I-6 Intshi ye-N-uhlobo lwe-SiC Substrate

Inkcazelo emfutshane:

I-Semicera inikezela ngoluhlu olubanzi lwe-4H-8H SiC wafers. Kwiminyaka emininzi, siye saba ngumvelisi kunye nomthengisi weemveliso kwi-semiconductor kunye ne-photovoltaic industries. Iimveliso zethu eziphambili ziquka: iipleyiti ze-silicon carbide etch, ii-silicon carbide boat boat, ii-silicon carbide wafer boats (PV & Semiconductor), iityhubhu ze-silicon carbide furnace, i-silicon carbide cantilever paddles, i-silicon carbide chucks, i-silicon carbide beams, kunye ne-CVD ye-coating kunye ne-SiC coating. Iingubo ze-TaC. Ukugubungela uninzi lweemarike zaseYurophu naseMelika. Sijonge phambili ekubeni liqabane lakho lexesha elide eTshayina.

 

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide (SiC) imathiriyeli yekristale enye inobubanzi bebhendi enkulu (~Si 3 amaxesha), i-thermal conductivity ephezulu (~Si 3.3 amaxesha okanye GaAs 10 amaxesha), izinga eliphezulu lokufuduka kwe-electron (~Si 2.5 amaxesha), ukuphuka okuphezulu kombane intsimi (~ Si 10 amaxesha okanye GaAs 5 amaxesha) kunye nezinye iimpawu ezibalaseleyo.

Isizukulwana sesithathu semiconductor izixhobo ikakhulu ziquka SiC, GaN, idayimane, njl., kuba umsantsa band yayo ububanzi (Umzekelo) mkhulu okanye ilingana 2.3 electron volts (eV), eyaziwa ngokuba band gap semiconductor ebanzi imathiriyeli. Xa kuthelekiswa nezixhobo ze-semiconductor zesizukulwana sokuqala kunye nesesibini, izixhobo ze-semiconductor zesizukulwana sesithathu zineengenelo ze-thermal conductivity ephezulu, i-high breakdown ibala lombane, izinga eliphezulu lokufuduka kwe-electron kunye namandla aphezulu okubambisana, anokuthi ahlangabezane neemfuno ezintsha zeteknoloji ye-elektroniki yanamhlanje ephezulu. ubushushu, amandla aphezulu, uxinzelelo oluphezulu, amaza omoya aphezulu kunye nokumelana nemitha kunye nezinye iimeko ezinzima. Inamathemba abalulekileyo okusebenza kwiinkalo zokhuselo lwelizwe, inqwelomoya, i-aerospace, ukuhlola i-oyile, ukugcinwa kwamehlo, njl., kwaye inokunciphisa ukulahlekelwa kwamandla ngaphezu kwe-50% kumashishini amaninzi anobuchule afana nonxibelelwano lwe-broadband, amandla elanga, ukuveliswa kweemoto, ukukhanyisa kwe-semiconductor, kunye negridi ehlakaniphile, kwaye inokunciphisa umthamo wesixhobo ngaphezu kwe-75%, into ebalulekileyo ebalulekileyo kuphuhliso lwenzululwazi yoluntu kunye nobuchwepheshe.

Amandla e-Semicera anokubonelela abathengi ngekhwalithi ephezulu ye-Conductive (i-Conductive), i-Semi-insulating (i-Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ukongeza, sinokubonelela abathengi nge-homogeneous kunye ne-heterogeneous silicon carbide epitaxial sheets; Sinokwenza ngokwezifiso iphepha le-epitaxial ngokweemfuno ezithile zabathengi, kwaye akukho xabiso lincinci lomyalelo.

Izinto

Imveliso

Uphando

Dummy

Iiparamitha zeCrystal

Iipolytype

4H

Imposiso yokuma kumphezulu

<11-20>4±0.15°

Iiparamitha zoMbane

I-Dopant

n-uhlobo lweNitrojeni

Ukuxhathisa

0.015-0.025ohm · cm

IiParameters zoomatshini

Ububanzi

150.0±0.2mm

Ukutyeba

350±25 μm

Ukuqhelaniswa neflethi ephambili

[1-100] ± 5 °

Ubude beflethi bokuqala

47.5±1.5mm

Iflethi yesibini

Akukho nanye

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Ukuqubuda

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Ngaphambili(Si-face) uburhabaxa(AFM)

Ra≤0.2nm (5μm*5μm)

Ulwakhiwo

Ukuxinana kweMibhobho

<1 iya/cm2

<10 i/cm2

<15 i/cm2

Ukungcola kwesinyithi

≤5E10athom/cm2

NA

I-BPD

≤1500 i-ea/cm2

≤3000 i/cm2

NA

TSD

≤500 i/cm2

≤1000 nge-cm2

NA

Umgangatho wangaphambili

Ngaphambili

Si

Ukugqitywa komphezulu

Si-ubuso CMP

Amacandelo

≤60ea/wafer (ubukhulu≥0.3μm)

NA

Imikrwelo

≤5ea/mm. Ubude obongezelekayo ≤Ububanzi

Ubude obongezelekayo≤2*Ububanzi

NA

Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko

Akukho nanye

NA

Iitshiphusi ze-Edge/i-idents/fracture/hex plates

Akukho nanye

Iindawo zePolytype

Akukho nanye

Indawo eyongezelekayo≤20%

Indawo eyongezelekayo≤30%

Ukumakishwa kwelaser yangaphambili

Akukho nanye

Umgangatho wasemva

Emva kokugqiba

C-ubuso CMP

Imikrwelo

≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi

NA

Iziphene zangasemva (iitshiphusi zomphetho/iindents)

Akukho nanye

Umqolo uburhabaxa

Ra≤0.2nm (5μm*5μm)

Ukumakishwa kwelaser yangasemva

1 mm (ukusuka kumphetho ophezulu)

Edge

Edge

Chamfer

Ukupakishwa

Ukupakishwa

I-Epi ilungele ukupakishwa kwevacuum

Ukupakishwa kweekhasethi ezininzi

*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD.

ubuchwephesha_1_2_ubungakanani
Iifafa zeSiC

Semicera Indawo yokusebenzela Indawo yokusebenza yeSemicera 2 Umatshini wezixhobo Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD Inkonzo yethu


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