ISemicera's 4" 6" Semi-Insulating SiC Substrate sisixhobo somgangatho ophezulu esiyilelwe ukuhlangabezana neemfuno ezingqongqo zeRF kunye nokusetyenziswa kwesixhobo sombane. I-substrate idibanisa i-conductivity ye-thermal egqwesileyo kunye ne-voltage ephezulu yokuphuka kwe-silicon carbide kunye neepropati ze-semi-insulating, iyenza ibe lolona khetho lufanelekileyo lokuphuhlisa izixhobo ze-semiconductor eziphambili.
I-4" 6" I-Semi-Insulating SiC Substrate yenziwe ngononophelo ukuqinisekisa imathiriyeli yokucoceka okuphezulu kunye nokusebenza okungaguqukiyo kwe-semi-insulating. Oku kuqinisekisa ukuba i-substrate ibonelela ngombane oyimfuneko wokuhlukaniswa kombane kwizixhobo ze-RF ezifana ne-amplifiers kunye nee-transistors, ngelixa zibonelela ngokusebenza kakuhle kwe-thermal efunekayo kwizicelo zamandla aphezulu. Isiphumo siyinxalenye eguquguqukayo enokusetyenziswa kuluhlu olubanzi lweemveliso ze-elektroniki ezisebenza kakhulu.
I-Semicera iyakuqonda ukubaluleka kokubonelela ngee-substrates ezithembekileyo, ezingenasiphako kwizicelo ezibalulekileyo ze-semiconductor. I-4" 6" yethu ye-Semi-Insulating SiC Substrate iveliswa kusetyenziswa iindlela eziphucukileyo zokuvelisa ezinciphisa iziphene zekristale kunye nokuphucula ukufana kwezinto. Oku kwenza ukuba imveliso ixhase ukwenziwa kwezixhobo ngokusebenza okuphuculweyo, uzinzo, kunye nobomi.
Ukuzibophelela kweSemicera kumgangatho kuqinisekisa ukuba i-4" 6" yethu ye-Semi-Insulating SiC Substrate inikezela ukusebenza okuthembekileyo nokungaguquguqukiyo kuluhlu olubanzi lwezicelo. Nokuba uphuhlisa izixhobo ze-frequency ephezulu okanye izisombululo zamandla awonga amandla, i-semi-insulating ye-SiC substrates ibonelela ngesiseko sempumelelo yesizukulwana esilandelayo sombane.
Iiparamitha ezisisiseko
| Ubungakanani | 6-intshi | 4-intshi |
| Ububanzi | 150.0mm+0mm/-0.2mm | 100.0mm+0mm/-0.5mm |
| Ukuqhelaniswa nomphezulu | {0001} ±0.2° | |
| Ukuqhelaniswa neFlethi okuPhambili | / | <1120>±5° |
| Ukuqhelaniswa neFlat yesibini | / | Isilicon ubuso phezulu: 90 ° CW ukusuka Prime flat 士5 ° |
| Ubude beFlethi obuPhambili | / | 32.5 mm 士2.0 mm |
| Ubude beFlethi yesibini | / | 18.0 mm士2.0 mm |
| INotch Orientation | <1100>±1.0° | / |
| INotch Orientation | 1.0mm+0.25 mm/-0.00 mm | / |
| I-engile yeNotshi | 90°+5°/-1° | / |
| Ukutyeba | 500.0um士25.0um | |
| Uhlobo lokuqhuba | Semi-insulating | |
Ulwazi olusemgangathweni lweCrystal
| ltm | 6-intshi | 4-intshi |
| Ukuxhathisa | ≥1E9Q·cm | |
| Iipolytype | Akukho kuvunyelweyo | |
| Ukuxinana kweMibhobho | ≤0.5/cm2 | ≤0.3/cm2 |
| Iipleyiti zeHex ngokukhanya okuphezulu | Akukho kuvunyelweyo | |
| I-Visual Carbon Inclusions ngokuphezulu | Indawo eyongezelekayo≤0.05% | |
Resistivity-Ivavanywe ngoKungaqhagamshelwanga ngochaso lwephepha.
Ukuxinana kweMibhobho
