I-3C-SiC Wafer Substrate

I-Semicera 3C-SiC Wafer Substrates zenzelwe ukubonelela ngeqonga elomeleleyo lesizukulwana esilandelayo sombane wamandla kunye nezixhobo eziphezulu ze-frequency. Ngeempawu eziphezulu ze-thermal kunye neempawu zombane, ezi substrates zenzelwe ukuhlangabezana neemfuno ezifunekayo zobuchwepheshe bale mihla.

I-3C-SiC (i-Cubic Silicon Carbide) isakhiwo se-Semicera Wafer Substrates inikezela ngeenzuzo ezizodwa, kubandakanywa ukuhanjiswa kwe-thermal ephezulu kunye ne-coefficient yokwandisa i-thermal ephantsi xa kuthelekiswa nezinye izinto ze-semiconductor. Oku kubenza babe lolona khetho lubalaseleyo kwizixhobo ezisebenza phantsi kobushushu obugqithisileyo kunye neemeko zamandla aphezulu.

Ngombane ophezulu wokuphuka kombane kunye nokuzinza okuphezulu kweekhemikhali, i-Semicera 3C-SiC Wafer Substrates iqinisekisa ukusebenza okuhlala ixesha elide kunye nokuthembeka. Ezi zakhiwo zibaluleke kakhulu kwizicelo ezifana ne-radar ephezulu-frequency, ukukhanya kwe-slid-state, kunye nee-inverters zamandla, apho ukusebenza kakuhle kunye nokuqina kubaluleke kakhulu.

Ukuzibophelela kweSemicera kumgangatho kubonakaliswa kwinkqubo yokwenziwa ngobunono kwe-3C-SiC Wafer Substrates yabo, iqinisekisa ukufana kunye nokungaguquguquki kwibhetshi nganye. Oku kuchanekileyo kunegalelo ekusebenzeni ngokubanzi kunye nobomi obude bezixhobo zombane ezakhelwe phezu kwazo.

Ngokukhetha i-Semicera 3C-SiC Wafer Substrates, abavelisi bafumana ukufikelela kwizinto ezinqamlekileyo ezivumela ukuphuhliswa kwezinto ezincinci, ngokukhawuleza, kunye nokusebenza kakuhle kwe-elektroniki. I-Semicera iyaqhubeka nokuxhasa ukutsha kwezobuchwepheshe ngokubonelela ngezisombululo ezithembekileyo ezihlangabezana neemfuno eziguqukayo zeshishini le-semiconductor.