ukusebenza kunye nokuphila kweenkqubo zombane.
Iinkqubo ezingqongqo zolawulo lomgangatho weSemicera ziqinisekisa ukuba iwafa yeSiC nganye igcina umphezulu othe tyaba ogqwesileyo kunye neziphene ezincinci. Olu qwalaselo lucokisekileyo kwiinkcukacha luqinisekisa ukuba ii-wafers zethu ziyahlangabezana neemfuno ezingqongqo zamashishini afana neenqwelomoya, i-aerospace, kunye nonxibelelwano.
Ukongeza kwiipropathi zayo eziphezulu zombane, i-wafer ye-N-uhlobo lwe-SiC inika uzinzo olomeleleyo lwe-thermal kunye nokuchasana nobushushu obuphezulu, iyenza ilungele indawo apho izinto eziqhelekileyo zinokusilela. Esi sikhundla sibaluleke kakhulu kwizicelo ezibandakanya i-frequency ephezulu kunye nokusebenza kwamandla aphezulu.
Ngokukhetha i-Semicera's 6 Intshi ye-N-uhlobo lweSiC Wafer, utyala imali kwimveliso emele incopho ye-semiconductor innovation. Sizibophelele ekuboneleleni ngeebhloko zokwakha zezixhobo ezibukhali, siqinisekisa ukuba amaqabane ethu kumashishini ahlukeneyo afikelela kwezona zixhobo zibalaseleyo zokuqhubela phambili kwezobuchwepheshe.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
