I-Semicera's I-Intshi ezi-4 eziPhakamileyo zokuPhuculwa kweSemi-Insulating (HPSI) SiC ezinamacala amabini aGqwethiweyo eWafer Substrates ziyilelwe ukuhlangabezana neemfuno ezithe ngqo kushishino lwesemiconductor. Ezi substrates ziyilwe ngendlela ethe tyaba kunye nobunyulu obukhethekileyo, ebonelela ngeqonga elilelona lifanelekileyo lezixhobo zombane eziphuma phambili.
Ezi ziqwenga ze-HPSI SiC zihlukaniswa ngokugqithiswa kwazo okuphezulu kwe-thermal kunye neempawu zokugquma umbane, zizenza zibe lolona khetho lubalaseleyo kwi-high-frequency kunye ne-high-power applications. Inkqubo yokupolisha yamacala amabini iqinisekisa uburhabaxa obuncinci bomphezulu, obubalulekileyo ekuphuculeni ukusebenza kwesixhobo kunye nobomi obude.
Ukucoceka okuphezulu kwee-wafers ze-SiC ze-Semicera kunciphisa iziphene kunye nokungcola, okukhokelela kumazinga aphezulu esivuno kunye nokuthembeka kwesixhobo. Ezi substrates zifanelekile kuluhlu olubanzi lwezicelo, kubandakanywa izixhobo ze-microwave, i-electronics yamandla, kunye nobuchwepheshe be-LED, apho ukuchaneka kunye nokuqina kubalulekile.
Ngokujolisa kubuchule obutsha kunye nomgangatho, iSemicera isebenzisa iindlela eziphucukileyo zokuvelisa ukuvelisa iiwafa ezihlangabezana neemfuno ezingqongqo zombane wale mihla. I-polish enamacala amabini ayiphuculi kuphela amandla omatshini kodwa iququzelela ukuhlanganiswa okungcono kunye nezinye izinto ze-semiconductor.
Ngokukhetha iSemicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, abavelisi banokusebenzisa izibonelelo zolawulo oluphuculweyo lwe-thermal kunye nokufakwa kombane, bevula indlela yophuhliso lwezixhobo zombane ezisebenza ngakumbi nezinamandla. I-Semicera iyaqhubeka nokukhokela ishishini ngokuzibophezela kumgangatho kunye nokuqhubela phambili kwezobuchwepheshe.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| Iiparamitha zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 nge-cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
