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Isikhephe esiqhelekileyo se-semiconductor yesilicon carbide

Isikhephe sesemiconductor yesilicon carbide isikhephe Umfanekiso obonakalayo
  • Isikhephe esiqhelekileyo se-semiconductor yesilicon carbide

Inkcazelo emfutshane:

I-WeiTai Energy Technology Co., Ltd. ngumboneleli ohamba phambili okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor,imboni ye-photovoltaickunye neminye imimandla enxulumeneyo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye njl.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizibophelele ekuziseni iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide luhlobo olutsha lweekeramics ezinexabiso eliphezulu lokusebenza kunye neempawu ezintle zezinto eziphathekayo.Ngenxa yeempawu ezinje ngokuqina okuphezulu kunye nokuqina, ukumelana nobushushu obuphezulu, ukuguquguquka okukhulu kwe-thermal kunye nokuxhathisa ukubola kweekhemikhali, iSilicon Carbide inokumelana nayo yonke imichiza ephakathi.Ke ngoko, i-SiC isetyenziswa kakhulu kwimigodi yeoli, kwimichiza, koomatshini nakwindawo yomoya, nkqu amandla enyukliya kunye nomkhosi banemfuno zabo ezikhethekileyo kwi-SIC.Esinye isicelo esiqhelekileyo esinokusinika amakhonkco okutywina epompo, i-valve kunye nezixhobo zokukhusela njl.

Siyakwazi ukuyila kunye nokwenza ngokwemilinganiselo yakho ethile ngomgangatho olungileyo kunye nexesha lokuhambisa elifanelekileyo.

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Aizinto eziluncedo:

Ukumelana ne-oxidation yobushushu obuphezulu

Uxhathiso olugqwesileyo lweCorrosion

Ukuxhathisa okulungileyo kweAbrasion

I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

Usetyenziso:

-Indawo ekwaziyo ukumelana nokunxiba: ibhulorho, ipleyiti, umbhobho wesanti, umgca wenkanyamba, umphanda wokusila, njl.

-Umgangatho wobushushu obuphezulu: i-siC Slab, iTube yokuCima iFurnace, iTube eRadiant, i-crucible, i-Heating Element, i-Roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikhephe se-SiC, i-Kiln car Structure, i-Setter, njl.

-Ibala leBulletproof yoMkhosi

-I-Silicon Carbide Semiconductor: Isikhephe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion ityhubhu, i-wafer fork, ipleyiti yokufunxa, isikhokelo, njl.

-I-Silicon Carbide Seal Field: zonke iintlobo zeringi yokutywina, ukuthwala, i-bushing, njl.

-I-Photovoltaic Field: I-Cantilever Paddle, i-Barrel yokugaya, i-Silicon Carbide Roller, njl.

-Indawo yebhetri yeLithium

微信图片_20230719092847

Iiparamitha zobuGcisa:

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I-datasheet yezinto eziphathekayo

材料Izinto eziphathekayo

R-SiC

使用温度Ubushushu bokusebenza (°C)

1600°C (ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化气氛Ubume beOxidizing)

1700°C (还原气氛Ukunciphisa okusingqongileyo)

SiC含量Umxholo weSiC (%)

> 99

自由Si含量Umxholo wesi Si samahala (%)

< 0.1

体积密度Ubuninzi bobuninzi (g/cm3)

2.60-2.70

气孔率I-porosity ebonakalayo (%)

<16

抗压强度Amandla okutyumza (MPa)

> 600

常温抗弯强度Amandla okugoba abandayo (MPa)

80-90 (20°C)

高温抗弯强度Amandla okugoba ashushu (MPa)

90-100 (1400°C)

热膨胀系数

Ukwandiswa komlinganiso wobushushu @1500°C (10-6/°C)

4.70

导热系数Thermal conductivity @1200°C (W/m•K)

23

杨氏模量Imodyuli yeelastiki (GPa)

240

抗热震性Ukuxhathisa ukothuka kwe-Thermal

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