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Ucoceko oluphezulu lwesilicon carbide yokusila yangaphakathi yomphanda ubunzima obuncinci

Ucoceko oluphezulu lwesilicon carbide yokusila yangaphakathi emgqonyeni ubunzima obuncinci bomfanekiso obonakalayo
  • Ucoceko oluphezulu lwesilicon carbide yokusila yangaphakathi yomphanda ubunzima obuncinci

Inkcazelo emfutshane:

Umphanda wokusila we-silicon carbide unamandla amakhulu, ukuqina okuphezulu, ukuxhathisa okuqinileyo kwe-corrosion, ukunxiba kakhulu, ukumelana nobushushu obuphezulu kunye nokunye ukusebenza okugqwesileyo, unobomi obude benkonzo kwiimeko ezinzima.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Ukusetyenziswa kweSilicon Carbide igubu lokusila i-ceramic kwinto yokufudumeza
I-silicon carbide i-ceramic grinding barrel iye yaba yinto ekrwada yezinto ze-cathode ze-lithium ibhetri ngenxa yepropathi yayo ebalulekileyo.I-SiC yokufudumeza into ebalulekileyo yimveliso ebalulekileyo ye-SiC kwaye inethemba elibanzi lemarike.

I-silicon carbide yokugaya ngaphakathi kwi-barrel

I-silicon carbide yokugaya ngaphakathi kwi-barrel2

I-silicon ye-carbide yokugaya i-barrel inzuzo

(1) Amandla aphezulu oomatshini, njengoko kunjalo
Amandla aphezulu omatshini anokuthintela ngokufanelekileyo ukuguqulwa kwezinto eziphathekayo, okubaluleke kakhulu.I-Silicon carbide inamandla omatshini aphezulu kune-corundum.Umzekelo, amandla acinezelayo e-silicon carbide yi-224MPa, ngelixa i-corundum yi-75.7MPa kuphela.Amandla okugoba e-silicon carbide yi-15.5MPa, kwaye eye-corundum yi-8.72MPa.

(2) Ukumelana nokushisa okuphezulu, i-coefficient encinci yokwandiswa kwe-thermal
I-silicon carbide yenziwa kumaqondo aphezulu.Kwezinye iimeko zokushisa okuphezulu, izinto ezifunekayo ukuba zibe namandla athile okusebenza, kwaye zihlangabezane nokuchaneka kokucubungula, kunye ne-silicon carbide ceramics inokufezekisa la manqaku mabini.Elona qondo liphezulu lokusetyenziswa kwesilicon carbide limalunga ne-800℃, kwaye iqondo lobushushu lentsimbi lingama-250℃ kuphela.Ngokubala ngokurhabaxa, umndilili wokwandiswa kwe-thermal coefficient ye-SIC yi-4.4×10-6/ C kuluhlu lwe-25 ~ 1400℃.I-coefficient yokwandisa i-thermal ye-SIC incinci kakhulu kunezinye iibrasives kunye nezixhobo zokushisa eziphezulu.Ngokomzekelo, i-coefficient yokwandiswa kwe-thermal ye-corundum ingaba phezulu njenge (7 ~ 8) × 10-6 / ℃.

(3) Ukumelana nokubola
I-silicon carbide ngenxa yendawo yokunyibilika (iqondo lobushushu lokubola), inertia yekhemikhali kunye nokuxhathisa ukothuka kwe-thermal kuphezulu, ingasetyenziselwa iintlobo ngeentlobo zeemveliso ze-silicon carbide zeceramic, njengemveliso ye-ceramic yesithando sokugaya izixhobo, ipleyiti yesilingi kunye ne-sagger, i-zinc yokunyibilikisa kwimizi-mveliso ethe nkqo. i-cylinder distillation furnace enezitena ze-silicon carbide, i-aluminium ye-electrolytic cell linening, i-crucible, imathiriyeli encinci yeziko.

I-silicon carbide yokugaya igubu-3
I-silicon carbide yokugaya igubu2

Isicelo sokumelana nokubola

I-1, iindawo zokutyibilika (itywina lomatshini, ukuthwala impompo yeekhemikhali, ishaft)
2, izixhobo zokutyumza (umdidiyeli, ilitye lokusila lomoya, ilitye lokusila)
3.Izixhobo zokuvelisa izixhobo zeSemiconductor (iqonga le-XY, i-tray ye-MOCVD, i-ringinging ring, i-wafer chuck)
4. Amacandelo omatshini wokubumba (iinxalenye zomatshini wokubumba ikhamera yekhamera)
5. Iindawo ezikwaziyo ukumelana nobushushu (i-burner burner, iinxalenye zomatshini wokuvavanya ubushushu obuphezulu, i-crucible metal crucible)
.

Ifoto (1)

Ifoto (2)

Ezothutho

ukupakisha

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