GaAs Wafers|GaAs Epi Wafers| IGallium Arsenide Substrates

GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrates Featured Image

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu. Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor, imboni ye-photovoltaic kunye nezinye iindawo ezinxulumene nazo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Okwangoku, sikuphela komvelisi obonelela ngobunyulu be-99.9999% ye-SiC yokwambathisa kunye ne-99.9% ye-silicon carbide ehlaziyiweyo. Ubude obuphezulu bokugquma kweSiC sinokwenza i-2640mm.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ii-substrates ze-GaAs zohlulwe zibe zi-conductive kunye ne-semi-insulating, ezisetyenziswa ngokubanzi kwi-laser (LD), i-semiconductor light-emitting diode (i-LED), i-laser ekufutshane ne-infrared, i-quantum kakuhle i-laser ephezulu kunye neepaneli zelanga eziphezulu. I-HEMT kunye ne-HBT chips ze-radar, i-microwave, i-millimeter wave okanye i-ultra-high speed computers kunye nonxibelelwano lwe-optical; Izixhobo zerediyo zonxibelelwano olungenazingcingo, i-4G, i-5G, unxibelelwano ngesathelayithi, i-WLAN.

Kutshanje, i-gallium arsenide substrates nayo yenze inkqubela phambili enkulu kwi-mini-LED, iMicro-LED, kunye ne-LED ebomvu, kwaye isetyenziswa kakhulu kwizixhobo ezinxitywayo ze-AR/VR.

Ububanzi 晶片直径	50mm \| 75mm \| 100mm \| 150mm
Indlela Yokukhula 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Ukutyeba kweWafer 厚度	350 um ~ 625 um
Ukuqhelaniswa 晶向	<100> / <111> / <110> okanye abanye
Uhlobo lokuqhuba 导电类型	P – uhlobo / N – uhlobo / Semi-insulating
Uhlobo/Dopant 掺杂剂	Zn / Si / iguqulwe
Ugxininiso lweCarrier 载流子浓度	1E17 ~ 5E19 cm-3
Ukuxhathisa kwi-RT 室温电阻率(ohm•cm)	≥1E7 ye-SI
Ukushukuma 迁移率(cm2/V•Sec)	≥4000
EPD ( Etch Pit Density ) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Isaphetha / Warp 翘曲度	≤ 20 um
Umphezulu Gqiba 表面	DSP/SSP
Laser uphawu 激光码
IBanga 等级	Inqanaba le-Epi elikhazimlisiweyo / ibakala lomatshini