I-6-intshi ye-LiNbO3 yokudibanisa i-wafer

Inkcazelo emfutshane:

I-Semicera ye-6-intshi ye-LiNbO3 i-wafer eboshiweyo ilungele iinkqubo zokubambisana eziphambili kwizixhobo ze-optoelectronic, i-MEMS, kunye neesekethe ezidibeneyo (ICs). Ngeempawu zayo eziphezulu zokubopha, kulungele ukufezekisa ulungelelwaniso oluchanekileyo kunye nokudibanisa, ukuqinisekisa ukusebenza kunye nokusebenza kakuhle kwezixhobo ze-semiconductor. Ukucoceka okuphezulu kwe-wafer kunciphisa ukungcoliseka, okwenza kube yinto ethembekileyo yokhetho lwezicelo ezifuna ukuchaneka okuphezulu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera's 6-intshi ye-LiNbO3 Bonding Wafer yenzelwe ukuhlangabezana nemigangatho engqongqo yeshishini le-semiconductor, inikezela ukusebenza okungenakulinganiswa kuzo zombini iindawo zophando kunye nemveliso. Nokuba yeyomgangatho ophezulu we-optoelectronics, i-MEMS, okanye ukupakishwa kwe-semiconductor ephezulu, le wafer yokudibanisa ibonelela ngokuthembeka kunye nokuqina okuyimfuneko kuphuhliso lwetekhnoloji yokusika.

Kwishishini le-semiconductor, i-6-intshi ye-LiNbO3 ye-Bonding Wafer isetyenziselwa ngokubanzi ukudibanisa iileyile ezincinci kwizixhobo ze-optoelectronic, i-sensors, kunye ne-microelectromechanical systems (MEMS). Iimpawu zayo ezikhethekileyo zenza ukuba ibe yinto exabisekileyo kwizicelo ezifuna ukudityaniswa komgangatho ochanekileyo, njengokwenziwa kweesekethe ezidibeneyo (ICs) kunye nezixhobo zefotonic. Ukucoceka okuphezulu kwe-wafer kuqinisekisa ukuba imveliso yokugqibela igcina ukusebenza kakuhle, ukunciphisa umngcipheko wongcoliseko onokuchaphazela ukuthembeka kwesixhobo.

Iipropati ze-Thermal kunye nombane ze-LiNbO3
Indawo yokunyibilika 1250 ℃
Ubushushu beCurie 1140 ℃
I-Thermal conductivity 38 W/m/K @ 25 ℃
I-Coefficient yokwandiswa kwe-thermal (@ 25°C)

//a, 2.0×10-6/K

//c, 2.2×10-6/K

Ukuxhathisa 2×10-6Ω·cm @ 200 ℃
I-Dielectric rhoqo

εS11/ε0=43, εT11/ε0=78

εS33/ε0=28, εT33/ε0= 2

I-piezoelectric rhoqo

D22=2.04×10-11C/N

D33=19.22×10-11C/N

I-Electro-optic coefficient

γT33=32 pm/V, γS33= 31pm/V,

γT31=10 pm/V, γS31= 8.6 pm/V,

γT22=6.8 pm/V, γS22= 3.4 pm/V,

Isiqingatha sombane wamaza, DC
Indawo yombane // z, ukukhanya ⊥ Z;
Indawo yombane // x okanye y, ukukhanya ⊥ z

3.03 KV

4.02 KV

I-6-intshi ye-LiNbO3 ye-Bonding Wafer evela kwi-Semicera yenzelwe ngokukodwa usetyenziso oluphezulu kwi-semiconductor kunye ne-optoelectronics industries. Eyaziwayo ngokuxhathisa ukunxiba okuphezulu, ukuzinza okuphezulu kwe-thermal, kunye nokucoceka okukhethekileyo, le wafer ye-bonding ifanelekile kwi-high-performance semiconductor production, inikezela ukuthembeka okuhlala ixesha elide kunye nokuchaneka nakwiimeko ezinzima.

Eyenziwe ngeteknoloji yokusika, i-6-intshi ye-LiNbO3 Bonding Wafer iqinisekisa ukungcoliseka okuncinci, okubalulekileyo kwiinkqubo zokuvelisa i-semiconductor ezifuna amanqanaba aphezulu okucoceka. Ukuzinza kwayo okuhle kakhulu kwe-thermal kuvumela ukuba imelane namaqondo okushisa aphakamileyo ngaphandle kokuphazamisa ingqibelelo yesakhiwo, okwenza kube yinto ethembekileyo yokukhetha izicelo zokubopha ubushushu obuphezulu. Ukongeza, ukuxhathisa okugqwesileyo kwe-wafer kuqinisekisa ukuba isebenza ngokungaguqukiyo kusetyenziso olwandisiweyo, ibonelela ngokuqina kwexesha elide kunye nokunciphisa imfuno yokutshintshwa rhoqo.

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