I-6-intshi ye-LiNbO3 yokudibanisa i-wafer

I-6-intshi ye-LiNbO3 yoBonding wafer oMfanekiso obonakalayo

Inkcazelo emfutshane:

I-Semicera ye-6-intshi ye-LiNbO3 i-wafer eboshiweyo ifanelekile kwiinkqubo zokubambisana eziphambili kwizixhobo ze-optoelectronic, i-MEMS, kunye neesekethe ezidibeneyo (ICs). Ngeempawu zayo eziphezulu zokubopha, kulungele ukufezekisa ulungelelwaniso oluchanekileyo kunye nokudibanisa, ukuqinisekisa ukusebenza kunye nokusebenza kakuhle kwezixhobo ze-semiconductor. Ukucoceka okuphezulu kwe-wafer kunciphisa ukungcoliseka, okwenza kube yinto ethembekileyo yokhetho lwezicelo ezifuna ukuchaneka okuphezulu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera's 6-intshi ye-LiNbO3 Bonding Wafer yenzelwe ukuhlangabezana nemigangatho engqongqo yoshishino lwe-semiconductor, ukuhambisa ukusebenza okungenakulinganiswa kuzo zombini iindawo zophando kunye nemveliso. Nokuba yeyomgangatho ophezulu we-optoelectronics, i-MEMS, okanye ukupakishwa kwe-semiconductor ephezulu, le wafer yokudibanisa ibonelela ngokuthembeka kunye nokuqina okuyimfuneko kuphuhliso lwetekhnoloji yokusika.

Kwishishini le-semiconductor, i-6-intshi ye-LiNbO3 ye-Bonding Wafer isetyenziselwa ngokubanzi ukudibanisa iileyile ezincinci kwizixhobo ze-optoelectronic, i-sensors, kunye ne-microelectromechanical systems (MEMS). Iimpawu zayo ezikhethekileyo zenza ukuba ibe yinto exabisekileyo kwizicelo ezifuna ukudityaniswa komgangatho ochanekileyo, njengokwenziwa kweesekethe ezidibeneyo (ICs) kunye nezixhobo zefotonic. Ukucoceka okuphezulu kwe-wafer kuqinisekisa ukuba imveliso yokugqibela igcina ukusebenza kakuhle, ukunciphisa umngcipheko wongcoliseko onokuchaphazela ukuthembeka kwesixhobo.

Iipropati ze-Thermal kunye nombane ze-LiNbO3
Indawo yokunyibilika	1250 ℃
Ubushushu beCurie	1140 ℃
I-Thermal conductivity	38 W/m/K @ 25 ℃
I-Coefficient yokwandiswa kwe-thermal (@ 25°C)	//a, 2.0×10^-6/K //c, 2.2×10^-6/K
Ukuxhathisa	2×10^-6Ω·cm @ 200 ℃
I-Dielectric rhoqo	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
Piezoelectric rhoqo	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
I-Electro-optic coefficient	γT₃₃=32 pm/V, γS₃₃= 31pm/V, γT₃₁=10 pm/V, γS₃₁= 8.6 pm/V, γT₂₂=6.8 pm/V, γS₂₂= 3.4 pm/V,
Isiqingatha sombane wamaza, DC Indawo yombane // z, ukukhanya ⊥ Z; Indawo yombane // x okanye y, ukukhanya ⊥ z	3.03 KV 4.02 KV

I-6-intshi ye-LiNbO3 ye-Bonding Wafer evela kwi-Semicera yenzelwe ngokukodwa usetyenziso oluphezulu kwi-semiconductor kunye ne-optoelectronics industries. Eyaziwayo ngokuxhathisa ukunxiba okuphezulu, ukuzinza okuphezulu kwe-thermal, kunye nokucoceka okukhethekileyo, le wafer ye-bonding ifanelekile kwi-high-performance semiconductor production, inikezela ukuthembeka okuhlala ixesha elide kunye nokuchaneka nakwiimeko ezinzima.

Eyenziwe ngeteknoloji yokusika, i-6-intshi ye-LiNbO3 Bonding Wafer iqinisekisa ukungcoliseka okuncinci, okubalulekileyo kwiinkqubo zokuvelisa i-semiconductor ezifuna amanqanaba aphezulu okucoceka. Ukuzinza kwayo okuhle kakhulu kwe-thermal kuvumela ukuba imelane namaqondo okushisa aphakamileyo ngaphandle kokuphazamisa ingqibelelo yesakhiwo, okwenza kube yinto ethembekileyo yokukhetha izicelo zokubopha ubushushu obuphezulu. Ukongeza, ukuxhathisa okugqwesileyo kwe-wafer kuqinisekisa ukuba isebenza ngokungaguqukiyo kusetyenziso olwandisiweyo, ibonelela ngokuqina kwexesha elide kunye nokunciphisa imfuno yokutshintshwa rhoqo.