4 Intshi yeSiC Substrate N-uhlobo

Inkcazelo emfutshane:

I-Semicera inikezela ngoluhlu olubanzi lwe-4H-8H SiC wafers. Kwiminyaka emininzi, siye saba ngumvelisi kunye nomthengisi weemveliso kwi-semiconductor kunye ne-photovoltaic industries. Iimveliso zethu eziphambili ziquka: iipleyiti ze-silicon carbide etch, ii-silicon carbide boat boat, ii-silicon carbide wafer boats (PV & Semiconductor), iityhubhu ze-silicon carbide furnace, i-silicon carbide cantilever paddles, i-silicon carbide chucks, i-silicon carbide beams, kunye ne-CVD ye-coating kunye ne-SiC coating. Iingubo ze-TaC. Ukugubungela uninzi lweemarike zaseYurophu naseMelika. Sijonge phambili ekubeni liqabane lakho lexesha elide eTshayina.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide (SiC) imathiriyeli yekristale enye inobubanzi bebhendi enkulu (~Si 3 amaxesha), i-thermal conductivity ephezulu (~Si 3.3 amaxesha okanye GaAs 10 amaxesha), izinga eliphezulu lokufuduka kwe-electron (~Si 2.5 amaxesha), ukuphuka okuphezulu kombane intsimi (~ Si 10 amaxesha okanye GaAs 5 amaxesha) kunye nezinye iimpawu ezibalaseleyo.

Amandla e-Semicera anokubonelela abathengi ngekhwalithi ephezulu ye-Conductive (i-Conductive), i-Semi-insulating (i-Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ukongeza, sinokubonelela abathengi nge-homogeneous kunye ne-heterogeneous silicon carbide epitaxial sheets; Sinokwenza ngokwezifiso iphepha le-epitaxial ngokweemfuno ezithile zabathengi, kwaye akukho xabiso lincinci lomyalelo.

Izinto	Imveliso	Uphando	Dummy
Iiparamitha zeCrystal
Iipolytype	4H
Imposiso yokuma kumphezulu	<11-20>4±0.15°
Iiparamitha zoMbane
I-Dopant	n-uhlobo lweNitrojeni
Ukuxhathisa	0.015-0.025ohm · cm
Iiparamitha zoomatshini
Ububanzi	99.5 - 100mm
Ukutyeba	350±25 μm
Ukuqhelaniswa neflethi ephambili	[1-100] ± 5 °
Ubude beflethi bokuqala	32.5±1.5mm
Indawo ethe tyaba yesibini	90° CW ukusuka kwiflethi yokuqala ±5°. ubuso besilicon phezulu
Ubude beflethi yesibini	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Ukuqubuda	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
I-Wap	≤20 μm	≤45 μm	≤50 μm
Ngaphambili(Si-face) uburhabaxa(AFM)	Ra≤0.2nm (5μm*5μm)
Ulwakhiwo
Ukuxinana kweMibhobho	≤1 nge-cm2	≤5 i/cm2	≤10 i/cm2
Ukungcola kwesinyithi	≤5E10athom/cm2		NA
I-BPD	≤1500 i-ea/cm2	≤3000 nge-cm2	NA
TSD	≤500 i/cm2	≤1000 nge-cm2	NA
Umgangatho wangaphambili
Ngaphambili	Si
Ukugqitywa komphezulu	Si-ubuso CMP
Amacandelo	≤60ea/wafer (ubukhulu≥0.3μm)	NA
Imikrwelo	≤2ea/mm. Ubude obongezelekayo ≤Ububanzi	Ubude obongezelekayo≤2*Ububanzi	NA
Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko	Akukho nanye		NA
Iitshiphusi ze-Edge/i-idents/fracture/hex plates	Akukho nanye		NA
Iindawo zePolytype	Akukho nanye	Indawo eyongezelekayo≤20%	Indawo eyongezelekayo≤30%
Ukumakishwa kwelaser yangaphambili	Akukho nanye
Umgangatho wasemva
Emva kokugqiba	C-ubuso CMP
Imikrwelo	≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi	NA
Iziphene zangasemva (iitshiphusi zomphetho/iindindi)	Akukho nanye
Umqolo uburhabaxa	Ra≤0.2nm (5μm*5μm)
Ukumakishwa kwelaser yangasemva	1 mm (ukusuka kumphetho ophezulu)
Edge
Edge	Chamfer
Ukupakishwa
Ukupakishwa	Ibhegi yangaphakathi izaliswe yinitrogen kwaye ibhegi yangaphandle iyatshintshwa. Multi-wafer cassette, epi-ready.
*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD.