I-Semicera 3C-SiC Wafer Substrates zenzelwe ukubonelela ngeqonga elomeleleyo lesizukulwana esilandelayo sombane wamandla kunye nezixhobo ezisebenza rhoqo. Ngeempawu eziphezulu ze-thermal kunye neempawu zombane, ezi substrates zenzelwe ukuhlangabezana neemfuno ezifunekayo zobuchwepheshe bale mihla.
I-3C-SiC (i-Cubic Silicon Carbide) isakhiwo se-Semicera Wafer Substrates inikezela ngeenzuzo ezizodwa, kubandakanywa ukuhanjiswa kwe-thermal ephezulu kunye ne-coefficient yokwandisa i-thermal ephantsi xa kuthelekiswa nezinye izinto ze-semiconductor. Oku kubenza babe lolona khetho lubalaseleyo kwizixhobo ezisebenza phantsi kobushushu obugqithisileyo kunye neemeko zamandla aphezulu.
Ngombane ophezulu wokuphuka kombane kunye nokuzinza okuphezulu kweekhemikhali, i-Semicera 3C-SiC Wafer Substrates iqinisekisa ukusebenza okuhlala ixesha elide kunye nokuthembeka. Ezi zakhiwo zibaluleke kakhulu kwizicelo ezifana ne-radar ephezulu-frequency, ukukhanya kwe-slid-state, kunye nee-inverters zamandla, apho ukusebenza kakuhle kunye nokuqina kubaluleke kakhulu.
Ukuzibophelela kweSemicera kumgangatho kubonakaliswa kwinkqubo yokwenziwa ngobunono kwe-3C-SiC Wafer Substrates yabo, iqinisekisa ukufana kunye nokungaguquguquki kwibhetshi nganye. Oku kuchanekileyo kunegalelo ekusebenzeni ngokubanzi kunye nobomi obude bezixhobo zombane ezakhelwe phezu kwazo.
Ngokukhetha i-Semicera 3C-SiC Wafer Substrates, abavelisi bafumana ukufikelela kwizinto ezinqamlekileyo ezivumela ukuphuhliswa kwezinto ezincinci, ngokukhawuleza, kunye nokusebenza kakuhle kwe-elektroniki. I-Semicera iyaqhubeka nokuxhasa ukutsha kwezobuchwepheshe ngokubonelela ngezisombululo ezithembekileyo ezihlangabezana neemfuno eziguqukayo zeshishini le-semiconductor.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokujonga umphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
