1.MalungaI-Silicon Carbide (SiC) i-Epitaxial Wafers
I-Silicon Carbide (i-SiC) i-epitaxial wafers yenziwa ngokufaka i-crystal layer kwi-wafer usebenzisa i-silicon carbide i-crystal wafer enye njenge-substrate, ngokuqhelekileyo nge-chemical vapor deposition (CVD). Phakathi kwazo, i-silicon carbide epitaxial ilungiswa ngokukhula kwe-silicon carbide epitaxial layer kwi-conductive silicon carbide substrate, kwaye yenziwe ngakumbi kwizixhobo zokusebenza eziphezulu.
2.ISilicon Carbide Epitaxial WaferIinkcukacha
Sinokubonelela nge-4, 6, 8 intshi ze-N-uhlobo lwe-4H-SiC epitaxial wafers. I-wafer ye-epitaxial ine-bandwidth enkulu, isantya esiphezulu se-electron drift, isantya esiphezulu segesi ye-electron ene-dimensional-dimensional, kunye namandla aphezulu e-electron. Ezi zakhiwo zenza isixhobo sixhathise ubushushu obuphezulu, ukumelana nombane ophezulu, isantya sokutshintsha ngokukhawuleza, ukuxhathisa okuphantsi, ubungakanani obuncinci kunye nobunzima obulula.
3. Ii-SiC Epitaxial Applications
SiC epitaxial waferisetyenziswa ikakhulu kwi Schottky diode (SBD), metal oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), esetyenziswayo. kwiindawo ezinevoltage ephantsi, i-medium-voltage kunye ne-high-voltage. Ngoku,I-SiC epitaxial wafersusetyenziso lwevoltage ephezulu zikwinqanaba lophando kunye nophuhliso kwihlabathi liphela.
