ISilicon nitride edityaniswe nesilicon carbide isikwere beam

Inkcazelo emfutshane:

I-Si3N4 eboshiweyo ye-SiC njengohlobo olutsha lwezinto eziphikisayo, zisetyenziswa ngokubanzi.Ubushushu obufakayo yi-1400 C.Inozinzo olungcono lwe-thermal, ukutshatyalaliswa kwe-thermal, okungcono kune-plain refractory material.Inayo ne-anti-I-oxidation, ukumelana nokukhula okuphezulu, ukuxhathisa, ukugoba okuphezulu.


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描述

I-silicon nitride ebotshelelwe kwi-silicon carbide

I-Si3N4 edibeneyo ye-SiC ye-ceramic refractory material, ixutywe kunye ne-SIC ephezulu ecocekileyo yomgubo kunye ne-Silicon powder, emva kwekhosi ye-slip casting, i-reaction sintered phantsi kwe-1400 ~ 1500 ° C.Ngexesha le-sintering, ukugcwalisa i-Nitrogen ecocekileyo ephezulu kwiziko, emva koko i-silicon iya kusabela nge-Nitrogen kwaye ivelise i-Si3N4, ngoko ke i-Si3N4 i-Si3N4 eboshiweyo yezinto ze-SiC yenziwe nge-silicon nitride (23%) kunye ne-silicon carbide (75%) njengeyona nto iphambili ekrwada. , ixutywe nezinto eziphilayo, kwaye ibunjwe ngumxube, i-extrusion okanye ukugalela, emva koko yenziwe emva kokumiswa kunye ne-nitrogenization.

 

特点

Iimpawu kunye neenzuzo:

1.Hukunyamezela ubushushu
I-2.I-conductivity ephezulu ye-thermal kunye nokuxhatshazwa kokutshatyalaliswa
I-3.Amandla aphezulu omatshini kunye nokuxhatshazwa kwe-abrasion
I-4.Ukusebenza kakuhle kwamandla kunye nokumelana nokubola

Sibonelela ngomgangatho ophezulu kunye nokuchaneka komatshini we-NSiC amacandelo e-ceramic aqhuba

1.I-Slip casting
2.Ukukhupha
3.Uni Axial Pressing
4.Isostatic Pressing

I-datasheet yezinto eziphathekayo

>Ukwakheka kweeKhemikhali Sic 75%
Si3N4 ≥23%
Mahala Si 0%
Ubuninzi bobuninzi (g/cm3) 2.702.80
I-porosity ebonakalayo (%) 1215
Goba amandla kuma-20 ℃(MPa) 180190
Goba amandla kwi-1200 ℃(MPa) 207
Goba amandla kwi-1350 ℃(MPa) 210
Amandla acinezelayo kuma-20 ℃(MPa) 580
I-Thermal conductivity kwi-1200 ℃(w/mk) 19.6
I-coefficient yokwandiswa kweThermal kwi-1200 ℃(x 10-6/C) 4.70
Ukuxhathisa ukothuka kwe-Thermal Egqwesileyo
Max.ubushushu (℃) 1600
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